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Results:
1-18
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Results: 18
Authors:
An, HY
Motohisa, J
Fukui, T
Citation: Hy. An et al., Optical anisotropy in InAs quantum dots formed on GaAs pyramids, JPN J A P 1, 40(4A), 2001, pp. 2312-2316
Authors:
Lee, S
Akabori, M
Shirahata, T
Takada, K
Motohisa, J
Fukui, T
Citation: S. Lee et al., The initial stage of InGaAs growth by MOVPE on multiatomic-stepped GaAs structures, J CRYST GR, 231(1-2), 2001, pp. 75-81
Authors:
Terasawa, T
Nakajima, F
Motohisa, J
Fukui, T
Citation: T. Terasawa et al., Lateral thickness modulation of InGaAs layers on GaAs in selective area metalorganic vapor phase epitaxy, J CRYST GR, 223(4), 2001, pp. 523-527
Authors:
Nakajima, F
Ogasawara, Y
Motohisa, J
Fukui, T
Citation: F. Nakajima et al., GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices, J APPL PHYS, 90(5), 2001, pp. 2606-2611
Authors:
Harada, T
Oda, Y
Motohisa, J
Fukui, T
Citation: T. Harada et al., Novel nano-faceting structures grown on patterned vicinal (110) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE), JPN J A P 1, 39(12B), 2000, pp. 7090-7092
Authors:
Motohisa, J
Tazaki, C
Irisawa, T
Akabori, M
Fukui, T
Citation: J. Motohisa et al., Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces, J ELEC MAT, 29(1), 2000, pp. 140-145
Authors:
Nakajima, F
Motohisa, J
Fukui, T
Citation: F. Nakajima et al., Self-formed quantum nano-structures by selective area MOVPE and their application to GaAs single electron devices, APPL SURF S, 162, 2000, pp. 650-654
Authors:
Motohisa, J
Tazaki, C
Akabori, M
Fukui, T
Citation: J. Motohisa et al., Incorporation mechanism of Si during delta-doping in GaAs singular and vicinal surfaces, J CRYST GR, 221, 2000, pp. 47-52
Authors:
Hahn, CK
Motohisa, J
Fukui, T
Citation: Ck. Hahn et al., Position and number control of self-assembled InAs quantum dots by selective area metalorganic vapor-phase epitaxy, J CRYST GR, 221, 2000, pp. 599-604
Authors:
Ogawa, T
Akabori, M
Motohisa, J
Fukui, T
Citation: T. Ogawa et al., Effect of growth interruption time and growth temperature on the natural formation of InGaAs/AlGaAs quantum disk structures on GaAs (311)B substrates, J APPL PHYS, 87(2), 2000, pp. 745-749
Authors:
An, HY
Motohisa, J
Citation: Hy. An et J. Motohisa, Optical properties of InAs quantum dots formed on GaAs pyramids, APPL PHYS L, 77(3), 2000, pp. 385-387
Authors:
Hahn, CK
Motohisa, J
Fukui, T
Citation: Ck. Hahn et al., Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy, APPL PHYS L, 76(26), 2000, pp. 3947-3949
Authors:
Ogawa, T
Akabori, M
Motohisa, J
Fukui, T
Citation: T. Ogawa et al., Real-time observation of electron-beam induced mass transport in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates, JPN J A P 1, 38(2B), 1999, pp. 1040-1043
Authors:
Nakajima, F
Kumakura, K
Motohisa, J
Fukui, T
Citation: F. Nakajima et al., GaAs single electron transistors fabricated by selective area metalorganicvapor phase epitaxy and their application to single electron logic circuits, JPN J A P 1, 38(1B), 1999, pp. 415-417
Authors:
Ogawa, T
Akabori, M
Motohisa, J
Fukui, T
Citation: T. Ogawa et al., Surface deformation phenomena induced by electron-beam irradiation in strained InGaAs/AlGaAs layers on GaAs (100) and (311)B substrates, PHYSICA B, 270(3-4), 1999, pp. 313-317
Authors:
Fukui, T
Nakajima, F
Kumakura, K
Motohisa, J
Citation: T. Fukui et al., Quantum dots fabricated by selective area MOVPE and their application to single electron devices, B MATER SCI, 22(3), 1999, pp. 531-535
Authors:
Ogawa, T
Akabori, M
Motohisa, J
Fukui, T
Citation: T. Ogawa et al., Self organization in InGaAs AlGaAs quantum disk structures on GaAs (311)B substrates, MICROEL ENG, 47(1-4), 1999, pp. 231-233
Authors:
Akabori, M
Motohisa, J
Fukui, T
Citation: M. Akabori et al., Formation and characterization of modulated two-dimensional electron gas on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 579-585
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1-18
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