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Results: 1-15 |
Results: 15
Allergic contact urticaria from raw potato
Authors: Torrijos, EG Galindo, PA Borja, J Feo, F Rodriguez, RG Mur, P
Citation: Eg. Torrijos et al., Allergic contact urticaria from raw potato, J INVES ALL, 11(2), 2001, pp. 129-129
Ultra-thin oxides grown on silicon (100) by rapid thermal oxidation for CMOS and advanced devices
Authors: Mur, P Semeria, MN Olivier, M Papon, AM Leroux, C Reimbold, G Gentile, P Magnea, N Baron, T Clerc, R Ghibaudo, G
Citation: P. Mur et al., Ultra-thin oxides grown on silicon (100) by rapid thermal oxidation for CMOS and advanced devices, APPL SURF S, 175, 2001, pp. 726-733
Allergy to linden pollen (Tilia cordata)
Authors: Mur, P Brito, FF Lombardero, M Barber, D Galindo, PA Gomez, E Borja, J
Citation: P. Mur et al., Allergy to linden pollen (Tilia cordata), ALLERGY, 56(5), 2001, pp. 457-458
Rhinoconjunctivitis and occupational asthma caused by Diplotaxis erucoides(wall rocket)
Authors: Brito, FF Mur, P Bartolome, B Galindo, PA Gomez, E Borja, J Martinez, A
Citation: Ff. Brito et al., Rhinoconjunctivitis and occupational asthma caused by Diplotaxis erucoides(wall rocket), J ALLERG CL, 108(1), 2001, pp. 125-127
Single-electron charging effect in individual Si nanocrystals
Authors: Baron, T Gentile, P Magnea, N Mur, P
Citation: T. Baron et al., Single-electron charging effect in individual Si nanocrystals, APPL PHYS L, 79(8), 2001, pp. 1175-1177
Ultimate sub-25 nm gate length NMOSPETs transport at 293 and 77 K
Authors: Bertrand, G Deleonibus, S Souil, D Caillat, C Guegan, G Tedesco, S Heitzmann, M Mur, P Balestra, F
Citation: G. Bertrand et al., Ultimate sub-25 nm gate length NMOSPETs transport at 293 and 77 K, SUPERLATT M, 28(5-6), 2000, pp. 435-444
A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets
Authors: Deleonibus, S Caillat, C Guegan, G Heitzmann, M Nier, ME Tedesco, S Dal'zotto, B Martin, F Mur, P Papon, AM Lecarval, G Biswas, S Souil, D
Citation: S. Deleonibus et al., A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets, IEEE ELEC D, 21(4), 2000, pp. 173-175
A 20-nm physical gate length NMOSFET featuring 1.2-nm gate oxide, shallow implanted source and drain and BF2 pockets (vol 21, pg 173, 2000)
Authors: Deleonibus, S Caillat, C Guegan, G Heitzmann, M Nier, ME Tedesco, SR Dal'zotto, B Martin, F Mur, P Papon, AM Lecarval, G Biswas, S
Citation: S. Deleonibus et al., A 20-nm physical gate length NMOSFET featuring 1.2-nm gate oxide, shallow implanted source and drain and BF2 pockets (vol 21, pg 173, 2000), IEEE ELEC D, 21(12), 2000, pp. 616-616
Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices
Authors: Baron, T Martin, F Mur, P Wyon, C Dupuy, M Busseret, C Souifi, A Guillot, G
Citation: T. Baron et al., Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices, APPL SURF S, 164, 2000, pp. 29-34
Fabrication of single electron devices by hybrid (E-beam/DUV) lithography
Authors: Palun, L Tedesco, S Heitzman, M Martin, F Fraboulet, D Dal'zotto, B Nier, ME Mur, P Charvolin, T Mariolle, D Tardif, F
Citation: L. Palun et al., Fabrication of single electron devices by hybrid (E-beam/DUV) lithography, MICROEL ENG, 53(1-4), 2000, pp. 167-170
Immunosenescence: Delayed cutaneous hypersensitivity test in free living Chilean elderly individuals (vol 128, pg 379, 2000)
Authors: Blackburn, E Mur, P Jofre, B Coll, C Jurlow, E
Citation: E. Blackburn et al., Immunosenescence: Delayed cutaneous hypersensitivity test in free living Chilean elderly individuals (vol 128, pg 379, 2000), REV MED CHI, 128(7), 2000, pp. 818-818
Immunosenescence: Delayed cutaneous hypersensitivity test in free living Chilean elderly individuals
Authors: Blackburn, E Mur, P Jofre, B Coll, C Jurlow, E
Citation: E. Blackburn et al., Immunosenescence: Delayed cutaneous hypersensitivity test in free living Chilean elderly individuals, REV MED CHI, 128(4), 2000, pp. 379-386
Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices
Authors: Baron, T Martin, F Mur, P Wyon, C Dupuy, M
Citation: T. Baron et al., Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices, J CRYST GR, 209(4), 2000, pp. 1004-1008
Patterns of immunoglobulin E sensitization to chironomids in exposed and unexposed subjects
Authors: Galindo, PA Lombardero, N Mur, P Feo, F Gomez, E Borja, J Garcia, R Barber, D
Citation: Pa. Galindo et al., Patterns of immunoglobulin E sensitization to chironomids in exposed and unexposed subjects, J INVES ALL, 9(2), 1999, pp. 117-122
Rhinoconjunctivitis and asthma caused by vine pollen: A case report
Authors: Brito, FF Martinez, A Palacios, R Mur, P Gomez, E Galindo, PA Borja, J Martinez, J
Citation: Ff. Brito et al., Rhinoconjunctivitis and asthma caused by vine pollen: A case report, J ALLERG CL, 103(2), 1999, pp. 262-266
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