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Results: 1-12 |
Results: 12
Laser processing of amorphous silicon for large-area polysilicon imagers
Authors: Boyce, JB Fulks, RT Ho, J Lau, R Lu, JP Mei, P Street, RA Van Schuylenbergh, KF Wang, Y
Citation: Jb. Boyce et al., Laser processing of amorphous silicon for large-area polysilicon imagers, THIN SOL FI, 383(1-2), 2001, pp. 137-142
Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates
Authors: Wong, WS Kneissl, M Mei, P Treat, DW Teepe, M Johnson, NM
Citation: Ws. Wong et al., Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates, APPL PHYS L, 78(9), 2001, pp. 1198-1200
The integration of InxGa1-xN multiple-quantum-well laser diodes with copper substrates by laser lift-off
Authors: Wong, WS Kneissl, M Mei, P Treat, DW Teepe, M Johnson, NM
Citation: Ws. Wong et al., The integration of InxGa1-xN multiple-quantum-well laser diodes with copper substrates by laser lift-off, JPN J A P 2, 39(12A), 2000, pp. L1203-L1205
Excimer laser processing for a-Si and poly-Si thin film transistors for imager applications
Authors: Lu, JP Mei, P Fulks, RT Rahn, J Ho, J Wang, Y Boyce, JB Street, RA
Citation: Jp. Lu et al., Excimer laser processing for a-Si and poly-Si thin film transistors for imager applications, J VAC SCI A, 18(4), 2000, pp. 1823-1829
Pulsed laser crystallization and doping for thin film transistors
Authors: Mei, P Boyce, JB Lu, JP Ho, J Fulks, RT
Citation: P. Mei et al., Pulsed laser crystallization and doping for thin film transistors, J NON-CRYST, 266, 2000, pp. 1252-1259
The impact of self-aligned amorphous Si thin film transistors on imager array applications
Authors: Lu, JP Mei, P Rahn, J Ho, J Wang, Y Boyce, JB Street, RA
Citation: Jp. Lu et al., The impact of self-aligned amorphous Si thin film transistors on imager array applications, J NON-CRYST, 266, 2000, pp. 1294-1298
Luminescence quantum yield of molecular aggregates and excitons in alpha-sexithienyl thin films at variable temperature
Authors: Mei, P Murgia, M Taliani, C Lunedei, E Muccini, M
Citation: P. Mei et al., Luminescence quantum yield of molecular aggregates and excitons in alpha-sexithienyl thin films at variable temperature, J APPL PHYS, 88(9), 2000, pp. 5158-5165
InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metalbonding and laser lift-off
Authors: Wong, WS Sands, T Cheung, NW Kneissl, M Bour, DP Mei, P Romano, LT Johnson, NM
Citation: Ws. Wong et al., InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metalbonding and laser lift-off, APPL PHYS L, 77(18), 2000, pp. 2822-2824
Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates
Authors: Bour, DP Nickel, NM Van de Walle, CG Kneissl, MS Krusor, BS Mei, P Johnson, NM
Citation: Dp. Bour et al., Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates, APPL PHYS L, 76(16), 2000, pp. 2182-2184
Control of layer intermixing by impurities and defects
Authors: Sun, D Mei, P
Citation: D. Sun et P. Mei, Control of layer intermixing by impurities and defects, OPTOEL PROP, 8, 2000, pp. 267-306
High resolution x-ray imaging using amorphous silicon flat-panel arrays
Authors: Rahn, JT Lemmi, F Lu, JP Mei, P Apte, RB Street, RA Lujan, R Weisfield, RL Heanue, JA
Citation: Jt. Rahn et al., High resolution x-ray imaging using amorphous silicon flat-panel arrays, IEEE NUCL S, 46(3), 1999, pp. 457-461
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
Authors: Wong, WS Sands, T Cheung, NW Kneissl, M Bour, DP Mei, P Romano, LT Johnson, NM
Citation: Ws. Wong et al., Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off, APPL PHYS L, 75(10), 1999, pp. 1360-1362
Risultati: 1-12 |