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Results: 1-12 |
Results: 12
TRAPPED CHARGE-DISTRIBUTIONS IN THIN (10 NM) SIO2-FILMS SUBJECTED TO STATIC AND DYNAMIC STRESSES
Authors: RODRIGUEZ R NAFRIA M SUNE J AYMERICH X
Citation: R. Rodriguez et al., TRAPPED CHARGE-DISTRIBUTIONS IN THIN (10 NM) SIO2-FILMS SUBJECTED TO STATIC AND DYNAMIC STRESSES, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 881-888
SOFT BREAKDOWN FLUCTUATION EVENTS IN ULTRATHIN SIO2 LAYERS
Authors: MIRANDA E SUNE J RODRIGUEZ R NAFRIA M AYMERICH X
Citation: E. Miranda et al., SOFT BREAKDOWN FLUCTUATION EVENTS IN ULTRATHIN SIO2 LAYERS, Applied physics letters, 73(4), 1998, pp. 490-492
MODEL FOR HYDROGEN DESORPTION IN SIGE(100) FILMS
Authors: VIZOSO J MARTIN F SUNE J NAFRIA M
Citation: J. Vizoso et al., MODEL FOR HYDROGEN DESORPTION IN SIGE(100) FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2693-2697
ANALYSIS OF THE EVOLUTION OF THE TRAPPED CHARGE-DISTRIBUTIONS IN 10NMSIO2-FILMS DURING DC AND BIPOLAR DYNAMIC STRESS
Authors: RODRIGUEZ R NAFRIA M SUNE J AYMERICH X
Citation: R. Rodriguez et al., ANALYSIS OF THE EVOLUTION OF THE TRAPPED CHARGE-DISTRIBUTIONS IN 10NMSIO2-FILMS DURING DC AND BIPOLAR DYNAMIC STRESS, Microelectronics and reliability, 37(10-11), 1997, pp. 1517-1520
HYDROGEN DESORPTION IN SIGE FILMS - A DIFFUSION-LIMITED PROCESS
Authors: VIZOSO J MARTIN F SUNE J NAFRIA M
Citation: J. Vizoso et al., HYDROGEN DESORPTION IN SIGE FILMS - A DIFFUSION-LIMITED PROCESS, Applied physics letters, 70(24), 1997, pp. 3287-3289
BREAKDOWN OF THIN GATE SILICON DIOXIDE FILMS - A REVIEW
Authors: NAFRIA M SUNE J AYMERICH X
Citation: M. Nafria et al., BREAKDOWN OF THIN GATE SILICON DIOXIDE FILMS - A REVIEW, Microelectronics and reliability, 36(7-8), 1996, pp. 871-905
DEGRADATION AND BREAKDOWN OF THIN SILICON DIOXIDE FILMS UNDER DYNAMICELECTRICAL STRESS
Authors: NAFRIA M SUNE J YELAMOS D AYMERICH X
Citation: M. Nafria et al., DEGRADATION AND BREAKDOWN OF THIN SILICON DIOXIDE FILMS UNDER DYNAMICELECTRICAL STRESS, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2215-2226
FREQUENCY-DEPENDENCE OF DEGRADATION AND BREAKDOWN OF THIN SIO2-FILMS
Authors: NAFRIA M YELAMOS D SUNE J AYMERICH X
Citation: M. Nafria et al., FREQUENCY-DEPENDENCE OF DEGRADATION AND BREAKDOWN OF THIN SIO2-FILMS, Quality and reliability engineering international, 11(4), 1995, pp. 257-261
RELATION BETWEEN DEGRADATION AND BREAKDOWN OF THIN SIO2-FILMS UNDER AC STRESS CONDITIONS
Authors: NAFRIA M YELAMOS D SUNE J AYMERICH X
Citation: M. Nafria et al., RELATION BETWEEN DEGRADATION AND BREAKDOWN OF THIN SIO2-FILMS UNDER AC STRESS CONDITIONS, Microelectronic engineering, 28(1-4), 1995, pp. 321-324
HIGH-FIELD DYNAMIC STRESS OF THIN SIO2-FILMS
Authors: NAFRIA M SUNE J YELAMOS D AYMERICH X
Citation: M. Nafria et al., HIGH-FIELD DYNAMIC STRESS OF THIN SIO2-FILMS, Microelectronics and reliability, 35(3), 1995, pp. 539-553
REVERSIBLE DIELECTRIC-BREAKDOWN OF THIN GATE OXIDES IN MOS DEVICES
Authors: SUNE J NAFRIA M AYMERICH X
Citation: J. Sune et al., REVERSIBLE DIELECTRIC-BREAKDOWN OF THIN GATE OXIDES IN MOS DEVICES, Microelectronics and reliability, 33(7), 1993, pp. 1031-1039
CHARACTERIZATION OF SIO2 DIELECTRIC-BREAKDOWN FOR RELIABILITY SIMULATION
Authors: NAFRIA M SUNE J AYMERICH X
Citation: M. Nafria et al., CHARACTERIZATION OF SIO2 DIELECTRIC-BREAKDOWN FOR RELIABILITY SIMULATION, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1662-1668
Risultati: 1-12 |