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Results: 1-16 |
Results: 16
Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization
Authors: Pichon, L Mourgues, K Raoult, F Mohammed-Brahim, T Kis-Sion, K Briand, D Bonnaud, O
Citation: L. Pichon et al., Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization, SEMIC SCI T, 16(11), 2001, pp. 918-924
Transport mechanisms in hydrogenated microcrystalline silicon
Authors: Brenot, R Vanderhaghen, R Drevillon, B Cabarrocas, PRI Rogel, R Mohammed-Brahim, T
Citation: R. Brenot et al., Transport mechanisms in hydrogenated microcrystalline silicon, THIN SOL FI, 383(1-2), 2001, pp. 53-56
High mobility thin film transistors by Nd : YVO4-laser crystallization
Authors: Helen, Y Dassow, R Nerding, M Mourgues, K Raoult, F Kohler, JR Mohammed-Brahim, T Rogel, R Bonnaud, O Werner, JH Strunk, HP
Citation: Y. Helen et al., High mobility thin film transistors by Nd : YVO4-laser crystallization, THIN SOL FI, 383(1-2), 2001, pp. 143-146
Improved stability of large area excimer laser crystallised polysilicon thin film transistors under DC and AC operating
Authors: Toutah, H Llibre, JF Tala-Ighil, B Mohammed-Brahim, T Helen, Y Gautier, G Bonnaud, O
Citation: H. Toutah et al., Improved stability of large area excimer laser crystallised polysilicon thin film transistors under DC and AC operating, MICROEL REL, 41(9-10), 2001, pp. 1325-1329
Laser crystallization of silicon for high-performance thin-film transistors
Authors: Dassow, R Kohler, JR Helen, Y Mourgues, K Bonnaud, O Mohammed-Brahim, T Werner, JH
Citation: R. Dassow et al., Laser crystallization of silicon for high-performance thin-film transistors, SEMIC SCI T, 15(10), 2000, pp. L31-L34
Stability of polysilicon thin film transistors under switch operating
Authors: Toutah, H Llibre, JF Tala-Ighil, B Mohammed-Brahim, T Mourgues, K Helen, Y Raoult, F Bonnaud, O
Citation: H. Toutah et al., Stability of polysilicon thin film transistors under switch operating, MICROEL REL, 40(8-10), 2000, pp. 1573-1577
Density of states in the channel material of low temperature polycrystalline silicon thin film transistors
Authors: Mourgues, K Rahal, A Mohammed-Brahim, T Sarret, M Kleider, JP Longeaud, C Bachrouri, A Romano-Rodriguez, A
Citation: K. Mourgues et al., Density of states in the channel material of low temperature polycrystalline silicon thin film transistors, J NON-CRYST, 266, 2000, pp. 1279-1283
High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon
Authors: Rogel, R Sarret, M Mohammed-Brahim, T Bonnaud, O Kleider, JP
Citation: R. Rogel et al., High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon, J NON-CRYST, 266, 2000, pp. 141-145
Numerical simulation of low-field thermally stimulated conductivity in a-Si : H
Authors: Smail, T Aoucher, M Mohammed-Brahim, T
Citation: T. Smail et al., Numerical simulation of low-field thermally stimulated conductivity in a-Si : H, J NON-CRYST, 266, 2000, pp. 376-379
Analysis of the activation energy of the subthreshold current in laser- and solid-phase-crystallized polycrystalline silicon thin-film transistors
Authors: Pichon, L Mercha, A Carin, R Bonnaud, O Mohammed-Brahim, T Helen, Y Rogel, R
Citation: L. Pichon et al., Analysis of the activation energy of the subthreshold current in laser- and solid-phase-crystallized polycrystalline silicon thin-film transistors, APPL PHYS L, 77(4), 2000, pp. 576-578
Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering
Authors: Kechouane, M Beldi, N Mouheb, O Mohammed-Brahim, T Barriere, AS L'Haridon, H Gauneau, M
Citation: M. Kechouane et al., Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering, PHIL MAG B, 79(8), 1999, pp. 1205-1211
In situ doping of silicon deposited by LPCVD: pressure influence on dopantincorporation mechanisms
Authors: Briand, D Sarret, M Kis-Sion, K Mohammed-Brahim, T Duverneuil, P
Citation: D. Briand et al., In situ doping of silicon deposited by LPCVD: pressure influence on dopantincorporation mechanisms, SEMIC SCI T, 14(2), 1999, pp. 173-180
Contactless electronic transport analysis of microcrystalline silicon
Authors: Brenot, R Vanderhaghen, R Drevillon, B Mohammed-Brahim, T Cabarrocas, PR
Citation: R. Brenot et al., Contactless electronic transport analysis of microcrystalline silicon, THIN SOL FI, 337(1-2), 1999, pp. 63-66
State creation induced by gate bias stress in unhydrogenated polysilicon TFTs
Authors: Tala-Ighil, B Rahal, A Mourgues, K Toutah, A Pichon, L Mohammed-Brahim, T Raoult, F Bonnaud, O
Citation: B. Tala-ighil et al., State creation induced by gate bias stress in unhydrogenated polysilicon TFTs, THIN SOL FI, 337(1-2), 1999, pp. 101-104
Single shot excimer laser crystallization and LPCVD silicon TFTs
Authors: Helen, Y Mourgues, K Raoult, F Mohammed-Brahim, T Bonnaud, O Rogel, R Prochasson, S Boher, P Zahorski, D
Citation: Y. Helen et al., Single shot excimer laser crystallization and LPCVD silicon TFTs, THIN SOL FI, 337(1-2), 1999, pp. 133-136
Ageing of laser crystallized and unhydrogenated polysilicon thin film transistors
Authors: Rahal, A Mohammed-Brahim, T Toutah, H Tala-Ighil, B Helen, Y Prat, C Raoult, F
Citation: A. Rahal et al., Ageing of laser crystallized and unhydrogenated polysilicon thin film transistors, MICROEL REL, 39(6-7), 1999, pp. 851-855
Risultati: 1-16 |