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Results: 1-12 |
Results: 12
The effect of high energy electrons during the growth of ZnSe and ZnMgSe by molecular beam epitaxy
Authors: Vanmil, BL Ptak, AJ Giles, NC Myers, TH Treado, PJ Nelson, MP Ribar, JM Smith, RD
Citation: Bl. Vanmil et al., The effect of high energy electrons during the growth of ZnSe and ZnMgSe by molecular beam epitaxy, J ELEC MAT, 30(6), 2001, pp. 785-788
Predicted lattice relaxation around point defects in zinc selenide - art. no. 035206
Authors: Muratov, L Little, S Yang, YX Cooper, BR Myers, TH Wills, JM
Citation: L. Muratov et al., Predicted lattice relaxation around point defects in zinc selenide - art. no. 035206, PHYS REV B, 6403(3), 2001, pp. 5206
Defect segregation in CdGeAs2
Authors: Schunemann, PG Setzler, SD Pollak, TM Ptak, AJ Myers, TH
Citation: Pg. Schunemann et al., Defect segregation in CdGeAs2, J CRYST GR, 225(2-4), 2001, pp. 440-444
Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy
Authors: Ptak, AJ Holbert, LJ Ting, L Swartz, CH Moldovan, M Giles, NC Myers, TH Van Lierde, P Tian, C Hockett, RA Mitha, S Wickenden, AE Koleske, DD Henry, RL
Citation: Aj. Ptak et al., Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy, APPL PHYS L, 79(17), 2001, pp. 2740-2742
Magnesium incorporation in GaN grown by molecular-beam epitaxy
Authors: Ptak, AJ Myers, TH Romano, LT Van de Walle, CG Northrup, JE
Citation: Aj. Ptak et al., Magnesium incorporation in GaN grown by molecular-beam epitaxy, APPL PHYS L, 78(3), 2001, pp. 285-287
Formation of BN and AlBN during nitridation of sapphire using RF plasma sources
Authors: Ptak, AJ Ziemer, KS Holbert, LJ Stinespring, CD Myers, TH
Citation: Aj. Ptak et al., Formation of BN and AlBN during nitridation of sapphire using RF plasma sources, MRS I J N S, 5, 2000, pp. NIL_173-NIL_178
An investigation of long and short time-constant persistent photoconductivity in undoped GaN grown by rf-plasma assisted molecular beam epitaxy
Authors: Ptak, AJ Stoica, VA Holbert, LJ Moldovan, M Myers, TH
Citation: Aj. Ptak et al., An investigation of long and short time-constant persistent photoconductivity in undoped GaN grown by rf-plasma assisted molecular beam epitaxy, MRS I J N S, 5, 2000, pp. NIL_629-NIL_634
Point defect modification in wide band gap semiconductors through interaction with high-energy electrons: Is reflection high-energy electron diffraction truly benign?
Authors: Myers, TH Ptak, AJ VanMil, BL Moldovan, M Treado, PJ Nelson, MP Ribar, JM Zugates, CT
Citation: Th. Myers et al., Point defect modification in wide band gap semiconductors through interaction with high-energy electrons: Is reflection high-energy electron diffraction truly benign?, J VAC SCI B, 18(4), 2000, pp. 2295-2299
Faceted inversion domain boundary in GaN films doped with Mg
Authors: Romano, LT Northrup, JE Ptak, AJ Myers, TH
Citation: Lt. Romano et al., Faceted inversion domain boundary in GaN films doped with Mg, APPL PHYS L, 77(16), 2000, pp. 2479-2481
Influence of active nitrogen species on high temperature limitations for (000(1)under-bar) GaN growth by rf plasma-assisted molecular beam epitaxy
Authors: Myers, TH Millecchia, MR Ptak, AJ Ziemer, KS Stinespring, CD
Citation: Th. Myers et al., Influence of active nitrogen species on high temperature limitations for (000(1)under-bar) GaN growth by rf plasma-assisted molecular beam epitaxy, J VAC SCI B, 17(4), 1999, pp. 1654-1658
X-ray photoelectron spectroscopy study of oxide and Te overlayers on As-grown and etched HgCdTe
Authors: Hirsch, LS Haakenaasen, R Colin, T Ziemer, KS Stinespring, CD Lovold, S Myers, TH
Citation: Ls. Hirsch et al., X-ray photoelectron spectroscopy study of oxide and Te overlayers on As-grown and etched HgCdTe, J ELEC MAT, 28(6), 1999, pp. 810-816
The relation of active nitrogen species to high-temperature limitations for (000(1)over-bar) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy
Authors: Ptak, AJ Millecchia, MR Myers, TH Ziemer, KS Stinespring, CD
Citation: Aj. Ptak et al., The relation of active nitrogen species to high-temperature limitations for (000(1)over-bar) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy, APPL PHYS L, 74(25), 1999, pp. 3836-3838
Risultati: 1-12 |