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Results: 1-8 |
Results: 8
RESONANT-CAVITY LONGWAVE SIGE-SI PHOTODETECTOR USING A BURIED SILICIDE MIRROR
Authors: CARLINE RT NAYAR V ROBBINS DJ STANAWAY MB
Citation: Rt. Carline et al., RESONANT-CAVITY LONGWAVE SIGE-SI PHOTODETECTOR USING A BURIED SILICIDE MIRROR, IEEE photonics technology letters, 10(12), 1998, pp. 1775-1777
OPTICAL-PROPERTIES OF BONDED SILICON SILICIDE ON INSULATOR ((SOI)-O-2) - A NEW SUBSTRATE FOR ELECTRONIC AND OPTICAL-DEVICES
Authors: NAYAR V RUSSELL J CARLINE RT PIDDUCK AJ QUINN C NEVIN A BLACKSTONE S
Citation: V. Nayar et al., OPTICAL-PROPERTIES OF BONDED SILICON SILICIDE ON INSULATOR ((SOI)-O-2) - A NEW SUBSTRATE FOR ELECTRONIC AND OPTICAL-DEVICES, Thin solid films, 313, 1998, pp. 276-280
EVALUATION OF AUTOMATED SPECTROSCOPIC ELLIPSOMETRY FOR IN-LINE PROCESS-CONTROL - ESPRIT SEMICONDUCTOR EQUIPMENT ASSESSMENT (SEA) PROJECT IMPROVE
Authors: PICKERING C RUSSELL J NAYAR V IMSCHWEILER J WILLE H HARRINGTON S WIGGINS C STEHLE JL PIEL JP BRUCHEZ J
Citation: C. Pickering et al., EVALUATION OF AUTOMATED SPECTROSCOPIC ELLIPSOMETRY FOR IN-LINE PROCESS-CONTROL - ESPRIT SEMICONDUCTOR EQUIPMENT ASSESSMENT (SEA) PROJECT IMPROVE, Thin solid films, 313, 1998, pp. 446-453
INTERFACE STATE CAPTURE CROSS-SECTION MEASUREMENTS ON VACUUM ANNEALEDAND RADIATION DAMAGED SI-SIO2 SURFACES
Authors: UREN MJ NAYAR V BRUNSON KM ANTHONY CJ STATHIS JH CARTIER E
Citation: Mj. Uren et al., INTERFACE STATE CAPTURE CROSS-SECTION MEASUREMENTS ON VACUUM ANNEALEDAND RADIATION DAMAGED SI-SIO2 SURFACES, Journal of the Electrochemical Society, 145(2), 1998, pp. 683-689
THE CHARACTERIZATION OF BONDED SILICON-ON-INSULATOR (BSOI) STRUCTURESUSING LOW-TEMPERATURE SCANNING CATHODOLUMINESCENCE (CL) AND SECONDARY-ION MASS-SPECTROMETRY (SIMS)
Authors: WILLIAMS GM NEWEY JP NAYAR V
Citation: Gm. Williams et al., THE CHARACTERIZATION OF BONDED SILICON-ON-INSULATOR (BSOI) STRUCTURESUSING LOW-TEMPERATURE SCANNING CATHODOLUMINESCENCE (CL) AND SECONDARY-ION MASS-SPECTROMETRY (SIMS), Microelectronic engineering, 36(1-4), 1997, pp. 137-140
RADIATION HARDNESS OF N2O GROWN OXYNITRIDES ASSESSED USING THE CONDUCTANCE TECHNIQUE
Authors: ANTHONY CJ UREN MJ NAYAR V
Citation: Cj. Anthony et al., RADIATION HARDNESS OF N2O GROWN OXYNITRIDES ASSESSED USING THE CONDUCTANCE TECHNIQUE, Applied physics letters, 69(14), 1996, pp. 2104-2106
OPTIMIZATION OF FURNACE OXIDATION OF SI WITH RESPECT TO NEGATIVE BIASSTRESS INSTABILITY
Authors: NAYAR V JACKSON R FILLEUL ML BRUNSON KM UREN MJ HODGE AM
Citation: V. Nayar et al., OPTIMIZATION OF FURNACE OXIDATION OF SI WITH RESPECT TO NEGATIVE BIASSTRESS INSTABILITY, Microelectronic engineering, 22(1-4), 1993, pp. 47-50
THE SURFACE-ROUGHNESS AND OPTICAL-PROPERTIES OF HIGH-QUALITY SI EPITAXIAL LAYERS
Authors: NAYAR V PICKERING C PIDDUCK AJ CARLINE RT LEONG WY ROBBINS DJ
Citation: V. Nayar et al., THE SURFACE-ROUGHNESS AND OPTICAL-PROPERTIES OF HIGH-QUALITY SI EPITAXIAL LAYERS, Thin solid films, 233(1-2), 1993, pp. 40-45
Risultati: 1-8 |