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Results: 1-25 | 26-35 |
Results: 26-35/35
CRYSTALLOGRAPHIC DEFECT STUDIES IN SIMOX MATERIAL THINNED BY SACRIFICIAL OXIDATION
Authors: GILES LF MARSH CD NEJIM A HEMMENT PLF BOOKER GR
Citation: Lf. Giles et al., CRYSTALLOGRAPHIC DEFECT STUDIES IN SIMOX MATERIAL THINNED BY SACRIFICIAL OXIDATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 242-247
AN INVESTIGATION OF THE ROLE OF THE TIME-AVERAGED ION-BEAM CURRENT-DENSITY UPON THE DEFECT DENSITIES IN THIN-FILM SIMOX
Authors: NEJIM A MARSH CD GILES LF HEMMENT PLF LI Y CHATER RJ KILNER JA BOOKER GR
Citation: A. Nejim et al., AN INVESTIGATION OF THE ROLE OF THE TIME-AVERAGED ION-BEAM CURRENT-DENSITY UPON THE DEFECT DENSITIES IN THIN-FILM SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 248-253
NONDESTRUCTIVE CHARACTERIZATION OF SIMOX STRUCTURES
Authors: GEATCHES RM REESON KJ CRIDDLE AJ WEBB RP PEARSON PJ HEMMENT PLF NEJIM A
Citation: Rm. Geatches et al., NONDESTRUCTIVE CHARACTERIZATION OF SIMOX STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 258-264
A NEW CHEMICAL ETCH FOR DEFECTS STUDIES IN VERY THIN-FILM (LESS-THAN 1000 ANGSTROM) SIMOX MATERIAL
Authors: GILES LF NEJIM A HEMMENT PLF
Citation: Lf. Giles et al., A NEW CHEMICAL ETCH FOR DEFECTS STUDIES IN VERY THIN-FILM (LESS-THAN 1000 ANGSTROM) SIMOX MATERIAL, Materials chemistry and physics, 35(2), 1993, pp. 129-133
DIRECT FORMATION OF DEVICE WORTHY THIN-FILM SIMOX STRUCTURES BY LOW-ENERGY OXYGEN IMPLANTATION
Authors: NEJIM A LI Y MARSH CD HEMMENT PLF CHATER RJ KILNER JA BOOKER GR
Citation: A. Nejim et al., DIRECT FORMATION OF DEVICE WORTHY THIN-FILM SIMOX STRUCTURES BY LOW-ENERGY OXYGEN IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 822-826
INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL
Authors: LIN C LI Y KILNER JA CHATER RJ LI J NEJIM A ZHANG JP HEMMENT PLF
Citation: C. Lin et al., INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 323-326
AN INVESTIGATION OF AS-IMPLANTED MATERIAL FORMED BY HIGH-DOSE 40 KEV OXYGEN IMPLANTATION INTO SILICON AT 550-DEGREES-C
Authors: LI Y KILNER JA CHATER RJ NEJIM A HEMMENT PLF TATE TJ
Citation: Y. Li et al., AN INVESTIGATION OF AS-IMPLANTED MATERIAL FORMED BY HIGH-DOSE 40 KEV OXYGEN IMPLANTATION INTO SILICON AT 550-DEGREES-C, Journal of applied physics, 74(1), 1993, pp. 82-85
NEW ETCHANT FOR CRYSTALLOGRAPHIC DEFECT STUDIES IN THIN SOI MATERIALS(LESS-THAN-1000 A-ANGSTROM)
Authors: GILES LF NEJIM A HEMMENT PLF
Citation: Lf. Giles et al., NEW ETCHANT FOR CRYSTALLOGRAPHIC DEFECT STUDIES IN THIN SOI MATERIALS(LESS-THAN-1000 A-ANGSTROM), Electronics Letters, 29(9), 1993, pp. 788-789
THE EFFECTS OF DOSE AND TARGET TEMPERATURE ON LOW-ENERGY SIMOX LAYERS
Authors: LI Y KILNER JA CHATER RJ HEMMENT PLF NEJIM A ROBINSON AK REESON KJ MARSH CD BOOKER GR
Citation: Y. Li et al., THE EFFECTS OF DOSE AND TARGET TEMPERATURE ON LOW-ENERGY SIMOX LAYERS, Journal of the Electrochemical Society, 140(6), 1993, pp. 1780-1786
OXYGEN ISOTOPIC EXCHANGE BETWEEN AN O-18-TEMPERATURE ANNEALING( SI LAYER AND A NATURAL SIO2 CAPPING LAYER DURING HIGH)
Authors: LI YP KILNER JA CHATER RJ NEJIM A HEMMENT PLF MARSH CD BOOKER GR
Citation: Yp. Li et al., OXYGEN ISOTOPIC EXCHANGE BETWEEN AN O-18-TEMPERATURE ANNEALING( SI LAYER AND A NATURAL SIO2 CAPPING LAYER DURING HIGH), Applied physics letters, 63(20), 1993, pp. 2812-2814
Risultati: 1-25 | 26-35 |