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Results: 1-7 |
Results: 7
INFLUENCE OF QUADRATIC MOBILITY DEGRADATION FACTOR ON LOW-FREQUENCY NOISE IN MOS-TRANSISTORS
Authors: MASSON P GHIBAUDO G AUTRAN JL MORFOULI P BRINI J
Citation: P. Masson et al., INFLUENCE OF QUADRATIC MOBILITY DEGRADATION FACTOR ON LOW-FREQUENCY NOISE IN MOS-TRANSISTORS, Electronics Letters, 34(20), 1998, pp. 1977-1979
ELECTRICAL AND RELIABILITY PROPERTIES OF THIN SILICON OXINITRIDE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: MORFOULI P GHIBAUDO G VOGEL EM HILL WL MISRA V MCLARTY PK WORTMAN JJ
Citation: P. Morfouli et al., ELECTRICAL AND RELIABILITY PROPERTIES OF THIN SILICON OXINITRIDE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Solid-state electronics, 41(7), 1997, pp. 1051-1055
LOW-FREQUENCY NOISE CHARACTERIZATION OF N-MOSFET AND P-MOSFET WITH ULTRATHIN OXYNITRIDE GATE FILMS
Authors: MORFOULI P GHIBAUDO G OUISSE T VOGEL E HILL W MISRA V MCLARTY P WORTMAN JJ
Citation: P. Morfouli et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF N-MOSFET AND P-MOSFET WITH ULTRATHIN OXYNITRIDE GATE FILMS, IEEE electron device letters, 17(8), 1996, pp. 395-397
MOBILITY BEHAVIOR OF N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: VOGEL EM HILL WL MISRA V MCLARTY PK WORTMAN JJ HAUSER JR MORFOULI P GHIBAUDO G OUISSE T
Citation: Em. Vogel et al., MOBILITY BEHAVIOR OF N-CHANNEL AND P-CHANNEL MOSFETS WITH OXYNITRIDE GATE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 753-758
MICROELECTRONICS PRACTICAL TRAINING AT EN SERG - PROCESS CHARACTERIZATION VS SIMULATION
Authors: GUILLEMOT N MATHIEU N MORFOULI P BRINI J
Citation: N. Guillemot et al., MICROELECTRONICS PRACTICAL TRAINING AT EN SERG - PROCESS CHARACTERIZATION VS SIMULATION, Onde electrique, 75(1), 1995, pp. 25-28
ON THE MOBILITY OF N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: MCLARTY PK MISRA V HILL W WORTMAN JJ HAUSER JR MORFOULI P OUISSE T
Citation: Pk. Mclarty et al., ON THE MOBILITY OF N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS PREPARED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 66(1), 1995, pp. 73-75
HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT
Authors: BILLON T OUISSE T LASSAGNE P JASSAUD C PONTHENIER JL BAUD L BECOURT N MORFOULI P
Citation: T. Billon et al., HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT, Electronics Letters, 30(2), 1994, pp. 170-171
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