AAAAAA

   
Results: 1-9 |
Results: 9

Authors: NIKONOROV VV MOSKVIN LN
Citation: Vv. Nikonorov et Ln. Moskvin, FLOW-INJECTION DETERMINATION OF TRACE NITRITE WITH CHROMATOMEMBRANE EXTRACTION PRECONCENTRATION, Journal of analytical chemistry, 53(10), 1998, pp. 948-951

Authors: GAVRILENKO VI EROFEEVA IV KOROTKOV AL KRASILNIK ZF KUZNETSOV OA MOLDAVSKAYA MD NIKONOROV VV PARAMONOV LV
Citation: Vi. Gavrilenko et al., SHALLOW ACCEPTORS IN GE GESI STRAINED MULTILAYER HETEROSTRUCTURES WITH QUANTUM-WELLS/, JETP letters, 65(2), 1997, pp. 209-214

Authors: MOSKVIN LN NIKONOROV VV
Citation: Ln. Moskvin et Vv. Nikonorov, FLOW-INJECTION DETERMINATION OF SULFUR-DIOXIDE IN AIR WITH CHROMATOMEMBRANE PRECONCENTRATION, Journal of analytical chemistry, 51(8), 1996, pp. 820-823

Authors: NIKONOROV VV MOSKVIN LN
Citation: Vv. Nikonorov et Ln. Moskvin, NEW REAGENT FOR DETERMINING NITRITES, Journal of analytical chemistry, 51(7), 1996, pp. 679-681

Authors: NIKONOROV VV MOSKVIN LN
Citation: Vv. Nikonorov et Ln. Moskvin, SPECTROPHOTOMETRIC DETERMINATION OF NITRITE WITH 4-IODO-N,N-DIMETHYLANILINE, Analytica chimica acta, 306(2-3), 1995, pp. 357-360

Authors: GAVRILENKO VI KOZLOV IN MOLDAVSKAYA MD NIKONOROV VV ORLOV LK KUZNETSOV OA CHERNOV AL
Citation: Vi. Gavrilenko et al., CYCLOTRON-RESONANCE IN GE LAYERS OF GE1-XSIX-GE STRAINED HETEROSTRUCTURES, JPN J A P 1, 33(4B), 1994, pp. 2386-2387

Authors: KUSTOVA OV NIKONOROV VV MOSKVIN LN
Citation: Ov. Kustova et al., DETERMINATION OF HALIDE-IONS BY STRIPPING VOLTAMMETRY WITH THE USE OFSENSORS BASED ON AGBR-AG2S-AS2S3 ALLOYS, Journal of analytical chemistry, 49(6), 1994, pp. 587-589

Authors: GAVRILENKO VI KOZLOV IN KUZNETSOV OA MOLDAVSKAYA MD NIKONOROV VV ORLOV LK CHERNOV AL
Citation: Vi. Gavrilenko et al., CYCLOTRON-RESONANCE OF CHARGE-CARRIERS IN STRAINED GE GE1-XSIX HETEROSTRUCTURES/, JETP letters, 59(5), 1994, pp. 348-352

Authors: GAVRILENKO VI KALUGIN NG KRASILNIK ZF NIKONOROV VV GALYAGIN AV TSERETELI PN
Citation: Vi. Gavrilenko et al., INVERTED DISTRIBUTIONS OF HOT HOLES IN UNIAXIALLY STRESSED GERMANIUM, Semiconductor science and technology, 7(3B), 1992, pp. 649-651
Risultati: 1-9 |