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Results:
1-17
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Results: 17
Authors:
ZIMMERMANN G
OUGAZZADEN A
GLOUKHIAN A
RAO EVK
DELPRAT D
RAMDANE A
MIRCEA A
Citation: G. Zimmermann et al., THE ROLE OF N-2 AND H-2 AS CARRIER GAS ON THE SELECTIVE-AREA MOVPE OFINP-BASED HETEROSTRUCTURES USING TBAS AND TBP AS GROUP-V SOURCES, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 37-40
Authors:
PONCHET A
ROCHER A
OUGAZZADEN A
MIRCEA A
Citation: A. Ponchet et al., INASP GAINP STRAINED MULTILAYERS GROWN BY MOVPE ON (001)INP, (113)B AND (110)INP SUBSTRATES - THE ROLE OF THE SURFACE CHARACTERISTICS/, Microelectronics, 28(8-10), 1997, pp. 857-863
Authors:
ZIMMERMANN G
OUGAZZADEN A
GLOUKHIAN A
RAO EVK
DELPRAT D
RAMDANE A
MIRCEA A
Citation: G. Zimmermann et al., SELECTIVE-AREA MOVPE GROWTH OF INP, INGAAS AND INGAASP USING TBAS ANDTBP AT DIFFERENT GROWTH-CONDITIONS, Journal of crystal growth, 170(1-4), 1997, pp. 645-649
Authors:
PAUTET C
ABRAHAM P
DAZORD J
FAVRE R
CAUWET F
MONTEIL Y
BOUIX J
OUGAZZADEN A
RAO EVK
MIRCEA A
Citation: C. Pautet et al., TRIMETHYLARSENIC AS AN ALTERNATIVE TO ARSINE IN THE METALORGANIC VAPOR-PHASE EPITAXY OF DEVICE-QUALITY IN0.53GA0.47AS INP/, Applied physics letters, 69(2), 1996, pp. 209-211
Authors:
DEVAUX F
CHELLES S
OUGAZZADEN A
MIRCEA A
HARMAND JC
Citation: F. Devaux et al., ELECTROABSORPTION MODULATORS FOR HIGH-BIT-RATE OPTICAL COMMUNICATIONS- COMPARISON OF STRAINED INGAAS INALAS AND INGAASP/INGAASP/, Semiconductor science and technology, 10(7), 1995, pp. 887-901
Authors:
BARRAU J
ISSANCHOU O
BROUSSEAU M
MIRCEA A
OUGAZZADEN A
Citation: J. Barrau et al., OPTICAL GAIN EVALUATION IN GAINASP QUANTUM-WELL LASERS - A COMPARISONOF THE DIFFERENT GROWTH TECHNIQUES, Journal of applied physics, 77(2), 1995, pp. 821-826
Authors:
OUGAZZADEN A
SIGOGNE D
MIRCEA A
RAO EVK
RAMDANE A
SILVESTRE L
Citation: A. Ougazzaden et al., ATMOSPHERIC-PRESSURE MOVPE GROWTH OF HIGH-PERFORMANCE POLARIZATION-INSENSITIVE STRAIN COMPENSATED MQW INGAASP INGAAS OPTICAL AMPLIFIER/, Electronics Letters, 31(15), 1995, pp. 1242-1244
Authors:
OUGAZZADEN A
MIRCEA A
KAZMIERSKI C
Citation: A. Ougazzaden et al., HIGH-TEMPERATURE CHARACTERISTIC T-O AND LOW-THRESHOLD CURRENT-DENSITYOF 1.3 MU-M INASP INGAP/INP COMPENSATED STRAIN MULTIQUANTUM-WELL STRUCTURE LASERS/, Electronics Letters, 31(10), 1995, pp. 803-805
Authors:
DEVAUX F
CHELLES S
OUGAZZADEN A
MIRCEA A
CARRE M
HUET F
CARENCO A
SOREL Y
KERDILES JF
HENRY M
Citation: F. Devaux et al., FULL POLARIZATION INSENSITIVITY OF A 20 GB S STRAINED-MQW ELECTROABSORPTION MODULATOR/, IEEE photonics technology letters, 6(10), 1994, pp. 1203-1206
Authors:
DEVAUX F
CHELLES S
OUGAZZADEN A
MIRCEA A
CARRE M
HUET F
CARENCO A
SOREL Y
KERDILES JF
HENRY M
Citation: F. Devaux et al., FULL POLARIZATION INSENSITIVITY OF A 20 GB S STRAINED-MQW ELECTROABSORPTION MODULATOR/, IEEE photonics technology letters, 6(10), 1994, pp. 1203-1206
Authors:
MIRCEA A
OUGAZZADEN A
BOUADMA N
DEVAUX F
MARZIN JY
RAMDANE A
BARRAU J
PONCHET A
Citation: A. Mircea et al., STRAINED MULTIQUANTUM-WELL HETEROSTRUCTURES FOR LASERS, MODULATORS AND INTEGRATED OPTICAL-DEVICES AT 1.3-1.55MU-M, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 279-284
Authors:
MATHOORASING D
KAZMIERSKI C
BLEZ M
OUGAZZADEN A
MIRCEA A
Citation: D. Mathoorasing et al., MIXING PROPERTIES OF A 20-GHZ-BANDWIDTH 1.5-MU-M MQW DFB LASER IN KU AND KA BANDS, Microwave and optical technology letters, 7(2), 1994, pp. 57-60
Authors:
PONCHET A
ROCHER A
OUGAZZADEN A
MIRCEA A
Citation: A. Ponchet et al., SELF-INDUCED LATERALLY MODULATED GAINP INASP STRUCTURE GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY/, Journal of applied physics, 75(12), 1994, pp. 7881-7883
Authors:
OUGAZZADEN A
MIRCEA A
KAZMIERSKI C
LEPRINCE L
Citation: A. Ougazzaden et al., HIGH-PERFORMANCE STRAINED MQW LASERS AT 1.3-MU-M BY MOVPE USING ARSINE GENERATOR SYSTEM, Electronics Letters, 30(20), 1994, pp. 1681-1682
Authors:
DEVAUX F
MULLER S
OUGAZZADEN A
MIRCEA A
RAMDANE A
KRAUZ P
SEMO J
HUET F
CARRE M
CARENCO A
Citation: F. Devaux et al., ZERO-LOSS MULTIPLE-QUANTUM-WELL ELECTROABSORPTION MODULATOR WITH VERY-LOW CHIRP, Applied physics letters, 64(8), 1994, pp. 954-956
Authors:
KAZMIERSKI C
OUGAZZADEN A
ROBEIN D
MATHOORASING D
BLEZ M
MIRCEA A
Citation: C. Kazmierski et al., 20 GHZ BANDWIDTH 1.5-MU-M WAVELENGTH VUG DFB LASER USING A ZERO NET STRAIN INXGA1-XASYP1-Y WELL ACTIVE STRUCTURE GROWN AT CONSTANT-Y, Electronics Letters, 29(14), 1993, pp. 1290-1291
Authors:
DEVAUX F
CHELLES S
OUGAZZADEN A
MIRCEA A
HUET F
CARRE M
Citation: F. Devaux et al., 10 GBIT S OPERATION OF POLARIZATION-INSENSITIVE, STRAINED INGAASP INGAASP MQW ELECTROABSORPTION MODULATOR/, Electronics Letters, 29(13), 1993, pp. 1201-1203
Risultati:
1-17
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