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Results: 1-8 |
Results: 8
KINETICS OF THE REDISTRIBUTION OF AN IMPURITY IN QUASI-PERIODIC STRUCTURES APPEARING IN HEAVILY BORON-DOPED SILICON IRRADIATED BY BORON IONS
Authors: MYASNIKOV AM OBODNIKOV VI SERYAPIN VG TISHKOVSKII EG FOMIN BI CHEREPOV EI
Citation: Am. Myasnikov et al., KINETICS OF THE REDISTRIBUTION OF AN IMPURITY IN QUASI-PERIODIC STRUCTURES APPEARING IN HEAVILY BORON-DOPED SILICON IRRADIATED BY BORON IONS, Semiconductors, 31(6), 1997, pp. 600-604
FORMATION OF A QUASI-PERIODIC BORON DISTRIBUTION IN SILICON, INITIATED BY ION-IMPLANTATION
Authors: MYASNIKOV AM OBODNIKOV VI SERYAPIN VG TISHKOVSKII EG FOMIN BI CHEREPOV EI
Citation: Am. Myasnikov et al., FORMATION OF A QUASI-PERIODIC BORON DISTRIBUTION IN SILICON, INITIATED BY ION-IMPLANTATION, Semiconductors, 31(3), 1997, pp. 279-282
DISTRIBUTION OF IMPURITIES IMPLANTED IN INSB AND INAS BEFORE AND AFTER ANNEALING
Authors: GERASIMENKO NN KURYSHEV GL MYASNIKOV AM OBODNIKOV VI VERNER IV
Citation: Nn. Gerasimenko et al., DISTRIBUTION OF IMPURITIES IMPLANTED IN INSB AND INAS BEFORE AND AFTER ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 446-450
SIMS STUDY ON REDISTRIBUTION OF IMPLANTED IMPURITIES IN INSB AND INASDURING POSTIMPLANTATION ANNEALING
Authors: GERASIMENKO NN KHRYASHCHEV GS KURYSHEV GL MYASNIKOV AM OBODNIKOV VI
Citation: Nn. Gerasimenko et al., SIMS STUDY ON REDISTRIBUTION OF IMPLANTED IMPURITIES IN INSB AND INASDURING POSTIMPLANTATION ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 111(3-4), 1996, pp. 281-284
A SECONDARY-ION MASS-SPECTROMETRY STUDY OF P(+) POROUS SILICON
Authors: KARANOVICH AA ROMANOV SI KIRIENKO VV MYASNIKOV AM OBODNIKOV VI
Citation: Aa. Karanovich et al., A SECONDARY-ION MASS-SPECTROMETRY STUDY OF P(+) POROUS SILICON, Journal of physics. D, Applied physics, 28(11), 1995, pp. 2345-2348
REDISTRIBUTION OF BERYLLIUM IN INSB AND INAS RESULTING FROM ION-IMPLANTATION AND SUBSEQUENT ANNEALING
Authors: KURYSHEV GL MYASNIKOV AM OBODNIKOV VI SAFRONOV LN KHRYASCHEV GS
Citation: Gl. Kuryshev et al., REDISTRIBUTION OF BERYLLIUM IN INSB AND INAS RESULTING FROM ION-IMPLANTATION AND SUBSEQUENT ANNEALING, Semiconductors, 28(3), 1994, pp. 267-269
FORMATION OF A LAYERED STRUCTURE IN THE DISTRIBUTION OF BORON ATOMS INITIATED IN SILICON BY ION-IMPLANTATION
Authors: MYASNIKOV AM OBODNIKOV VI SERYAPIN VG TISHKOVSKII EG FOMIN BI CHEREPOV EI
Citation: Am. Myasnikov et al., FORMATION OF A LAYERED STRUCTURE IN THE DISTRIBUTION OF BORON ATOMS INITIATED IN SILICON BY ION-IMPLANTATION, JETP letters, 60(2), 1994, pp. 102-105
REDISTRIBUTION OF MAGNESIUM IN INAS DURING POSTIMPLANTATION ANNEALING
Authors: GERASIMENKO NN MYASNIKOV AM OBODNIKOV VI SAFRONOV LN
Citation: Nn. Gerasimenko et al., REDISTRIBUTION OF MAGNESIUM IN INAS DURING POSTIMPLANTATION ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 924-926
Risultati: 1-8 |