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Results: 1-13 |
Results: 13
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f(max)
Authors: Koester, SJ Hammond, R Chu, JO Mooney, PM Ott, JA Perraud, L Jenkins, KA Webster, CS Lagnado, I de la Houssaye, PR
Citation: Sj. Koester et al., SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f(max), IEEE ELEC D, 22(2), 2001, pp. 92-94
Scanning x-ray microtopographs of misfit dislocations at SiGe/Si interfaces
Authors: Mooney, PM Jordan-Sweet, JL Christiansen, SH
Citation: Pm. Mooney et al., Scanning x-ray microtopographs of misfit dislocations at SiGe/Si interfaces, APPL PHYS L, 79(15), 2001, pp. 2363-2365
Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
Authors: Koester, SJ Rim, K Chu, JO Mooney, PM Ott, JA Hargrove, MA
Citation: Sj. Koester et al., Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy, APPL PHYS L, 79(14), 2001, pp. 2148-2150
SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition
Authors: Mooney, PM Chu, JO Ott, JA
Citation: Pm. Mooney et al., SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition, J ELEC MAT, 29(7), 2000, pp. 921-927
SiGe technology: Heteroepitaxy and high-speed microelectronics
Authors: Mooney, PM Chu, JO
Citation: Pm. Mooney et Jo. Chu, SiGe technology: Heteroepitaxy and high-speed microelectronics, ANN R MATER, 30, 2000, pp. 335-362
Grazing incidence reciprocal space mapping of partially relaxed SiGe films
Authors: Mooney, PM
Citation: Pm. Mooney, Grazing incidence reciprocal space mapping of partially relaxed SiGe films, J MAT S-M E, 10(3), 1999, pp. 209-213
Images of local tilted regions in strain-relaxed SiGe layers
Authors: Mooney, PM Jordan-Sweet, JL Noyan, IC Kaldor, SK Wang, PC
Citation: Pm. Mooney et al., Images of local tilted regions in strain-relaxed SiGe layers, PHYSICA B, 274, 1999, pp. 608-611
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
Authors: Mathew, SJ Niu, GF Dubbelday, WB Cressler, JD Ott, JA Chu, JO Mooney, PM Kavanagh, KL Meyerson, BS Lagnado, I
Citation: Sj. Mathew et al., Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire, IEEE ELEC D, 20(4), 1999, pp. 173-175
Quantum indistinguishability effects of confined polyexcitons
Authors: Shum, K Mooney, PM Chu, JO
Citation: K. Shum et al., Quantum indistinguishability effects of confined polyexcitons, PHYS REV B, 60(8), 1999, pp. 5786-5790
Defect identification using capacitance spectroscopy
Authors: Mooney, PM
Citation: Pm. Mooney, Defect identification using capacitance spectroscopy, SEM SEMIMET, 51, 1999, pp. 93-152
Characterization of the silicon on insulator film in bonded wafers by highresolution x-ray diffraction
Authors: Cohen, GM Mooney, PM Jones, EC Chan, KK Solomon, PM Wong, HSP
Citation: Gm. Cohen et al., Characterization of the silicon on insulator film in bonded wafers by highresolution x-ray diffraction, APPL PHYS L, 75(6), 1999, pp. 787-789
Observation of local tilted regions in strain-relaxed SiGe/Si buffer layers using x-ray microdiffraction
Authors: Mooney, PM Jordan-Sweet, JL Noyan, IC Kaldor, SK Wang, PC
Citation: Pm. Mooney et al., Observation of local tilted regions in strain-relaxed SiGe/Si buffer layers using x-ray microdiffraction, APPL PHYS L, 74(5), 1999, pp. 726-728
Ligand replacement reactions of ferrous phthalocyanine in dimethylsulphoxide: confirmation that both steps can be observed
Authors: Jones, JG Farrington, DJ McDonald, FM Mooney, PM Twigg, MV
Citation: Jg. Jones et al., Ligand replacement reactions of ferrous phthalocyanine in dimethylsulphoxide: confirmation that both steps can be observed, TRANSIT MET, 23(6), 1998, pp. 693-699
Risultati: 1-13 |