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Results: 1-11 |
Results: 11
THERMAL DONOR FORMATION AND ANNIHILATION AT TEMPERATURES ABOVE 500-DEGREES-C IN CZOCHRALSKI-GROWN SI
Authors: GOTZ W PENSL G ZULEHNER W NEWMAN RC MCQUAID SA
Citation: W. Gotz et al., THERMAL DONOR FORMATION AND ANNIHILATION AT TEMPERATURES ABOVE 500-DEGREES-C IN CZOCHRALSKI-GROWN SI, Journal of applied physics, 84(7), 1998, pp. 3561-3568
INTERACTIONS OF HYDROGEN MOLECULES WITH BOND-CENTERED INTERSTITIAL OXYGEN AND ANOTHER DEFECT CENTER IN SILICON
Authors: PRITCHARD RE ASHWIN MJ TUCKER JH NEWMAN RC LIGHTOWLERS EC BINNS MJ MCQUAID SA FALSTER R
Citation: Re. Pritchard et al., INTERACTIONS OF HYDROGEN MOLECULES WITH BOND-CENTERED INTERSTITIAL OXYGEN AND ANOTHER DEFECT CENTER IN SILICON, Physical review. B, Condensed matter, 56(20), 1997, pp. 13118-13125
PASSIVATION, STRUCTURAL MODIFICATION, AND ETCHING OF AMORPHOUS-SILICON IN HYDROGEN PLASMAS
Authors: MCQUAID SA HOLGADO S GARRIDO J MARTINEZ J PIQUERAS J NEWMAN RC TUCKER JH
Citation: Sa. Mcquaid et al., PASSIVATION, STRUCTURAL MODIFICATION, AND ETCHING OF AMORPHOUS-SILICON IN HYDROGEN PLASMAS, Journal of applied physics, 81(11), 1997, pp. 7612-7618
NOVEL ASPECTS OF OXYGEN DIFFUSION IN SILICON
Authors: BINNS MJ LONDOS CA MCQUAID SA NEWMAN RC SEMALTIANOS NG TUCKER JH
Citation: Mj. Binns et al., NOVEL ASPECTS OF OXYGEN DIFFUSION IN SILICON, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 347-353
THE ROLE OF RAPIDLY DIFFUSING DIMERS IN OXYGEN LOSS AND THE ASSOCIATION OF THERMAL DONORS WITH SMALL OXYGEN CLUSTERS
Authors: MCQUAID SA NEWMAN RC MUNOZ E
Citation: Sa. Mcquaid et al., THE ROLE OF RAPIDLY DIFFUSING DIMERS IN OXYGEN LOSS AND THE ASSOCIATION OF THERMAL DONORS WITH SMALL OXYGEN CLUSTERS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 171-174
NATIVE DEFECTS IN LOW-TEMPERATURE GAAS AND THE EFFECT OF HYDROGENATION
Authors: PRITCHARD RE MCQUAID SA HART L NEWMAN RC MAKINEN J VONBARDELEBEN HJ MISSOUS M
Citation: Re. Pritchard et al., NATIVE DEFECTS IN LOW-TEMPERATURE GAAS AND THE EFFECT OF HYDROGENATION, Journal of applied physics, 78(4), 1995, pp. 2411-2422
OXYGEN LOSS DURING THERMAL DONOR FORMATION IN CZOCHRALSKI SILICON - NEW INSIGHTS INTO OXYGEN DIFFUSION MECHANISMS
Authors: MCQUAID SA BINNS MJ LONDOS CA TUCKER JH BROWN AR NEWMAN RC
Citation: Sa. Mcquaid et al., OXYGEN LOSS DURING THERMAL DONOR FORMATION IN CZOCHRALSKI SILICON - NEW INSIGHTS INTO OXYGEN DIFFUSION MECHANISMS, Journal of applied physics, 77(4), 1995, pp. 1427-1442
HYDROGEN-RELATED SHALLOW THERMAL DONORS IN CZOCHRALSKI SILICON
Authors: MCQUAID SA NEWMAN RC LIGHTOWLERS EC
Citation: Sa. Mcquaid et al., HYDROGEN-RELATED SHALLOW THERMAL DONORS IN CZOCHRALSKI SILICON, Semiconductor science and technology, 9(9), 1994, pp. 1736-1739
GALLIUM VACANCY RELATED DEFECTS IN SILICON DOPED GAAS GROWN AT LOW-TEMPERATURES
Authors: MCQUAID SA PRITCHARD RE NEWMAN RC OHAGAN S MISSOUS M
Citation: Sa. Mcquaid et al., GALLIUM VACANCY RELATED DEFECTS IN SILICON DOPED GAAS GROWN AT LOW-TEMPERATURES, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 23-26
HYDROGEN SOLUBILITY IN SILICON AND HYDROGEN DEFECTS PRESENT AFTER QUENCHING
Authors: BINNS MJ MCQUAID SA NEWMAN RC LIGHTOWLERS EC
Citation: Mj. Binns et al., HYDROGEN SOLUBILITY IN SILICON AND HYDROGEN DEFECTS PRESENT AFTER QUENCHING, Semiconductor science and technology, 8(10), 1993, pp. 1908-1911
HEAVILY SI OR BE DOPED MBE GAAS GROWN AT LOW-TEMPERATURES
Authors: MCQUAID SA NEWMAN RC MISSOUS M OHAGAN S
Citation: Sa. Mcquaid et al., HEAVILY SI OR BE DOPED MBE GAAS GROWN AT LOW-TEMPERATURES, Journal of crystal growth, 127(1-4), 1993, pp. 515-518
Risultati: 1-11 |