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Results: 1-6 |
Results: 6

Authors: MAWST LJ BHATTACHARYA A NESNIDAL M LOPEZ J BOTEZ D SYRBU AV YAKOVLEV VP SURUCEANU GI MEREUTZA AZ JANSEN M NABIEV RF
Citation: Lj. Mawst et al., MOVPE-GROWN HIGH CW POWER INGAAS INGAASP/INGAP DIODE-LASERS/, Journal of crystal growth, 170(1-4), 1997, pp. 383-389

Authors: SYRBU AV MEREUTZA AZ SURUCEANU GI YAKOVLEV VP CALIMAN A LUPU AT VIERU S PREDESCU M POPESCU IM ISPASOIU RG
Citation: Av. Syrbu et al., FABRICATION, CHARACTERIZATION, AND APPLICATIONS OF HIGH-PERFORMANCE ALGAAS-BASED BURIED-HETEROSTRUCTURE DIODE-LASERS, Optical engineering, 35(5), 1996, pp. 1278-1283

Authors: SMEU E ISPASOIU RG SURUCEANU GI MEREUTZA AZ
Citation: E. Smeu et al., COMPACT-SIZE ELECTRONIC DEVICE FOR DIODE-LASER CHARACTERISTIC CURVE TRACING, Optical engineering, 35(5), 1996, pp. 1353-1355

Authors: SYRBU AV YAKOVLEV VP SURUCEANU GI MEREUTZA AZ MAWST LJ BHATTACHARYA A NESNIDAL M LOPEZ J BOTEZ D
Citation: Av. Syrbu et al., ZNSE-FACET-PASSIVATED INGAAS INGAASP/INGAP DIODE-LASERS OF HIGH CW POWER AND WALLPLUG EFFICIENCY/, Electronics Letters, 32(4), 1996, pp. 352-354

Authors: SYRBU AV MEREUTZA AZ YAKOVLEV VP SURUCEANU GI LUPU AT
Citation: Av. Syrbu et al., BURIED HETEROSTRUCTURE ALGAAS PHOTONIC DEVICES FABRICATED BY LOW-TEMPERATURE MESA MELT ETCHING AND REGROWTH, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 302-304

Authors: CHAND N CHU SNG DUTTA NK LOPATA J GEVA M SYRBU AV MEREUTZA AZ YAKOVLEV VP
Citation: N. Chand et al., GROWTH AND FABRICATION OF HIGH-PERFORMANCE 980-NM STRAINED INGAAS QUANTUM-WELL LASERS FOR ERBIUM-DOPED FIBER AMPLIFIERS, IEEE journal of quantum electronics, 30(2), 1994, pp. 424-440
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