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Results: 1-14 |
Results: 14
Field effect transistors: FETs AND HEMTs
Authors: Chavarkar, P Mishra, U
Citation: P. Chavarkar et U. Mishra, Field effect transistors: FETs AND HEMTs, THIN FILM, 28, 2001, pp. 71-145
Electrosynthesis and characterisation of polyaniline with and without SDS modification
Authors: Singh, K Mishra, U Tiwari, AK
Citation: K. Singh et al., Electrosynthesis and characterisation of polyaniline with and without SDS modification, I J CHEM A, 40(11), 2001, pp. 1222-1225
Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure
Authors: Lin, YY Zhang, YF Singh, J York, R Mishra, U
Citation: Yy. Lin et al., Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure, J APPL PHYS, 89(3), 2001, pp. 1856-1860
Generation of coherent acoustic phonons in strained GaN thin films
Authors: Huang, YK Chern, GW Sun, CK Smorchkova, Y Keller, S Mishra, U DenBaars, SP
Citation: Yk. Huang et al., Generation of coherent acoustic phonons in strained GaN thin films, APPL PHYS L, 79(20), 2001, pp. 3361-3363
Polarization effects and transport in AlGaN/GaN system
Authors: Zhang, YF Smorchkova, Y Elsass, C Keller, S Ibbetson, J DenBaars, S Mishra, U Singh, J
Citation: Yf. Zhang et al., Polarization effects and transport in AlGaN/GaN system, J VAC SCI B, 18(4), 2000, pp. 2322-2327
Large near resonance third order nonlinearity in GaN
Authors: Sun, CK Huang, YL Liang, JC Wang, JC Gan, KG Kao, FJ Keller, S Mack, MP Mishra, U Denbaars, SP
Citation: Ck. Sun et al., Large near resonance third order nonlinearity in GaN, OPT QUANT E, 32(4-5), 2000, pp. 619-640
Broadband GaAs MESFET and GaNHEMT resistive feedback power amplifiers
Authors: Krishnamurthy, K Vetury, R Keller, S Mishra, U Rodwell, MJW Long, SI
Citation: K. Krishnamurthy et al., Broadband GaAs MESFET and GaNHEMT resistive feedback power amplifiers, IEEE J SOLI, 35(9), 2000, pp. 1285-1292
Solar-blind AlGaN-based inverted heterostructure photodiodes
Authors: Tarsa, EJ Kozodoy, P Ibbetson, J Keller, BP Parish, G Mishra, U
Citation: Ej. Tarsa et al., Solar-blind AlGaN-based inverted heterostructure photodiodes, APPL PHYS L, 77(3), 2000, pp. 316-318
Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
Authors: Heying, B Smorchkova, I Poblenz, C Elsass, C Fini, P Den Baars, S Mishra, U Speck, JS
Citation: B. Heying et al., Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy, APPL PHYS L, 77(18), 2000, pp. 2885-2887
Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge
Authors: Singh, M Zhang, YF Singh, J Mishra, U
Citation: M. Singh et al., Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge, APPL PHYS L, 77(12), 2000, pp. 1867-1869
Two-photon absorption study of GaN
Authors: Sun, CK Liang, JC Wang, JC Kao, FJ Keller, S Mack, MP Mishra, U DenBaars, SP
Citation: Ck. Sun et al., Two-photon absorption study of GaN, APPL PHYS L, 76(4), 2000, pp. 439-441
Channeling as a mechanism for dry etch damage in GaN
Authors: Haberer, ED Chen, CH Abare, A Hansen, M Denbaars, S Coldren, L Mishra, U Hu, EL
Citation: Ed. Haberer et al., Channeling as a mechanism for dry etch damage in GaN, APPL PHYS L, 76(26), 2000, pp. 3941-3943
Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology
Authors: Jenkins, TJ Kehias, L Parikh, P Ibbetson, J Mishra, U Docter, D Le, M Pusl, J Widman, D
Citation: Tj. Jenkins et al., Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology, IEEE J SOLI, 34(9), 1999, pp. 1239-1245
Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications
Authors: Parikh, P Ibbetson, J Mishra, U Docter, D Le, M Kiziloglu, K Grider, D Pusl, J Widman, D Kehias, L Jenkins, T
Citation: P. Parikh et al., Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications, IEEE MICR T, 46(12), 1998, pp. 2202-2207
Risultati: 1-14 |