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Results: 1-9 |
Results: 9
40GBIT S TRANSIMPEDANCE AMPLIFIER IN SIGE BIPOLAR TECHNOLOGY FOR THE RECEIVER IN OPTICAL-FIBER TDM LINKS/
Authors: MULLRICH J MEISTER TF REST M BOGNER W SCHOPFLIN A REIN HM
Citation: J. Mullrich et al., 40GBIT S TRANSIMPEDANCE AMPLIFIER IN SIGE BIPOLAR TECHNOLOGY FOR THE RECEIVER IN OPTICAL-FIBER TDM LINKS/, Electronics Letters, 34(5), 1998, pp. 452-453
SIGE RETIMING HIGH-GAIN POWER MUX FOR DIRECTLY DRIVING AN EAM UP TO 50 GBIT S/
Authors: MOLLER M MEISTER TF SCHMID R RUPETER J REST M SCHOPFLIN A REIN HM
Citation: M. Moller et al., SIGE RETIMING HIGH-GAIN POWER MUX FOR DIRECTLY DRIVING AN EAM UP TO 50 GBIT S/, Electronics Letters, 34(18), 1998, pp. 1782-1784
40GBIT S EAM DRIVER IC IN SIGE BIPOLAR TECHNOLOGY/
Authors: SCHMID R MEISTER TF REST M REIN HM
Citation: R. Schmid et al., 40GBIT S EAM DRIVER IC IN SIGE BIPOLAR TECHNOLOGY/, Electronics Letters, 34(11), 1998, pp. 1095-1097
60GBIT S TIME-DIVISION MULTIPLEXER IN SIGE-BIPOLAR TECHNOLOGY WITH SPECIAL REGARD TO MOUNTING AND MEASURING TECHNIQUE/
Authors: MOLLER M REIN HM FELDER A MEISTER TF
Citation: M. Moller et al., 60GBIT S TIME-DIVISION MULTIPLEXER IN SIGE-BIPOLAR TECHNOLOGY WITH SPECIAL REGARD TO MOUNTING AND MEASURING TECHNIQUE/, Electronics Letters, 33(8), 1997, pp. 679-680
60 GBIT S REGENERATING DEMULTIPLEXER IN SIGE BIPOLAR TECHNOLOGY/
Authors: FELDER A MOLLER M WURZER M REST M MEISTER TF REIN HM
Citation: A. Felder et al., 60 GBIT S REGENERATING DEMULTIPLEXER IN SIGE BIPOLAR TECHNOLOGY/, Electronics Letters, 33(23), 1997, pp. 1984-1986
20 GBIT S TRANSIMPEDANCE PREAMPLIFIER AND MODULATOR DRIVER IN SIGE BIPOLAR TECHNOLOGY/
Authors: SCHMID R MEISTER TF NEUHAUSER M FELDER A BOGNER W REST M RUPETER J REIN HM
Citation: R. Schmid et al., 20 GBIT S TRANSIMPEDANCE PREAMPLIFIER AND MODULATOR DRIVER IN SIGE BIPOLAR TECHNOLOGY/, Electronics Letters, 33(13), 1997, pp. 1136-1137
NOISE CHARACTERISTICS OF TRANSISTORS FABRICATED IN AN ADVANCED SILICON BIPOLAR TECHNOLOGY
Authors: AUFINGER K BOCK J MEISTER TF POPP J
Citation: K. Aufinger et al., NOISE CHARACTERISTICS OF TRANSISTORS FABRICATED IN AN ADVANCED SILICON BIPOLAR TECHNOLOGY, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1533-1538
25 GBIT S DECISION CIRCUIT, 34 GBIT/S MULTIPLEXER, AND 40 GBIT/S DEMULTIPLEXER IC IN SELECTIVE EPITAXIAL SI BIPOLAR TECHNOLOGY/
Authors: FELDER A STENGL R HAUENSCHILD J REIN HM MEISTER TF
Citation: A. Felder et al., 25 GBIT S DECISION CIRCUIT, 34 GBIT/S MULTIPLEXER, AND 40 GBIT/S DEMULTIPLEXER IC IN SELECTIVE EPITAXIAL SI BIPOLAR TECHNOLOGY/, Electronics Letters, 29(6), 1993, pp. 525-527
STATIC FREQUENCY-DIVIDERS FOR HIGH OPERATING SPEED (25 GHZ, 170MW) AND LOW-POWER CONSUMPTION (16 GHZ, 8MW) IN SELECTIVE EPITAXIAL SI BIPOLAR TECHNOLOGY
Authors: FELDER A STENGL R HAUENSCHILD J REIN HM MEISTER TF
Citation: A. Felder et al., STATIC FREQUENCY-DIVIDERS FOR HIGH OPERATING SPEED (25 GHZ, 170MW) AND LOW-POWER CONSUMPTION (16 GHZ, 8MW) IN SELECTIVE EPITAXIAL SI BIPOLAR TECHNOLOGY, Electronics Letters, 29(12), 1993, pp. 1072-1074
Risultati: 1-9 |