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Results: 1-10 |
Results: 10
Low-temperature photoluminescence characterization of hydrogen- and helium-implanted silicon
Authors: Ulyashin, AG Job, R Fahrner, WR Mudryi, AV Patuk, AI Shakin, IA
Citation: Ag. Ulyashin et al., Low-temperature photoluminescence characterization of hydrogen- and helium-implanted silicon, MAT SC S PR, 4(1-3), 2001, pp. 297-299
Laser deposition and study of CuInS2xSe2(1-x) crystals and films
Authors: Zaretskaya, EP Victorov, IA Gremenok, VF Mudryi, AV
Citation: Ep. Zaretskaya et al., Laser deposition and study of CuInS2xSe2(1-x) crystals and films, TECH PHYS L, 27(1), 2001, pp. 49-51
Spectral luminescence properties of nanostructured Ce-Nd-containing silicagel-glasses
Authors: Malashkevich, GE Semkova, GI Gaishun, VE Mudryi, AV
Citation: Ge. Malashkevich et al., Spectral luminescence properties of nanostructured Ce-Nd-containing silicagel-glasses, JETP LETTER, 74(7), 2001, pp. 388-391
Optical and structural characterization of erbium-doped TiO2 xerogel filmsprocessed on porous anodic alumina
Authors: Gaponenko, NV Sergeev, OV Stepanova, EA Parkun, VM Mudryi, AV Gnaser, H Misiewicz, J Heiderhoff, R Balk, LJ Thompson, GE
Citation: Nv. Gaponenko et al., Optical and structural characterization of erbium-doped TiO2 xerogel filmsprocessed on porous anodic alumina, J ELCHEM SO, 148(2), 2001, pp. H13-H16
Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emissionwavelength in the spectral range of 450-470 nm
Authors: Yablonskii, GP Lutsenko, EV Pavlovskii, VN Marko, IP Gurskii, AL Zubialevich, VZ Mudryi, AV Schon, O Protzmann, H Lunenburger, M Schineller, B Heuken, M Kalisch, H Heime, K
Citation: Gp. Yablonskii et al., Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emissionwavelength in the spectral range of 450-470 nm, APPL PHYS L, 79(13), 2001, pp. 1953-1955
Optical spectroscopy of excitonic states in CuInSe2
Authors: Mudryi, AV Yakushev, MV Tomlinson, RD Hill, AE Pilkington, RD Bodnar', IV Viktorov, IA Gremenok, VF Shakin, IA Patuk, AI
Citation: Av. Mudryi et al., Optical spectroscopy of excitonic states in CuInSe2, SEMICONDUCT, 34(5), 2000, pp. 534-537
Photoluminescence of Er-implanted silica, polysiloxane and porous silicon films
Authors: Pivin, JC Gaponenko, NV Mudryi, AV Shushunova, VV Hamilton, B
Citation: Jc. Pivin et al., Photoluminescence of Er-implanted silica, polysiloxane and porous silicon films, MAT SCI E B, 69, 2000, pp. 215-218
Stimulated emission, electro- and photoluminescence of InGaN/GaN EL-test and SQW heterostructures grown by MOVPE
Authors: Yablonskii, GP Lutsenko, EV Marko, IP Pavlovskii, VN Mudryi, AV Stognij, AI Schon, O Protzmann, H Lunenburger, M Schineller, B Heuken, M Heime, K
Citation: Gp. Yablonskii et al., Stimulated emission, electro- and photoluminescence of InGaN/GaN EL-test and SQW heterostructures grown by MOVPE, PHYS ST S-A, 180(1), 2000, pp. 149-155
On the origin of 1.5 mu m luminescence in porous silicon coated with sol-gel derived erbium-doped Fe2O3 films
Authors: Gaponenko, NV Mudryi, AV Sergeev, OV Stepikhova, M Palmetshofer, L Jantsch, W Pivin, JC Hamilton, B Baran, AS Rat'ko, AI
Citation: Nv. Gaponenko et al., On the origin of 1.5 mu m luminescence in porous silicon coated with sol-gel derived erbium-doped Fe2O3 films, J LUMINESC, 80(1-4), 1998, pp. 399-403
Luminescence of heteroepitaxial silicon films on sapphire
Authors: Korshunov, FP Mudryi, AV Patuk, AI Shakin, IA
Citation: Fp. Korshunov et al., Luminescence of heteroepitaxial silicon films on sapphire, DAN BELARUS, 42(4), 1998, pp. 70-73
Risultati: 1-10 |