Authors:
BELL LD
SMITH RP
MCDERMOTT BT
GERTNER ER
PITTMAN R
PIERSON RL
SULLIVAN GJ
Citation: Ld. Bell et al., METAL GAN SCHOTTKY BARRIERS CHARACTERIZED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2286-2290
Authors:
SULLIVAN GJ
HIGGINS JA
CHEN MY
YANG JW
CHEN Q
PIERSON RL
MCDERMOTT BT
Citation: Gj. Sullivan et al., HIGH-POWER RF OPERATION OF ALGAN GAN HEMTS GROWN ON INSULATING SILICON-CARBIDE SUBSTRATES/, Electronics Letters, 34(9), 1998, pp. 922-924
Authors:
BELL LD
SMITH RP
MCDERMOTT BT
GERTNER ER
PITTMAN R
PIERSON RL
SULLIVAN GJ
Citation: Ld. Bell et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY OF METAL GAN INTERFACES/, Applied physics letters, 72(13), 1998, pp. 1590-1592
Authors:
MCDERMOTT BT
GERTNER ER
PITTMAN S
SEABURY CW
CHANG MF
Citation: Bt. Mcdermott et al., GROWTH AND DOPING OF GAASSB VIA METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR INP HETEROJUNCTION BIPOLAR-TRANSISTORS, Applied physics letters, 68(10), 1996, pp. 1386-1388
Authors:
MCDERMOTT BT
SEABURY CW
FARLEY CW
HIGGINS JA
Citation: Bt. Mcdermott et al., HIGHLY DOPED GALNAS USING DIETHYLBERYLLIUM BY MOCVD FOR INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTOR APPLICATIONS, Journal of electronic materials, 22(5), 1993, pp. 555-558
Authors:
SEABURY CW
FARLEY CW
MCDERMOTT BT
HIGGINS JA
LIN CL
KIRCHNER PJ
WOODALL JM
GEE RC
Citation: Cw. Seabury et al., BASE RECOMBINATION IN HIGH-PERFORMANCE INGAAS INP HBTS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2123-2124