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Results: 1-10 |
Results: 10
Electronic, spectroscopic and elastic properties of early transition metalcompounds
Authors: Pollini, I Mosser, A Parlebas, JC
Citation: I. Pollini et al., Electronic, spectroscopic and elastic properties of early transition metalcompounds, PHYS REPORT, 355(1), 2001, pp. 1-72
Effect of implanted phosphorus on silicide formation in the Cr/Si(111) system
Authors: Benouattas, N Halimi, R Bouabellou, A Mosser, A
Citation: N. Benouattas et al., Effect of implanted phosphorus on silicide formation in the Cr/Si(111) system, THIN SOL FI, 385(1-2), 2001, pp. 61-65
Silicidation in chromium-amorphous silicon multilayer films
Authors: Bouabellou, A Halimi, R Mirouh, K Labbani, R Djebien, R Mosser, A
Citation: A. Bouabellou et al., Silicidation in chromium-amorphous silicon multilayer films, THIN SOL FI, 383(1-2), 2001, pp. 296-298
Cross-sectional TEM investigations of the influence of P+ ions implanted in the Si substrate on the atomic interdiffusion in the Cr-Si system
Authors: Mirouh, K Bouabellou, A Halimi, R Mosser, A Ehret, G Werckman, J
Citation: K. Mirouh et al., Cross-sectional TEM investigations of the influence of P+ ions implanted in the Si substrate on the atomic interdiffusion in the Cr-Si system, MAT SCI E B, 73(1-3), 2000, pp. 116-119
Etching effect on the texture and the stress of copper layers evaporated on Si(100)
Authors: Benouattas, N Mosser, A Bouabellou, A
Citation: N. Benouattas et al., Etching effect on the texture and the stress of copper layers evaporated on Si(100), MAT SCI E A, 288(2), 2000, pp. 253-256
Electronic changes induced by vacancies on spectral and elastic propertiesof titanium carbides and nitrides
Authors: Guemmaz, M Mosser, A Parlebas, JC
Citation: M. Guemmaz et al., Electronic changes induced by vacancies on spectral and elastic propertiesof titanium carbides and nitrides, J ELEC SPEC, 107(1), 2000, pp. 91-101
Behaviour of copper atoms in annealed Cu/SiOx/Si systems
Authors: Benouattas, N Mosser, A Raiser, D Faerber, J Bouabellou, A
Citation: N. Benouattas et al., Behaviour of copper atoms in annealed Cu/SiOx/Si systems, APPL SURF S, 153(2-3), 2000, pp. 79-84
Polymorphism in intron 4 of HFE does not compromise haemochromatosis mutation results
Authors: Merryweather-Clarke, AT Pointon, JJ Shearman, JD Robson, KJH Jouanolle, AM Mosser, A David, V Le Gall, JY Halsall, DJ Elsey, TS Kelly, A Cox, TM Clare, M Bomford, A Vandwalle, JL Rochette, J Borot, N Coppin, H Roth, MP Ryan, E Crowe, J Totaro, A Gasparini, P Roetto, A Gamaschella, C Darke, C Wallace, DF Saeb-Parsy, K Dooley, JS Worwood, M Walker, AP
Citation: At. Merryweather-clarke et al., Polymorphism in intron 4 of HFE does not compromise haemochromatosis mutation results, NAT GENET, 23(3), 1999, pp. 271-271
Electrical properties of Cr/Si(p) structures
Authors: Benouattas, N Tamaarat, B Bouabellou, A Halimi, R Mosser, A
Citation: N. Benouattas et al., Electrical properties of Cr/Si(p) structures, SOL ST ELEC, 43(2), 1999, pp. 439-446
Elastic properties of sub-stoichiometric titanium carbides - Comparison ofFP-LMTO calculations and experimental results
Authors: Guemmaz, M Mosser, A Ahujab, R Johansson, B
Citation: M. Guemmaz et al., Elastic properties of sub-stoichiometric titanium carbides - Comparison ofFP-LMTO calculations and experimental results, SOL ST COMM, 110(6), 1999, pp. 299-303
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