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Results:
1-9
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Results: 9
Authors:
KASUKAWA A
NAMEGAYA T
IWAI N
YAMANAKA N
IKEGAMI Y
TSUKIJI N
Citation: A. Kasukawa et al., EXTREMELY HIGH-POWER 1.48 MU-M GAINASP INP GRIN-SCH STRAINED MQW LASERS/, IEEE photonics technology letters, 6(1), 1994, pp. 4-6
Authors:
FUKUSHIMA T
MATSUMOTO N
NAKAYAMA H
IKEGAMI Y
NAMEGAYA T
KASUKAWA A
SHIBATA M
Citation: T. Fukushima et al., STRAINED GAINASP INP MULTIPLE-QUANTUM-WELL LASERS FOR WIDE-BAND ANALOG AND HIGH-SPEED DIGITAL FIBEROPTIC NETWORKS/, Microwave and optical technology letters, 7(3), 1994, pp. 152-159
Authors:
FUKUSHIMA T
NAMEGAYA T
IKEGAMI Y
NAKAYAMA H
MATSUMOTO N
KASUKAWA A
SHIBATA M
Citation: T. Fukushima et al., CARRIER TRANSPORT AND ITS EFFECT ON THE TURN-ON DELAY-TIME IN STRAINED GAINASP INP MULTIPLE-QUANTUM-WELL LASERS/, Optical and quantum electronics, 26(7), 1994, pp. 843-855
Authors:
NAMEGAYA T
MATSUMOTO N
YAMANAKA N
IWAI N
NAKAYAMA H
KASUKAWA A
Citation: T. Namegaya et al., EFFECTS OF WELL NUMBER IN 1.3-MU-M GAINASP INP GRIN-SCH STRAINED-LAYER QUANTUM-WELL LASERS/, IEEE journal of quantum electronics, 30(2), 1994, pp. 578-584
Authors:
FUKUSHIMA T
MATSUMOTO N
NAKAYAMA H
IKEGAMI Y
NAMEGAYA T
KASUKAWA A
SHIBATA M
Citation: T. Fukushima et al., WIDE-BAND AND HIGH-POWER COMPRESSIVELY STRAINED GAINASP INP MULTIPLE-QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS EMITTING AT 1.3-MU-M/, IEEE photonics technology letters, 5(9), 1993, pp. 963-965
Authors:
KASUKAWA A
NAMEGAYA T
FUKUSHIMA T
IWAI N
KIKUTA T
Citation: A. Kasukawa et al., 1.3-MU-M INASYP1-Y-INP STRAINED-LAYER QUANTUM-WELL LASER-DIODES GROWNBY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, IEEE journal of quantum electronics, 29(6), 1993, pp. 1528-1535
Authors:
FUKUSHIMA T
KASUKAWA A
IWASE M
NAMEGAYA T
SHIBATA M
Citation: T. Fukushima et al., COMPRESSIVELY STRAINED 1.3-MU-M INASP INP AND GAINASP/INP MULTIPLE-QUANTUM-WELL LASERS FOR HIGH-SPEED PARALLEL DATA-TRANSMISSION SYSTEMS/, IEEE journal of quantum electronics, 29(6), 1993, pp. 1536-1543
Authors:
NAMEGAYA T
KATSUMI R
IWAI N
NAMIKI S
KASUKAWA A
HIRATANI Y
KIKUTA T
Citation: T. Namegaya et al., 1.48-MU-M HIGH-POWER GAINASP-INP GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE MULTIPLE-QUANTUM-WELL LASER-DIODES, IEEE journal of quantum electronics, 29(6), 1993, pp. 1924-1931
Authors:
NAMEGAYA T
KASUKAWA A
IWAI N
KIKUTA T
Citation: T. Namegaya et al., HIGH-TEMPERATURE OPERATION OF 1.3 MU-M GAINASP INP GRINSCH STRAINED-LAYER QUANTUM-WELL LASERS/, Electronics Letters, 29(4), 1993, pp. 392-393
Risultati:
1-9
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