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Results:
1-16
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Results: 16
Authors:
GODIGNON P
MORVAN E
MONTSERRAT J
JORDA X
VELLVEHI M
HIDALGO S
REBOLLO J
Citation: P. Godignon et al., STUDY OF RECOIL IMPLANTATION TECHNIQUE FOR DEEP LOW DOPED JUNCTION FORMATION WITH ALUMINUM, Microelectronic engineering, 40(2), 1998, pp. 99-109
Authors:
MORVAN E
GODIGNON P
MONTSERRAT J
FERNANDEZ J
FLORES D
MILLAN J
CHANTE JP
Citation: E. Morvan et al., MONTECARLO SIMULATION OF ION-IMPLANTATION INTO SIC-6H SINGLE-CRYSTAL INCLUDING CHANNELING EFFECT, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 218-222
Authors:
GARRIDO B
SAMITIER J
BOTA S
MORENO JA
MONTSERRAT J
MORANTE JR
Citation: B. Garrido et al., RECONSTRUCTION OF THE SIO2 STRUCTURE DAMAGED BY LOW-ENERGY AR-IMPLANTED IONS, Journal of applied physics, 81(1), 1997, pp. 126-134
Authors:
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
ACERO MC
ESTEVE J
MONTSERRAT J
ELHASSANI A
Citation: A. Perezrodriguez et al., ETCH-STOP BEHAVIOR OF BURIED LAYERS FORMED BY SUBSTOICHIOMETRIC NITROGEN ION-IMPLANTATION INTO SILICON, Journal of the Electrochemical Society, 143(3), 1996, pp. 1026-1033
Authors:
GARRIDO B
MONTSERRAT J
MORANTE JR
Citation: B. Garrido et al., THE ROLE OF CHEMICAL-SPECIES IN THE PASSIVATION OF [100] SILICON SURFACES BY HF IN WATER-ETHANOL SOLUTIONS, Journal of the Electrochemical Society, 143(12), 1996, pp. 4059-4066
Authors:
CALVOBARRIO L
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
MONTSERRAT J
Citation: L. Calvobarrio et al., ION-BEAM SYNTHESIS OF ALUMINUM NITRIDE - CHARACTERIZATION OF THIN ALNLAYERS FORMED IN MICROELECTRONICS ALUMINUM, Materials science and technology, 11(11), 1995, pp. 1187-1190
Authors:
DUENAS S
CASTAN E
QUINTANILLA L
ENRIQUEZ L
BARBOLLA J
LORATAMAYO E
MONTSERRAT J
Citation: S. Duenas et al., ABILITY OF CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE TO STUDY SPATIAL-DISTRIBUTION AND ELECTRIC-FIELD DEPENDENCE OF EMISSION PROPERTIES OF DEEP LEVELS IN SEMICONDUCTORS, Materials science and technology, 11(10), 1995, pp. 1074-1078
Authors:
MONTSERRAT J
Citation: J. Montserrat, IS THE WORLD REALLY IN MY HEAD, REGARDING GIBSON,J.J. AND MARR,D., Pensamiento, 51(200), 1995, pp. 177-213
Authors:
GARRIDO B
SAMITIER J
BOTA S
DOMINGUEZ C
MONTSERRAT J
MORANTE JR
Citation: B. Garrido et al., STRUCTURAL DAMAGE AND DEFECTS CREATED IN SIO2-FILMS BY AR ION-IMPLANTATION, Journal of non-crystalline solids, 187, 1995, pp. 101-105
Authors:
ACERO MC
ESTEVE J
MONTSERRAT J
BAUSELLS J
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
Citation: Mc. Acero et al., ANISOTROPIC ETCH-STOP PROPERTIES OF NITROGEN-IMPLANTED SILICON, Sensors and actuators. A, Physical, 45(3), 1994, pp. 219-225
Authors:
DUENAS S
CASTAN E
ENRIQUEZ L
BARBOLLA J
MONTSERRAT J
LORATAMAYO E
Citation: S. Duenas et al., CHARACTERIZATION OF THE DAMAGE-INDUCED IN BORON-IMPLANTED AND RTA ANNEALED SILICON BY THE CAPACITANCE-VOLTAGE TRANSIENT TECHNIQUE, Semiconductor science and technology, 9(9), 1994, pp. 1637-1648
Authors:
CALVO L
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
MONTSERRAT J
Citation: L. Calvo et al., STRUCTURAL-ANALYSIS OF BURIED ALN THIN-FILMS FORMED BY NITROGEN IMPLANTATION INTO MICROELECTRONICS GRADE ALUMINUM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 214-217
Authors:
GARRIDO B
SAMITIER J
MORANTE JR
MONTSERRAT J
DOMINGUEZ C
Citation: B. Garrido et al., CONFIGURATIONAL STATISTICAL-MODEL FOR THE DAMAGED STRUCTURE OF SILICON-OXIDE AFTER ION-IMPLANTATION, Physical review. B, Condensed matter, 49(21), 1994, pp. 14845-14849
Authors:
DOMINGUEZ C
GARRIDO B
MONTSERRAT J
MORANTE JR
SAMITIER J
Citation: C. Dominguez et al., ETCHING RATE MODIFICATION IN SILICON-OXIDE BY ION-IMPLANTATION AND RAPID THERMAL ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1367-1370
Authors:
BOTA SA
MONTSERRAT J
PEREZRODRIGUEZ A
MORANTE JR
Citation: Sa. Bota et al., ANALYSIS OF THE SIO2 DEFECTS ORIGINATED BY PHOSPHORUS IMPLANTATION INMOS STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 612-615
Authors:
ROMANORODRIGUEZ A
ELHASSANI A
SAMITIER J
PEREZRODRIGUEZ A
MARTINEZ S
MORANTE JR
ESTEVE J
MONTSERRAT J
Citation: A. Romanorodriguez et al., STRUCTURAL CHARACTERIZATION OF NITROGEN ION-IMPLANTATION INTO SILICONFOR SENSOR TECHNOLOGY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 702-705
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1-16
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