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Results:
1-7
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Results: 7
Authors:
Gilet, P
Grenouillet, L
Duvaut, P
Ballet, P
Rolland, G
Vannuffel, C
Million, A
Citation: P. Gilet et al., Growth and characterization of GaInNAs/GaAs multiquantum wells, J VAC SCI B, 19(4), 2001, pp. 1422-1425
Authors:
Ferret, P
Zanatta, JP
Hamelin, R
Cremer, S
Million, A
Wolny, M
Destefanis, G
Citation: P. Ferret et al., Status of the MBE technology at Leti LIR for the manufacturing of HgCdTe focal plane arrays, J ELEC MAT, 29(6), 2000, pp. 641-647
Authors:
Erne, BH
Mathieu, C
Vigneron, J
Million, A
Etcheberry, A
Citation: Bh. Erne et al., Porous anodic etching of p-Cd1-xZnxTe studied by photocurrent spectroscopy, J ELCHEM SO, 147(10), 2000, pp. 3759-3767
Authors:
Grenouillet, L
Bru-Chevallier, C
Guillot, G
Gilet, P
Duvaut, P
Vannuffel, C
Million, A
Chenevas-Paule, A
Citation: L. Grenouillet et al., Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well, APPL PHYS L, 76(16), 2000, pp. 2241-2243
Authors:
Erne, BH
Million, A
Vigneron, J
Mathieu, C
Debiemme-Chouvy, C
Etcheberry, A
Citation: Bh. Erne et al., Porosity and tellurium-enrichment of anodized p-Cd0.95Zn0.05Te, EL SOLID ST, 2(12), 1999, pp. 619-621
Authors:
Gilet, P
Chenevas-Paule, A
Duvaut, P
Grenouillet, L
Holliger, P
Million, A
Rolland, G
Vannuffel, C
Citation: P. Gilet et al., Growth and characterization of thick GaAsN epilayers and GaInNAs/GaAs multiquantum wells, PHYS ST S-A, 176(1), 1999, pp. 279-283
Authors:
Dhar, NK
Zanatta, JP
Ferret, P
Million, A
Citation: Nk. Dhar et al., Characteristics of HgCdTe CdTe hetero-epitaxial system and mid-wave diodeson 2 inch silicon, J CRYST GR, 202, 1999, pp. 975-979
Risultati:
1-7
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