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Results: 1-25/40
Authors:
BARANOV PG
ILIN IV
MOKHOV EN
KHRAMTSOV VA
Citation: Pg. Baranov et al., ELECTRON-PARAMAGNETIC-RESONANCE OF DEFECTS WITH METASTABLE PROPERTIESIN CRYSTALLINE GAN, Physics of the solid state, 40(10), 1998, pp. 1648-1652
Authors:
KALABUKHOVA EN
LUKIN SN
GROMOVOI YS
MOKHOV EN
Citation: En. Kalabukhova et al., EPR-SPECTRUM OF DONORS IN 6H-SIC IN A BROAD TEMPERATURE-RANGE, Physics of the solid state, 40(10), 1998, pp. 1653-1657
Authors:
BARANOV PG
ILIN IV
MOKHOV EN
Citation: Pg. Baranov et al., ELECTRON-PARAMAGNETIC-RESONANCE OF DEEP BORON ACCEPTORS IN 4H-SIC AND3C-SIC CRYSTALS, Physics of the solid state, 40(1), 1998, pp. 31-34
Authors:
VONDUIJNARNOLD A
IKOMA T
POLUEKTOV OG
BARANOV PG
MOKHOV EN
SCHMIDT J
Citation: A. Vonduijnarnold et al., ELECTRONIC-STRUCTURE OF THE DEEP BORON ACCEPTOR IN BORON-DOPED 6H-SIC, Physical review. B, Condensed matter, 57(3), 1998, pp. 1607-1619
Authors:
VODAKOV YA
MOKHOV EN
ROENKOV AD
BOIKO ME
BARANOV PG
Citation: Ya. Vodakov et al., HIGH-RATE GAN EPITAXIAL-GROWTH BY SUBLIMATION SANDWICH METHOD, Journal of crystal growth, 183(1-2), 1998, pp. 10-14
Authors:
BARANOV PG
ILIN IV
MOKHOV EN
ROENKOV AD
KHRAMTSOV VA
Citation: Pg. Baranov et al., ELECTRON-PARAMAGNETIC-RESONANCE OF SCANDIUM IN SILICON-CARBIDE, Physics of the solid state, 39(1), 1997, pp. 44-48
Authors:
BAUR J
KUNZER M
DOMBROWSKI KF
KAUFMANN U
SCHNEIDER J
BARANOV PG
MOKHOV EN
Citation: J. Baur et al., ELECTRICALLY AND OPTICALLY-ACTIVE MOLYBDENUM IMPURITIES IN COMMERCIALSIC SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 313-316
Authors:
MOKHOV EN
RAMM MG
ROENKOV AD
VODAKOV YA
Citation: En. Mokhov et al., GROWTH OF SILICON-CARBIDE BULK CRYSTALS BY THE SUBLIMATION SANDWICH METHOD, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 317-323
Authors:
VODAKOV YA
ROENKOV AD
RAMM MG
MOKHOV EN
MAKAROV YN
Citation: Ya. Vodakov et al., USE OF TA-CONTAINER FOR SUBLIMATION GROWTH AND DOPING OF SIC BULK CRYSTALS AND EPITAXIAL LAYERS, Physica status solidi. b, Basic research, 202(1), 1997, pp. 177-200
Authors:
MATSUMOTO T
POLUEKTOV OG
SCHMIDT J
MOKHOV EN
BARANOV PG
Citation: T. Matsumoto et al., ELECTRONIC-STRUCTURE OF THE SHALLOW BORON ACCEPTOR IN 6H-SIC - A PULSED EPR ENDOR STUDY AT 95 GHZ/, Physical review. B, Condensed matter, 55(4), 1997, pp. 2219-2229
Authors:
SAPARIN GV
OBYDEN SK
IVANNIKOV PV
SHISHKIN EB
MOKHOV EN
ROENKOV AD
HOFMANN DH
Citation: Gv. Saparin et al., 3-DIMENSIONAL STUDIES OF SIC POLYTYPE TRANSFORMATIONS, Scanning, 19(4), 1997, pp. 269-274
Authors:
BARANOV PG
ILYIN IV
MOKHOV EN
Citation: Pg. Baranov et al., ELECTRON-PARAMAGNETIC-RESONANCE OF ERBIUM IN BULK SILICON-CARBIDE CRYSTALS, Solid state communications, 103(5), 1997, pp. 291-295
Authors:
BARANOV PG
ILYIN IV
MOKHOV EN
Citation: Pg. Baranov et al., IDENTIFICATION OF IRON TRANSITION GROUP TRACE IMPURITIES IN GAN BULK CRYSTALS BY ELECTRON-PARAMAGNETIC-RESONANCE, Solid state communications, 101(8), 1997, pp. 611-615
Authors:
MOKHOV EN
RAMM MG
ROENKOV AD
VODAKOV YA
Citation: En. Mokhov et al., SIC GROWTH IN TANTALUM CONTAINERS BY SUBLIMATION SANDWICH METHOD, Journal of crystal growth, 181(3), 1997, pp. 254-258
Authors:
KARPOV SY
MAKAROV YN
MOKHOV EN
RAMM MG
RAMM MS
ROENKOV AD
TALALAEV RA
VODAKOV YA
Citation: Sy. Karpov et al., ANALYSIS OF SILICON-CARBIDE GROWTH BY SUBLIMATION SANDWICH METHOD, Journal of crystal growth, 173(3-4), 1997, pp. 408-416
Authors:
BARANOV PG
MOKHOV EN
Citation: Pg. Baranov et En. Mokhov, ELECTRON-PARAMAGNETIC-RESONANCE OF BERYLL IUM, DEEP BORON AND SCANDIUM ACCEPTORS IN SILICON-CARBIDE, Fizika tverdogo tela, 38(5), 1996, pp. 1446-1464
Authors:
BARANOV PG
MOKHOV EN
Citation: Pg. Baranov et En. Mokhov, ELECTRON-PARAMAGNETIC-RESONANCE OF DEEP BORON IN SILICON-CARBIDE, Semiconductor science and technology, 11(4), 1996, pp. 489-494
Authors:
BARANOV PG
ILYIN IV
MOKHOV EN
ROENKOV AD
Citation: Pg. Baranov et al., IDENTIFICATION OF MANGANESE TRACE IMPURITY IN GAN CRYSTALS BY ELECTRON-PARAMAGNETIC-RESONANCE, Semiconductor science and technology, 11(12), 1996, pp. 1843-1846
Authors:
PRESSEL K
NILSSON S
WETZEL C
VOLM D
MEYER BK
LOA I
THURIAN P
HEITZ R
HOFFMANN A
MOKHOV EN
BARANOV PG
Citation: K. Pressel et al., OPTICAL INVESTIGATION OF DEEP DEFECTS IN GAN EPITAXIAL LAYERS GROWN ON 6H-SIC, Materials science and technology, 12(1), 1996, pp. 90-93
Authors:
DOMBROWSKI KF
KUNZER M
KAUFMANN U
SCHNEIDER J
BARANOV PG
MOKHOV EN
Citation: Kf. Dombrowski et al., IDENTIFICATION OF MOLYBDENUM IN 6H-SIC BY MAGNETIC-RESONANCE TECHNIQUES, Physical review. B, Condensed matter, 54(10), 1996, pp. 7323-7327
Authors:
MOKHOV EN
ROENKOV AD
SAPARIN GV
OBYDEN SK
Citation: En. Mokhov et al., COLOR CATHODOLUMINESCENCE-SCANNING ELECTRON-MICROSCOPY STUDY OF THE 4H-SIC HETEROEPITAXIAL LAYERS GROWN BY SUBLIMATION SANDWICH METHOD, Scanning, 18(2), 1996, pp. 67-71
Authors:
SAPARIN GV
MOKHOV EN
OBYDEN SK
ROENKOV AD
Citation: Gv. Saparin et al., REAL COLOR CATHODOLUMINESCENCE SCANNING ELECTRON-MICROSCOPY - A NEW EFFECTIVE METHOD FOR STUDY OF SIC MATERIALS AND DEVICES, Scanning, 18(1), 1996, pp. 25-34
Authors:
MARZ M
REINKE J
GREULICHWEBER S
SPAETH JM
OVERHOF H
MOKHOV EN
ROENKOV AD
KALABUKHOVA EN
Citation: M. Marz et al., ELECTRON-PARAMAGNETIC-RESONANCE OF THE SCANDIUM ACCEPTOR IN 6H SILICON-CARBIDE, Solid state communications, 98(5), 1996, pp. 439-443
Authors:
BARANOV PG
ILYIN IV
MOKHOV EN
Citation: Pg. Baranov et al., ELECTRON-PARAMAGNETIC-RESONANCE OF THE GROUP-III DEEP ACCEPTOR IMPURITIES IN SIC, Solid state communications, 100(6), 1996, pp. 371-376
Authors:
BARANOV PG
MOKHOV EN
HOFSTETTER A
SHARMANN A
Citation: Pg. Baranov et al., ELECTRON-NUCLEAR DOUBLE-RESONANCE OF DEEP-BORON ACCEPTORS IN SILICON-CARBIDE, JETP letters, 63(10), 1996, pp. 848-854