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Results: 1-20 |
Results: 20
Paramagnetic defects in silicon carbide crystals irradiated with gamma-rayquanta
Authors: Ilyin, IV Mokhov, EN Baranov, PG
Citation: Iv. Ilyin et al., Paramagnetic defects in silicon carbide crystals irradiated with gamma-rayquanta, SEMICONDUCT, 35(12), 2001, pp. 1347-1354
Identification of iron in 6H-SiC crystals by electron paramagnetic resonance
Authors: Baranov, PG Ilyin, IV Mokhov, EN Khramtsov, VA
Citation: Pg. Baranov et al., Identification of iron in 6H-SiC crystals by electron paramagnetic resonance, SEMIC SCI T, 16(1), 2001, pp. 39-43
Electronic structure of the N donor center in 4H-SiC and 6H-SiC - art. no.085206
Authors: von Duijn-Arnold, A Zondervan, R Schmidt, J Baranov, PG Mokhov, EN
Citation: A. Von Duijn-arnold et al., Electronic structure of the N donor center in 4H-SiC and 6H-SiC - art. no.085206, PHYS REV B, 6408(8), 2001, pp. 5206
Properties of erbium luminescence in bulk crystals of silicon carbide
Authors: Babunts, RA Vetrov, VA Il'in, IV Mokhov, EN Romanov, NG Khramtsov, VA Baranov, PG
Citation: Ra. Babunts et al., Properties of erbium luminescence in bulk crystals of silicon carbide, PHYS SOL ST, 42(5), 2000, pp. 829-835
EPR spectra of the excited nitrogen state in 6H-SiC
Authors: Kalabukhova, EN Lukin, SN Mokhov, EN
Citation: En. Kalabukhova et al., EPR spectra of the excited nitrogen state in 6H-SiC, PHYS SOL ST, 42(5), 2000, pp. 841-845
Electron paramagnetic resonance of the scandium acceptor in 6H and 4H silicon carbide
Authors: Marz, M Greulich-Weber, S Spaeth, JM Mokhov, EN Kalabukhova, EN
Citation: M. Marz et al., Electron paramagnetic resonance of the scandium acceptor in 6H and 4H silicon carbide, SEMIC SCI T, 15(1), 2000, pp. 55-60
On mechanisms of sublimation growth of AlN bulk crystals
Authors: Segal, AS Karpov, SY Makarov, YN Mokhov, EN Roenkov, AD Ramm, MG Vodakov, YA
Citation: As. Segal et al., On mechanisms of sublimation growth of AlN bulk crystals, J CRYST GR, 211(1-4), 2000, pp. 68-72
Analysis of sublimation growth of bulk SiC crystals in tantalum container
Authors: Karpov, SY Kulik, AV Zhmakin, IA Makarov, YN Mokhov, EN Ramm, MG Ramm, MS Roenkov, AD Vodakov, YA
Citation: Sy. Karpov et al., Analysis of sublimation growth of bulk SiC crystals in tantalum container, J CRYST GR, 211(1-4), 2000, pp. 347-351
Growth of silicon carbide by sublimation sandwich method in the atmosphereof inert gas
Authors: Segal, AS Vorob'ev, AN Karpov, SY Mokhov, EN Ramm, MG Ramm, MS Roenkov, AD Vodakov, YA Makarov, YN
Citation: As. Segal et al., Growth of silicon carbide by sublimation sandwich method in the atmosphereof inert gas, J CRYST GR, 208(1-4), 2000, pp. 431-441
Progress in the growth and research of crystals for wide-gap semiconducting materials
Authors: Vodakov, YA Mokhov, EN
Citation: Ya. Vodakov et En. Mokhov, Progress in the growth and research of crystals for wide-gap semiconducting materials, PHYS SOL ST, 41(5), 1999, pp. 742-745
Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: recent EPR studies
Authors: Baranov, PG Il'in, IV Mokhov, EN Khramtsov, VA
Citation: Pg. Baranov et al., Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: recent EPR studies, PHYS SOL ST, 41(5), 1999, pp. 783-785
Erbium in silicon carbide crystals: EPR and high-temperature luminescence
Authors: Baranov, PG Ilyin, IV Mokhov, EN Pevtsov, AB Khramtsov, VA
Citation: Pg. Baranov et al., Erbium in silicon carbide crystals: EPR and high-temperature luminescence, PHYS SOL ST, 41(1), 1999, pp. 32-34
Transport phenomena in sublimation growth of SiC bulk crystals
Authors: Segal, AS Vorob'ev, AN Karpov, SY Makarov, YN Mokhov, EN Ramm, MG Ramm, MS Roenkov, AD Vodakov, YA Zhmakin, AI
Citation: As. Segal et al., Transport phenomena in sublimation growth of SiC bulk crystals, MAT SCI E B, 61-2, 1999, pp. 40-43
Optimization of sublimation growth of SiC bulk crystals using modeling
Authors: Ramm, MS Mokhov, EN Demina, SE Ramm, MG Roenkov, AD Vodakov, YA Segal, AS Vorob'ev, AN Karpov, SY Kulik, AV Makarov, YN
Citation: Ms. Ramm et al., Optimization of sublimation growth of SiC bulk crystals using modeling, MAT SCI E B, 61-2, 1999, pp. 107-112
Electron paramagnetic resonance of the scandium acceptor in 4H and 6H silicon carbide
Authors: Spaeth, JM Greulich-Weber, S Marz, M Mokhov, EN Kalabukhova, EN
Citation: Jm. Spaeth et al., Electron paramagnetic resonance of the scandium acceptor in 4H and 6H silicon carbide, PHYSICA B, 274, 1999, pp. 667-671
Electronic structure of the Be acceptor centers in 6H-SiC
Authors: van Duijn-Arnold, A Schmidt, J Poluektov, OG Baranov, PG Mokhov, EN
Citation: A. Van Duijn-arnold et al., Electronic structure of the Be acceptor centers in 6H-SiC, PHYS REV B, 60(23), 1999, pp. 15799-15809
Spatial distribution of the electronic wave function of the shallow boron acceptor in 4H- and 6H-SiC
Authors: van Duijn-Arnold, A Mol, J Verberk, R Schmidt, J Mokhov, EN Baranov, PG
Citation: A. Van Duijn-arnold et al., Spatial distribution of the electronic wave function of the shallow boron acceptor in 4H- and 6H-SiC, PHYS REV B, 60(23), 1999, pp. 15829-15847
Growth mechanism and polytypism of SiC epitaxial layers: Color cathodoluminescence-scanning electron microscope study
Authors: Mokhov, EN Saparin, GV Obyden, SK
Citation: En. Mokhov et al., Growth mechanism and polytypism of SiC epitaxial layers: Color cathodoluminescence-scanning electron microscope study, SCANNING, 21(2), 1999, pp. 160-161
Sublimation growth of AlN in vacuum and in a gas atmosphere
Authors: Karpov, SY Zimina, DV Makarov, YN Mokhov, EN Roenkov, AD Ramm, MG Vodakov, YA
Citation: Sy. Karpov et al., Sublimation growth of AlN in vacuum and in a gas atmosphere, PHYS ST S-A, 176(1), 1999, pp. 435-438
Study of luminescent centers annealing in wide bandgap semiconductors: Color cathodoluminescence-scanning electron microscopy
Authors: Mokhov, EN Roenkov, AD Saparin, GV Obyden, SK
Citation: En. Mokhov et al., Study of luminescent centers annealing in wide bandgap semiconductors: Color cathodoluminescence-scanning electron microscopy, SCANNING, 20(7), 1998, pp. 491-494
Risultati: 1-20 |