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Results: 1-11 |
Results: 11
Electronic structure study of the dependence of the pseudogap on the icosahedral cluster size and the glue atoms (vol 80, pg 1681, 2000)
Authors: Modak, P Rao, RS Godwal, BK Chidambaram, R
Citation: P. Modak et al., Electronic structure study of the dependence of the pseudogap on the icosahedral cluster size and the glue atoms (vol 80, pg 1681, 2000), PHIL MAG B, 81(4), 2001, pp. 451-452
5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates
Authors: Modak, P D'Hondt, M Moerman, I Van Daele, P Mijlemans, P Demeester, P
Citation: P. Modak et al., 5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates, ELECTR LETT, 37(6), 2001, pp. 377-378
High-efficiency thin-film light-emitting diodes at 650 nm
Authors: Rooman, C Windisch, R D'Hondt, M Dutta, B Modak, P Mijlemans, P Borghs, G Vounckx, R Moerman, I Kuijk, M Heremans, P
Citation: C. Rooman et al., High-efficiency thin-film light-emitting diodes at 650 nm, ELECTR LETT, 37(13), 2001, pp. 852-853
Electronic structure study of the dependence of the pseudogap on the icosahedral cluster size and the glue atoms
Authors: Modak, P Rao, RS Godwal, BK Chidambaram, R
Citation: P. Modak et al., Electronic structure study of the dependence of the pseudogap on the icosahedral cluster size and the glue atoms, PHIL MAG B, 80(9), 2000, pp. 1681-1692
AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates
Authors: Modak, P D'Hondt, M Delbeke, D Moerman, I Van Daele, P Baets, R Demeester, P Mijlemans, P
Citation: P. Modak et al., AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates, IEEE PHOTON, 12(8), 2000, pp. 957-959
(Al)GaInP multiquantum well LEDs on GaAs and Ge
Authors: Modak, P D'Hondt, M Mijlemans, P Moerman, I Van Daele, P Demeester, P
Citation: P. Modak et al., (Al)GaInP multiquantum well LEDs on GaAs and Ge, J ELEC MAT, 29(1), 2000, pp. 80-85
InAlGaP microcavity LEDs on Ge-substrates
Authors: Modak, P Delbeke, D Moerman, I Baets, R Van Daele, P Demeester, P
Citation: P. Modak et al., InAlGaP microcavity LEDs on Ge-substrates, J CRYST GR, 221, 2000, pp. 668-673
Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodesat low temperatures
Authors: Hardikar, S Hudait, MK Modak, P Krupanidhi, SB Padha, N
Citation: S. Hardikar et al., Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodesat low temperatures, APPL PHYS A, 68(1), 1999, pp. 49-55
Si incorporation and Burstein-Moss shift in n-type GaAs
Authors: Hudait, MK Modak, P Krupanidhi, SB
Citation: Mk. Hudait et al., Si incorporation and Burstein-Moss shift in n-type GaAs, MAT SCI E B, 60(1), 1999, pp. 1-11
Stability of the pressure-induced orthorhombic phase of iron
Authors: Rao, RS Modak, P Godwal, BK Sikka, SK
Citation: Rs. Rao et al., Stability of the pressure-induced orthorhombic phase of iron, PHYS REV B, 59(21), 1999, pp. 13498-13500
Low temperature photoluminescence properties of Zn-doped GaAs
Authors: Hudait, MK Modak, P Rao, KSRK Krupanidhi, SB
Citation: Mk. Hudait et al., Low temperature photoluminescence properties of Zn-doped GaAs, MAT SCI E B, 57(1), 1998, pp. 62-70
Risultati: 1-11 |