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Results:
1-15
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Results: 15
Authors:
Liu, ACY
McCallum, JC
Wong-Leung, J
Citation: Acy. Liu et al., Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation, J MATER RES, 16(11), 2001, pp. 3229-3237
Authors:
Heitmann, J
McCallum, JC
Meijer, J
Stephan, A
Butz, T
Zacharias, M
Citation: J. Heitmann et al., Si-doped luminescence gratings, NUCL INST B, 181, 2001, pp. 263-267
Authors:
Morpeth, LD
McCallum, JC
Jamieson, DN
Citation: Ld. Morpeth et al., Structural characterisation of Ti : sapphire regions formed by localised high-energy implantation of Ti and O ions, NUCL INST B, 181, 2001, pp. 372-376
Authors:
Liu, ACY
McCallum, JC
Wong-Leung, J
Citation: Acy. Liu et al., The crystallisation of deep amorphous wells in silicon produced by ion implantation, NUCL INST B, 175, 2001, pp. 164-168
Authors:
Morpeth, LD
McCallum, JC
Citation: Ld. Morpeth et Jc. Mccallum, Ti : sapphire formation via the co-implantation of Ti and O ions into sapphire, NUCL INST B, 175, 2001, pp. 537-541
Authors:
Orwa, JO
Jamieson, DN
Prawer, S
McCallum, JC
Citation: Jo. Orwa et al., Carbon diffusion and nanocrystalline diamond formation in carbon ion-implanted oxides studied by nuclear elastic scattering, NUCL INST B, 175, 2001, pp. 554-558
Authors:
Orwa, JO
Prawer, S
Jamieson, DN
Peng, JL
McCallum, JC
Nugent, KW
Li, YJ
Bursill, LA
Withrow, SP
Citation: Jo. Orwa et al., Diamond nanocrystals formed by direct implantation of fused silica with carbon, J APPL PHYS, 90(6), 2001, pp. 3007-3018
Authors:
Heitmann, J
McCallum, JC
Troger, W
Butz, T
Hesse, R
Citation: J. Heitmann et al., Concentration profiles and structural changes of silver intercalated titanium disulfide, NUCL INST B, 161, 2000, pp. 619-623
Authors:
Prawer, S
Peng, JL
Orwa, JO
McCallum, JC
Jamieson, DN
Bursill, LA
Citation: S. Prawer et al., Size dependence of structural stability in nanocrystalline diamond, PHYS REV B, 62(24), 2000, pp. R16360-R16363
Authors:
Morpeth, LD
McCallum, JC
Citation: Ld. Morpeth et Jc. Mccallum, Formation of Ti3+ in sapphire by co-implantation of Ti and O ions, APPL PHYS L, 76(4), 2000, pp. 424-426
Authors:
Orwa, JO
McCallum, JC
Prawer, S
Nugent, KW
Jamieson, DN
Citation: Jo. Orwa et al., Diamond-like carbon nanocrystals formed by implanting fused quartz and sapphire (alpha-Al2O3) with carbon ions, DIAM RELAT, 8(8-9), 1999, pp. 1642-1647
Authors:
Zhu, XF
Williams, JS
McCallum, JC
Citation: Xf. Zhu et al., Structural changes in ultra-high-dose self-implanted crystalline and amorphous silicon, NUCL INST B, 148(1-4), 1999, pp. 268-272
Authors:
McCallum, JC
Citation: Jc. Mccallum, The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers, NUCL INST B, 148(1-4), 1999, pp. 350-354
Authors:
McCallum, JC
Morpeth, LD
Citation: Jc. Mccallum et Ld. Morpeth, Synthesis of Ti : sapphire by ion implantation, NUCL INST B, 148(1-4), 1999, pp. 726-729
Authors:
Zhu, XF
Williams, JS
Llewellyn, DJ
McCallum, JC
Citation: Xf. Zhu et al., Instability of nanocavities in amorphous silicon, APPL PHYS L, 74(16), 1999, pp. 2313-2315
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1-15
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