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Results: 1-25 | 26-45
Results: 1-25/45
PROPOSED EXPLANATION OF THE ANOMALOUS DOPING CHARACTERISTICS OF III-VNITRIDES
Authors: MOHAMMAD SN BOTCHKAREV AE SALVADOR A KIM W AKTAS O MORKOC H
Citation: Sn. Mohammad et al., PROPOSED EXPLANATION OF THE ANOMALOUS DOPING CHARACTERISTICS OF III-VNITRIDES, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(2), 1997, pp. 131-143
SURFACE-ROUGHNESS OF NITRIDED (0001)AL2O3 AND ALN EPILAYERS GROWN ON (0001)AL2O3 BY REACTIVE MOLECULAR-BEAM EPITAXY
Authors: KIM W YEADON M BOTCHKAREV AE MOHAMMAD SN GIBSON JM MORKOC H
Citation: W. Kim et al., SURFACE-ROUGHNESS OF NITRIDED (0001)AL2O3 AND ALN EPILAYERS GROWN ON (0001)AL2O3 BY REACTIVE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 921-927
METAL-INSULATOR-SEMICONDUCTOR STRUCTURE ON GAAS USING A PSEUDOMORPHICSI GAP INTERLAYER/
Authors: PARK DG MOHAMMAD SN CHEN Z MORKOC H
Citation: Dg. Park et al., METAL-INSULATOR-SEMICONDUCTOR STRUCTURE ON GAAS USING A PSEUDOMORPHICSI GAP INTERLAYER/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 252-258
REACTIVE MOLECULAR-BEAM EPITAXY FOR WURTZITE GAN
Authors: MOHAMMAD SN KIM W SALVADOR A MORKOC H
Citation: Sn. Mohammad et al., REACTIVE MOLECULAR-BEAM EPITAXY FOR WURTZITE GAN, MRS bulletin, 22(2), 1997, pp. 22-28
MICROWAVE PERFORMANCE OF ALGAN GAN INVERTED MODFETS/
Authors: AKTAS O FAN ZF BOTCHKAREV A MOHAMMAD SN ROTH M JENKINS T KEHIAS L MORKOC H
Citation: O. Aktas et al., MICROWAVE PERFORMANCE OF ALGAN GAN INVERTED MODFETS/, IEEE electron device letters, 18(6), 1997, pp. 293-295
CONTINUOUS ASSESSMENT OF HUMAN SPERMATOZOA VIABILITY DURING CRYOPRESERVATION
Authors: MOHAMMAD SN BARRATT CL COOKE ID MOORE HD
Citation: Sn. Mohammad et al., CONTINUOUS ASSESSMENT OF HUMAN SPERMATOZOA VIABILITY DURING CRYOPRESERVATION, Journal of andrology, 18(1), 1997, pp. 43-50
MBE GROWN HIGH-QUALITY GAN FILMS AND DEVICES
Authors: KIM W AKTAS O SALVADOR A BOTHKAREV A SVERDLOV B MOHAMMAD SN MORKOC H
Citation: W. Kim et al., MBE GROWN HIGH-QUALITY GAN FILMS AND DEVICES, Solid-state electronics, 41(2), 1997, pp. 169-175
BAND-STRUCTURE AND CONFINED ENERGY-LEVELS OF THE SI3N4 SI/GAAS SYSTEM/
Authors: CHEN Z MOHAMMAD SN PARK DG DIATEZUA DM MORKOC H CHANG YC
Citation: Z. Chen et al., BAND-STRUCTURE AND CONFINED ENERGY-LEVELS OF THE SI3N4 SI/GAAS SYSTEM/, Journal of applied physics, 82(1), 1997, pp. 275-280
SI3N4 SI/IN0.05GA0.95AS/N-GAAS METAL-INSULATOR-SEMICONDUCTOR DEVICES/
Authors: PARK DG LI D TAO M FAN ZF BOTCHKAREV AE MOHAMMAD SN MORKOC H
Citation: Dg. Park et al., SI3N4 SI/IN0.05GA0.95AS/N-GAAS METAL-INSULATOR-SEMICONDUCTOR DEVICES/, Journal of applied physics, 81(1), 1997, pp. 516-523
GAAS METAL-INSULATOR-SEMICONDUCTOR STRUCTURE AND FIELD-EFFECT TRANSISTORS GROWN BY EX-SITU APPROACH
Authors: CHEN Z MOHAMMAD SN
Citation: Z. Chen et Sn. Mohammad, GAAS METAL-INSULATOR-SEMICONDUCTOR STRUCTURE AND FIELD-EFFECT TRANSISTORS GROWN BY EX-SITU APPROACH, Electronics Letters, 33(22), 1997, pp. 1906-1907
ON THE INVERSION IN GAAS METAL-INSULATOR-SEMICONDUCTOR HETEROSTRUCTURES
Authors: CHEN Z MOHAMMAD SN PARK DG MORKOC H CHANG YC
Citation: Z. Chen et al., ON THE INVERSION IN GAAS METAL-INSULATOR-SEMICONDUCTOR HETEROSTRUCTURES, Applied physics letters, 70(2), 1997, pp. 228-230
INTERFACE PROPERTIES OF SI3N4 SI/N-GAAS METAL-INSULATOR-SEMICONDUCTORSTRUCTURE USING A SI INTERLAYER/
Authors: PARK DG CHEN Z BOTCHKAREV AE MOHAMMAD SN MORKOC H
Citation: Dg. Park et al., INTERFACE PROPERTIES OF SI3N4 SI/N-GAAS METAL-INSULATOR-SEMICONDUCTORSTRUCTURE USING A SI INTERLAYER/, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 74(3), 1996, pp. 219-234
COMPOSITION AND CONDUCTION PROPERTIES OF SILICON NITRIDES DEPOSITED BY PLASMA-ENHANCED ULTRA-HIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
Authors: MOHAMMAD SN TAO M PARK DG BOTCHKAREV AE LI D MORKOC H
Citation: Sn. Mohammad et al., COMPOSITION AND CONDUCTION PROPERTIES OF SILICON NITRIDES DEPOSITED BY PLASMA-ENHANCED ULTRA-HIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(5), 1996, pp. 817-831
ELECTRICAL-CONDUCTION IN SILICON NITRIDES DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: TAO M PARK D MOHAMMAD SN LI D BOTCHKERAV AE MORKOC H
Citation: M. Tao et al., ELECTRICAL-CONDUCTION IN SILICON NITRIDES DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(4), 1996, pp. 723-736
GATE QUALITY SI3N4 PREPARED BY LOW-TEMPERATURE REMOTE PLASMA-ENHANCEDCHEMICAL-VAPOR-DEPOSITION FOR III-V SEMICONDUCTOR-BASED METAL-INSULATOR-SEMICONDUCTOR DEVICES
Authors: PARK DG TAO M LI D BOTCHKAREV AE FAN Z WANG Z MOHAMMAD SN ROCKETT A ABELSON JR MORKOC H HEYD AR ALTEROVITZ SA
Citation: Dg. Park et al., GATE QUALITY SI3N4 PREPARED BY LOW-TEMPERATURE REMOTE PLASMA-ENHANCEDCHEMICAL-VAPOR-DEPOSITION FOR III-V SEMICONDUCTOR-BASED METAL-INSULATOR-SEMICONDUCTOR DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2674-2683
OHMIC CONTACTS AND SCHOTTKY BARRIERS TO N-GAN
Authors: FAN Z MOHAMMAD SN KIM W AKTAS O BOTCHKAREV AE SUZUE K MORKOC H DUXSTAD K HALLER EE
Citation: Z. Fan et al., OHMIC CONTACTS AND SCHOTTKY BARRIERS TO N-GAN, Journal of electronic materials, 25(11), 1996, pp. 1703-1708
DIRECT ASSESSMENT OF CRYOPRESERVATION OF HUMAN SPERMATOZOA USING A CRYOMICROSCOPE AND COMPUTER-AIDED SPERM ANALYSIS
Authors: MOHAMMAD SN BARRATT CLR COOKE ID MOORE HDM
Citation: Sn. Mohammad et al., DIRECT ASSESSMENT OF CRYOPRESERVATION OF HUMAN SPERMATOZOA USING A CRYOMICROSCOPE AND COMPUTER-AIDED SPERM ANALYSIS, Human reproduction, 11(12), 1996, pp. 2687-2692
BAND-STRUCTURE OF AL SI/N-TYPE GAAS WITH A STRAINED SI INTERFACIAL LAYER/
Authors: CHEN Z MOHAMMAD SN MORKOC H
Citation: Z. Chen et al., BAND-STRUCTURE OF AL SI/N-TYPE GAAS WITH A STRAINED SI INTERFACIAL LAYER/, Physical review. B, Condensed matter, 53(7), 1996, pp. 3879-3884
ANALYTICAL INVESTIGATION OF SURFACE-POTENTIAL AND RELATED PROPERTIES OF METAL INSULATOR/III-V SEMICONDUCTOR CAPACITORS/
Authors: STENGEL F MOHAMMAD SN MORKOC H
Citation: F. Stengel et al., ANALYTICAL INVESTIGATION OF SURFACE-POTENTIAL AND RELATED PROPERTIES OF METAL INSULATOR/III-V SEMICONDUCTOR CAPACITORS/, Solid-state electronics, 39(12), 1996, pp. 1783-1790
ANALYTICAL INVESTIGATION OF ELECTRICAL PERFORMANCE OF METAL-INSULATOR-III-V SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
Authors: STENGEL F MOHAMMAD SN MORKOC H
Citation: F. Stengel et al., ANALYTICAL INVESTIGATION OF ELECTRICAL PERFORMANCE OF METAL-INSULATOR-III-V SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Solid-state electronics, 39(11), 1996, pp. 1567-1576
ELECTRICAL-CONDUCTION IN PLATINUM-GALLIUM NITRIDE SCHOTTKY DIODES
Authors: SUZUE K MOHAMMAD SN FAN ZF KIM W AKTAS O BOTCHKAREV AE MORKOC H
Citation: K. Suzue et al., ELECTRICAL-CONDUCTION IN PLATINUM-GALLIUM NITRIDE SCHOTTKY DIODES, Journal of applied physics, 80(8), 1996, pp. 4467-4478
THEORETICAL INVESTIGATION OF ELECTRICAL CHARACTERISTICS OF ALGAN GAN MODULATION-DOPED FIELD-EFFECT TRANSISTORS/
Authors: STENGEL F MOHAMMAD SN MORKOC H
Citation: F. Stengel et al., THEORETICAL INVESTIGATION OF ELECTRICAL CHARACTERISTICS OF ALGAN GAN MODULATION-DOPED FIELD-EFFECT TRANSISTORS/, Journal of applied physics, 80(5), 1996, pp. 3031-3042
REACTIVE MOLECULAR-BEAM EPITAXY OF WURTZITE GAN - MATERIALS CHARACTERISTICS AND GROWTH-KINETICS
Authors: KIM W AKTAS O BOTCHKAREV AE SALVADOR A MOHAMMAD SN MORKOC H
Citation: W. Kim et al., REACTIVE MOLECULAR-BEAM EPITAXY OF WURTZITE GAN - MATERIALS CHARACTERISTICS AND GROWTH-KINETICS, Journal of applied physics, 79(10), 1996, pp. 7657-7666
NEAR-IDEAL PLATINUM-GAN SCHOTTKY DIODES
Authors: MOHAMMAD SN FAN Z BOTCHKAREV AE KIM W AKTAS O SALVADOR A MORKOC H
Citation: Sn. Mohammad et al., NEAR-IDEAL PLATINUM-GAN SCHOTTKY DIODES, Electronics Letters, 32(6), 1996, pp. 598-599
SUPPRESSION OF LEAKAGE CURRENTS AND THEIR EFFECT ON THE ELECTRICAL PERFORMANCE OF ALGAN GAN MODULATION-DOPED FIELD-EFFECT TRANSISTORS/
Authors: FAN ZF MOHAMMAD SN AKTAS O BOTCHKAREV AE SALVADOR A MORKOC H
Citation: Zf. Fan et al., SUPPRESSION OF LEAKAGE CURRENTS AND THEIR EFFECT ON THE ELECTRICAL PERFORMANCE OF ALGAN GAN MODULATION-DOPED FIELD-EFFECT TRANSISTORS/, Applied physics letters, 69(9), 1996, pp. 1229-1231
Risultati: 1-25 | 26-45