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Results: 1-11 |
Results: 11
BLUESHIFTING OF INGAASP INP LASER-DIODES BY LOW-ENERGY ION-IMPLANTATION/
Authors: PAQUETTE M BEAUVAIS J BEERENS J POOLE PJ CHARBONNEAU S MINER CJ BLAAUW C
Citation: M. Paquette et al., BLUESHIFTING OF INGAASP INP LASER-DIODES BY LOW-ENERGY ION-IMPLANTATION/, Applied physics letters, 71(26), 1997, pp. 3749-3751
SPIN-RESONANCE IN IN0.53GA0.47AS UNDER HYDROSTATIC-PRESSURE
Authors: CHARLEBOIS S BEERENS J MINER CJ PUETZ N
Citation: S. Charlebois et al., SPIN-RESONANCE IN IN0.53GA0.47AS UNDER HYDROSTATIC-PRESSURE, Physical review. B, Condensed matter, 54(19), 1996, pp. 13456-13459
DEVICE-QUALITY ALGAAS GROWN BY CHEMICAL BEAM EPITAXY
Authors: MOORE WT MANDEVILLE P STREATER RW MINER CJ
Citation: Wt. Moore et al., DEVICE-QUALITY ALGAAS GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 164(1-4), 1996, pp. 485-490
ELECTRICAL ISOLATION OF PIN PHOTODIODE DEVICES BY OXYGEN-ION BOMBARDMENT
Authors: AKANO UG MITCHELL IV SHEPHERD FR MINER CJ MARGITTAI A SVILANS M
Citation: Ug. Akano et al., ELECTRICAL ISOLATION OF PIN PHOTODIODE DEVICES BY OXYGEN-ION BOMBARDMENT, Canadian journal of physics, 74, 1996, pp. 59-63
HIGH-RELIABILITY BLUE-SHIFTED INGAASP INP LASERS/
Authors: NOEL JP MELVILLE D JONES T SHEPHERD FR MINER CJ PUETZ N FOX K POOLE PJ FENG Y KOTELES ES CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Jp. Noel et al., HIGH-RELIABILITY BLUE-SHIFTED INGAASP INP LASERS/, Applied physics letters, 69(23), 1996, pp. 3516-3518
DEEP CENTERS IN INXGA1-XAS INP PHOTODIODES FABRICATED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: TORCHINSKAYA TV KUSHNIRENKO VI SHCHERBINA BV MINER CJ
Citation: Tv. Torchinskaya et al., DEEP CENTERS IN INXGA1-XAS INP PHOTODIODES FABRICATED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Semiconductors, 29(7), 1995, pp. 692-694
ELECTRON-SPIN-RESONANCE IN IN0.53GA0.47AS
Authors: BEERENS J MINER CJ PUETZ N
Citation: J. Beerens et al., ELECTRON-SPIN-RESONANCE IN IN0.53GA0.47AS, Semiconductor science and technology, 10(9), 1995, pp. 1233-1236
ION-IMPLANTATION DAMAGE OF INP AND INGAAS
Authors: AKANO UG MITCHELL IV SHEPHERD FR MINER CJ
Citation: Ug. Akano et al., ION-IMPLANTATION DAMAGE OF INP AND INGAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 308-312
THE EFFECT OF EMITTER LAYER VARIATIONS ON THE CURRENT GAIN OF ALGAAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY
Authors: MOORE WT SPRINGTHORPE AJ LESTER TP EICHER S SURRIDGE RK HU J MINER CJ
Citation: Wt. Moore et al., THE EFFECT OF EMITTER LAYER VARIATIONS ON THE CURRENT GAIN OF ALGAAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 136(1-4), 1994, pp. 230-234
OPTIMIZATION OF SELECTIVE-AREA EPITAXY FOR FABRICATION OF CIRCULAR GRATING DISTRIBUTED-BRAGG-REFLECTOR SURFACE-EMITTING LASERS
Authors: KNIGHT DG MINER CJ WATT B WU CM FOX K EMMERSTORFER B MARITAN C HENNESSY J
Citation: Dg. Knight et al., OPTIMIZATION OF SELECTIVE-AREA EPITAXY FOR FABRICATION OF CIRCULAR GRATING DISTRIBUTED-BRAGG-REFLECTOR SURFACE-EMITTING LASERS, Journal of crystal growth, 134(1-2), 1993, pp. 19-28
THE EFFECT OF IMPLANT TEMPERATURE AND BEAM FLUX ON DAMAGE ACCUMULATION AND SI ACTIVATION OF SI-IMPLANTED INP
Authors: AKANO UG MITCHELL IV SHEPHERD FR MINER CJ
Citation: Ug. Akano et al., THE EFFECT OF IMPLANT TEMPERATURE AND BEAM FLUX ON DAMAGE ACCUMULATION AND SI ACTIVATION OF SI-IMPLANTED INP, Canadian journal of physics, 70(10-11), 1992, pp. 789-794
Risultati: 1-11 |