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Results: 1-19 |
Results: 19
Revised charge redistribution on semiconductor III-V (110) surfaces
Authors: Mankefors, S Nilsson, PO
Citation: S. Mankefors et Po. Nilsson, Revised charge redistribution on semiconductor III-V (110) surfaces, J PHYS-COND, 13(5), 2001, pp. 823-832
Electronic structure of ultrathin Ge layers buried in Si(100) - art. no. 115306
Authors: Nilsson, PO Mankefors, S Guo, J Nordgren, J Debowska-Nilsson, D Ni, WX Hansson, GV
Citation: Po. Nilsson et al., Electronic structure of ultrathin Ge layers buried in Si(100) - art. no. 115306, PHYS REV B, 6411(11), 2001, pp. 5306
Thickness-dependent valence-band photoemission from thin InAs and GaAs films - art. no. 195314
Authors: Asklund, H Ilver, L Kanski, J Mankefors, S Sodervall, U Sadowski, J
Citation: H. Asklund et al., Thickness-dependent valence-band photoemission from thin InAs and GaAs films - art. no. 195314, PHYS REV B, 6319(19), 2001, pp. 5314
Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAs
Authors: Mankefors, S Nilsson, PO Kanski, J Andersson, T Karlsson, K Agui, A Sathe, C Guo, JH Nordgren, J
Citation: S. Mankefors et al., Theoretical investigation of the thickness dependence of soft-x-ray emission from thin AlAs(100) layers buried in GaAs, PHYS REV B, 61(8), 2000, pp. 5540-5545
Interaction between As and InP(110) studied by photoemission
Authors: Oscarsson, H He, ZQ Ilver, L Kanski, J Mankefors, S Nilsson, PO Karlsson, UO
Citation: H. Oscarsson et al., Interaction between As and InP(110) studied by photoemission, PHYS REV B, 61(3), 2000, pp. 2065-2072
Ab initio investigation of the electronic and geometric structure of zincblende Ga1-xTlxAs alloys
Authors: Mankefors, S Svensson, SP
Citation: S. Mankefors et Sp. Svensson, Ab initio investigation of the electronic and geometric structure of zincblende Ga1-xTlxAs alloys, J PHYS-COND, 12(7), 2000, pp. 1223-1237
Reversed trend in polarity for alkaline earth oxides - an ab initio study
Authors: Mankefors, S
Citation: S. Mankefors, Reversed trend in polarity for alkaline earth oxides - an ab initio study, J PHYS-COND, 12(11), 2000, pp. 2423-2428
Local ionicity - an alternative definition for ab initio calculations
Authors: Mankefors, S Nilsson, PO
Citation: S. Mankefors et Po. Nilsson, Local ionicity - an alternative definition for ab initio calculations, J PHYS-COND, 12(11), 2000, pp. 2429-2437
Direct observation of interface effects of thin AlAs(100) layers buried inGaAs
Authors: Agui, A Sathe, C Guo, JH Nordgren, J Mankefors, S Nilsson, PO Kanski, J Andersson, TG Karlsson, K
Citation: A. Agui et al., Direct observation of interface effects of thin AlAs(100) layers buried inGaAs, APPL SURF S, 166(1-4), 2000, pp. 309-312
Electronic structure of ultrathin AlAs(100) layers buried in GaAs
Authors: Mankefors, S
Citation: S. Mankefors, Electronic structure of ultrathin AlAs(100) layers buried in GaAs, APPL SURF S, 166(1-4), 2000, pp. 313-316
A theoretical investigation of ideal III-V (211) surfaces
Authors: Mankefors, S
Citation: S. Mankefors, A theoretical investigation of ideal III-V (211) surfaces, SURF SCI, 453(1-3), 2000, pp. 171-182
Possible metallicity in SiO and GeO solids
Authors: Mankefors, S Andersson, TG Panas, I
Citation: S. Mankefors et al., Possible metallicity in SiO and GeO solids, CHEM P LETT, 322(3-4), 2000, pp. 166-174
An ultrathin buried Si layer in GaAs studied by soft X-ray emission spectroscopy and surface X-ray diffraction: theory and experiment
Authors: Nilsson, PO Mankefors, S Lundgren, E
Citation: Po. Nilsson et al., An ultrathin buried Si layer in GaAs studied by soft X-ray emission spectroscopy and surface X-ray diffraction: theory and experiment, J ALLOY COM, 286(1-2), 1999, pp. 31-36
Ab initio calculations of the geometry and electronic structure of hydrogenated As/Ge(100)
Authors: Mankefors, S Nilsson, PO Kanski, J
Citation: S. Mankefors et al., Ab initio calculations of the geometry and electronic structure of hydrogenated As/Ge(100), PHYS REV B, 60(3), 1999, pp. 1933-1938
Very-low-energy electron diffraction on the H-terminated Si(111) surface: Ab initio pseudopotential analysis
Authors: Strocov, VN Mankefors, S Nilsson, PO Kanski, J Ilver, L Starnberg, HI
Citation: Vn. Strocov et al., Very-low-energy electron diffraction on the H-terminated Si(111) surface: Ab initio pseudopotential analysis, PHYS REV B, 59(8), 1999, pp. R5296-R5299
Scheme for calculating the electronic structure of polar surfaces
Authors: Mankefors, S
Citation: S. Mankefors, Scheme for calculating the electronic structure of polar surfaces, PHYS REV B, 59(20), 1999, pp. 13151-13156
Semiconductor polar surfaces: mechanisms of the stability of non-reconstructed III-V ((1)over-bar(1)over-bar(1)over-bar) surfaces
Authors: Mankefors, S Nilsson, PO Kanski, J
Citation: S. Mankefors et al., Semiconductor polar surfaces: mechanisms of the stability of non-reconstructed III-V ((1)over-bar(1)over-bar(1)over-bar) surfaces, SURF SCI, 443(3), 1999, pp. L1049-L1054
Ab initio study of the Ge(211) and Si(211) bulk terminated surfaces
Authors: Mankefors, S
Citation: S. Mankefors, Ab initio study of the Ge(211) and Si(211) bulk terminated surfaces, SURF SCI, 443(1-2), 1999, pp. 99-104
Hydrogenation of As/Ge(100) 2 x 1: a theoretical study of the surface electronic structure
Authors: Mankefors, S Nilsson, PO Kanski, J
Citation: S. Mankefors et al., Hydrogenation of As/Ge(100) 2 x 1: a theoretical study of the surface electronic structure, SURF SCI, 435, 1999, pp. 342-346
Risultati: 1-19 |