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Results: 1-16 |
Results: 16
GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY ON P-TYPE 6H-SIC LAYERS
Authors: NIKOLAEV AE RENDAKOVA SV NIKITINA IP VASSILEVSKI KV DMITRIEV VA
Citation: Ae. Nikolaev et al., GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY ON P-TYPE 6H-SIC LAYERS, Journal of electronic materials, 27(4), 1998, pp. 288-291
MICROPIPE AND DISLOCATION DENSITY REDUCTION IN 6H-SIC AND 4H-SIC STRUCTURES GROWN BY LIQUID-PHASE EPITAXY
Authors: RENDAKOVA SV NIKITINA IP TREGUBOVA AS DMITRIEV VA
Citation: Sv. Rendakova et al., MICROPIPE AND DISLOCATION DENSITY REDUCTION IN 6H-SIC AND 4H-SIC STRUCTURES GROWN BY LIQUID-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 292-295
PHYSICAL-PROPERTIES OF BULK SINGLE-CRYSTAL WAFERS OF GALLIUM NITRIDE
Authors: IVANTSOV VA SUKHOVEEV VA NIKOLAEV VI NIKITINA IP DMITRIEV VA
Citation: Va. Ivantsov et al., PHYSICAL-PROPERTIES OF BULK SINGLE-CRYSTAL WAFERS OF GALLIUM NITRIDE, Physics of the solid state, 39(5), 1997, pp. 763-765
RESIDUAL STRAINS IN GAN GROWN ON 6H-SIC
Authors: NIKITINA IP SHEGLOV MP MELNIK YV IRVINE KG DMITRIEV VA
Citation: Ip. Nikitina et al., RESIDUAL STRAINS IN GAN GROWN ON 6H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1524-1527
STRUCTURAL-PROPERTIES OF GAN GROWN ON SIC SUBSTRATES BY HYDRIDE VAPOR-PHASE EPITAXY
Authors: MELNIK YV NIKITINA IP NIKOLAEV AE DMITRIEV VA
Citation: Yv. Melnik et al., STRUCTURAL-PROPERTIES OF GAN GROWN ON SIC SUBSTRATES BY HYDRIDE VAPOR-PHASE EPITAXY, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1532-1535
ELECTRICAL CHARACTERISTICS OF GAN 6H-SIC N-P HETEROJUNCTIONS/
Authors: KUZNETSOV NI GUBENCO AE NIKOLAEV AE MELNIK YV BLASHENKOV MN NIKITINA IP DMITRIEV VA
Citation: Ni. Kuznetsov et al., ELECTRICAL CHARACTERISTICS OF GAN 6H-SIC N-P HETEROJUNCTIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 74-78
THE INFLUENCE OF TEMPERATURE TREATMENT ON THE FORMATION OF NI-BASED SCHOTTKY DIODES AND OHMIC CONTACTS TO N-6H-SIC
Authors: RASTEGAEVA MG ANDREEV AN PETROV AA BABANIN AI YAGOVKINA MA NIKITINA IP
Citation: Mg. Rastegaeva et al., THE INFLUENCE OF TEMPERATURE TREATMENT ON THE FORMATION OF NI-BASED SCHOTTKY DIODES AND OHMIC CONTACTS TO N-6H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 254-258
TI NI OHMIC CONTACTS TO N-TYPE GALLIUM NITRIDE/
Authors: VASSILEVSKI KV RASTEGAEVA MG BABANIN AI NIKITINA IP DMITRIEV VA
Citation: Kv. Vassilevski et al., TI NI OHMIC CONTACTS TO N-TYPE GALLIUM NITRIDE/, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 292-295
EFFECTS OF SUBSTRATE TYPE ON THE CHARACTERISTICS OF GAN EPITAXIAL-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: CHENG TS FOXON CT REN GB ORTON JW MELNIK YV NIKITINA IP NIKOLAEV AE NOVIKOV SV DMITRIEV VA
Citation: Ts. Cheng et al., EFFECTS OF SUBSTRATE TYPE ON THE CHARACTERISTICS OF GAN EPITAXIAL-FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 12(7), 1997, pp. 917-920
RAMAN AND PHOTOLUMINESCENCE STUDIES OF BIAXIAL STRAIN IN GAN EPITAXIAL LAYERS GROWN ON 6H-SIC
Authors: DAVYDOV VY AVERKIEV NS GONCHARUK IN NELSON DK NIKITINA IP POLKOVNIKOV AS SMIRNOV AN JACOBSEN MA SEMCHINOVA OK
Citation: Vy. Davydov et al., RAMAN AND PHOTOLUMINESCENCE STUDIES OF BIAXIAL STRAIN IN GAN EPITAXIAL LAYERS GROWN ON 6H-SIC, Journal of applied physics, 82(10), 1997, pp. 5097-5102
EDGE LUMINESCENCE OF ALN-GAN SOLID-SOLUTIONS
Authors: ZUBRILOV AS TSVETKOV DV NIKOLAEV VI NIKITINA IP
Citation: As. Zubrilov et al., EDGE LUMINESCENCE OF ALN-GAN SOLID-SOLUTIONS, Semiconductors, 30(11), 1996, pp. 1069-1073
LUMINESCENCE OF EPITAXIAL-FILMS OF ALN-GA N SOLID-SOLUTIONS GROWN ON GALLIUM NITRIDE LAYERS
Authors: ZUBRILOV AS TSVETKOV DV NIKOLAEV VI NIKITINA IP
Citation: As. Zubrilov et al., LUMINESCENCE OF EPITAXIAL-FILMS OF ALN-GA N SOLID-SOLUTIONS GROWN ON GALLIUM NITRIDE LAYERS, Fizika tverdogo tela, 38(8), 1996, pp. 2372-2375
DEFORMATION OF NITROGEN-DOPED CUBIC POLYTYPE SIC
Authors: NIKITINA IP NIKOLAEV AE
Citation: Ip. Nikitina et Ae. Nikolaev, DEFORMATION OF NITROGEN-DOPED CUBIC POLYTYPE SIC, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 784-786
SUBLIMATION EPITAXY OF 6H-SIC AND 4H-SIC ON SILICON-CARBIDE 1-INCH MONOCRYSTALLINE SUBSTRATES PREPARED FROM VOLUME BARS
Authors: MAKSIMOV AY MALTSEV AA YUSHIN NK NIKITINA IP
Citation: Ay. Maksimov et al., SUBLIMATION EPITAXY OF 6H-SIC AND 4H-SIC ON SILICON-CARBIDE 1-INCH MONOCRYSTALLINE SUBSTRATES PREPARED FROM VOLUME BARS, Pis'ma v Zurnal tehniceskoj fiziki, 21(8), 1995, pp. 51-57
STRUCTURAL-ANALYSIS OF 4H-SIC LAYERS GROWN ON 6H-SIC AND 15R-SIC SUBSTRATES
Authors: NIKITINA IP GLASS RC JANZEN E GUSEVA NB MALTSEV AA
Citation: Ip. Nikitina et al., STRUCTURAL-ANALYSIS OF 4H-SIC LAYERS GROWN ON 6H-SIC AND 15R-SIC SUBSTRATES, Journal of crystal growth, 152(4), 1995, pp. 292-299
FEATURES OF THE SYNTHESIS OF HETEROEPITAXIAL STRUCTURES BASED ON SOLID-SOLUTIONS OF (SIC)1-X(ALN)X
Authors: OFITSERVOA NV KURBANOV MK NIKITINA IP SOROKIN ND SAFARALIEV GK TAIROV YM TSVETKOV VF
Citation: Nv. Ofitservoa et al., FEATURES OF THE SYNTHESIS OF HETEROEPITAXIAL STRUCTURES BASED ON SOLID-SOLUTIONS OF (SIC)1-X(ALN)X, Inorganic materials, 28(9), 1992, pp. 1627-1629
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