AAAAAA

   
Results: 1-13 |
Results: 13
Frequency-dependent resistive and capacitive components in RF MOSFETs
Authors: Cheng, YH Matloubian, M
Citation: Yh. Cheng et M. Matloubian, Frequency-dependent resistive and capacitive components in RF MOSFETs, IEEE ELEC D, 22(7), 2001, pp. 333-335
High frequency characterization of gate resistance in RF MOSFETs
Authors: Cheng, YH Matloubian, M
Citation: Yh. Cheng et M. Matloubian, High frequency characterization of gate resistance in RF MOSFETs, IEEE ELEC D, 22(2), 2001, pp. 98-100
Distinct CD8 T cell functions mediate susceptibility to histoplasmosis during chronic viral infection
Authors: Wu-Hsieh, BA Whitmire, JK de Fries, R Lin, JS Matloubian, M Ahmed, R
Citation: Ba. Wu-hsieh et al., Distinct CD8 T cell functions mediate susceptibility to histoplasmosis during chronic viral infection, J IMMUNOL, 167(8), 2001, pp. 4566-4573
A transmembrane CXC chemokine is a ligand for HIV-coreceptor Bonzo
Authors: Matloubian, M David, A Engel, S Ryan, JE Cyster, JG
Citation: M. Matloubian et al., A transmembrane CXC chemokine is a ligand for HIV-coreceptor Bonzo, NAT IMMUNOL, 1(4), 2000, pp. 298-304
Optical mixing with difference frequencies to 552 GHz in ultrafast high electron mobility transistors
Authors: Ali, ME Ramesh, KS Fetterman, HR Matloubian, M Boll, G
Citation: Me. Ali et al., Optical mixing with difference frequencies to 552 GHz in ultrafast high electron mobility transistors, IEEE PHOTON, 12(7), 2000, pp. 879-881
On the high-frequency characteristics of substrate resistance in RF MOSFETs
Authors: Cheng, YH Matloubian, M
Citation: Yh. Cheng et M. Matloubian, On the high-frequency characteristics of substrate resistance in RF MOSFETs, IEEE ELEC D, 21(12), 2000, pp. 604-606
Electrical characterisation of short gate In0.60Ga0.40As/In0.36Al0.64As0.84Sb0.16 high electron mobility transistors on InP substrate
Authors: Micovic, M Matloubian, M Hu, M Harvey, DS Nguyen, C Janke, P
Citation: M. Micovic et al., Electrical characterisation of short gate In0.60Ga0.40As/In0.36Al0.64As0.84Sb0.16 high electron mobility transistors on InP substrate, ELECTR LETT, 36(4), 2000, pp. 357-358
A role for perforin in downregulating T-cell responses during chronic viral infection
Authors: Matloubian, M Suresh, M Glass, A Galvan, M Chow, K Whitmire, JK Walsh, CM Clark, WR Ahmed, R
Citation: M. Matloubian et al., A role for perforin in downregulating T-cell responses during chronic viral infection, J VIROLOGY, 73(3), 1999, pp. 2527-2536
A measurement-based design equation for the attenuation of MMIC-compatiblecoplanar waveguides
Authors: Ponchak, GE Matloubian, M Katehi, LPB
Citation: Ge. Ponchak et al., A measurement-based design equation for the attenuation of MMIC-compatiblecoplanar waveguides, IEEE MICR T, 47(2), 1999, pp. 241-243
On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness
Authors: Meneghesso, G Neviani, A Oesterholt, R Matloubian, M Liu, TK Brown, JJ Canali, C Zanoni, E
Citation: G. Meneghesso et al., On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness, IEEE DEVICE, 46(1), 1999, pp. 2-9
A high-gain monolithic D-band InPHEMT amplifier
Authors: Pobanz, CW Matloubian, M Lui, M Sun, HC Case, M Ngo, CM Janke, P Gaier, T Samoska, L
Citation: Cw. Pobanz et al., A high-gain monolithic D-band InPHEMT amplifier, IEEE J SOLI, 34(9), 1999, pp. 1219-1224
Applications of InP-based transistors for microwave and millimeter-wave systems
Authors: Matloubian, M
Citation: M. Matloubian, Applications of InP-based transistors for microwave and millimeter-wave systems, WILEY MICRO, 1999, pp. 37-69
112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers
Authors: Agarwal, B Schmitz, AE Brown, JJ Matloubian, M Case, MG Le, M Lui, M Rodwell, MJW
Citation: B. Agarwal et al., 112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers, IEEE MICR T, 46(12), 1998, pp. 2553-2559
Risultati: 1-13 |