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Results: 1-21 |
Results: 21
SPACE-CHARGE LIMITATIONS TO THROUGHPUT IN PROJECTION ELECTRON-BEAM LITHOGRAPHY (SCALPEL)
Authors: LIDDLE JA BLAKEY MI KNUREK CS MKRTCHYAN MM NOVEMBRE AE OCOLA L SAUNDERS T WASKIEWICZ WK
Citation: Ja. Liddle et al., SPACE-CHARGE LIMITATIONS TO THROUGHPUT IN PROJECTION ELECTRON-BEAM LITHOGRAPHY (SCALPEL), Microelectronic engineering, 42, 1998, pp. 155-158
PHOTON TUNNELING MICROSCOPY OF LATENT RESIST IMAGES
Authors: LIDDLE JA FERNANDEZ AT CIRELLI R MKRTCHYAN MM NOVEMBRE AE PEABODY ML WATSON GP
Citation: Ja. Liddle et al., PHOTON TUNNELING MICROSCOPY OF LATENT RESIST IMAGES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2162-2166
METROLOGY OF SCATTERING WITH ANGULAR LIMITATION PROJECTION ELECTRON LITHOGRAPHY MASKS
Authors: LIDDLE JA BLAKEY MI SAUNDERS T FARROW RC FETTER LA KNUREK CS KASICA R NOVEMBRE AE PEABODY ML TENNANT DM WINDT DL POSTEK M
Citation: Ja. Liddle et al., METROLOGY OF SCATTERING WITH ANGULAR LIMITATION PROJECTION ELECTRON LITHOGRAPHY MASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2197-2203
RESIST DESIGN CONCEPTS FOR 193 NM LITHOGRAPHY - OPPORTUNITIES FOR INNOVATION AND INVENTION
Authors: REICHMANIS E NALAMASU O HOULIHAN FM WALLOW TI TIMKO AG CIRELLI R DABBAGH G HUTTON RS NOVEMBRE AE SMITH BW
Citation: E. Reichmanis et al., RESIST DESIGN CONCEPTS FOR 193 NM LITHOGRAPHY - OPPORTUNITIES FOR INNOVATION AND INVENTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2528-2533
REVOLUTIONARY AND EVOLUTIONARY RESIST DESIGN CONCEPTS FOR 193-NM LITHOGRAPHY
Authors: NALAMASU O WALLOW TI REICHMANIS E NOVEMBRE AE HOULIHAN FM DABBAGH G MIXON DA HUTTON RS TIMKO AG WOOD OR CIRELLI RA
Citation: O. Nalamasu et al., REVOLUTIONARY AND EVOLUTIONARY RESIST DESIGN CONCEPTS FOR 193-NM LITHOGRAPHY, Microelectronic engineering, 35(1-4), 1997, pp. 133-136
THE SCALPEL PROOF-OF-CONCEPT SYSTEM
Authors: HARRIOTT LR BERGER SD BIDDICK C BLAKEY MI BOWLER SW BRADY K CAMARDA RM CONNELLY WF CRORKEN A CUSTY J DEMARCO R FARROW RC FELKER JA FETTER L FREEMAN R HOPKINS L HUGGINS HA KNUREK CS KRAUS JS LIDDLE JA MKRTYCHAN M NOVEMBRE AE PEABODY ML TARASCON RG WADE HH WASKIEWICZ WK WATSON GP WERDER KS WINDT D
Citation: Lr. Harriott et al., THE SCALPEL PROOF-OF-CONCEPT SYSTEM, Microelectronic engineering, 35(1-4), 1997, pp. 477-480
193 NM LITHOGRAPHY USING A NEGATIVE ACTING P(SI-CMS) RESIST
Authors: SMITH BW NOVEMBRE AE MIXON DA
Citation: Bw. Smith et al., 193 NM LITHOGRAPHY USING A NEGATIVE ACTING P(SI-CMS) RESIST, Microelectronic engineering, 34(2), 1997, pp. 137-145
PRELIMINARY-RESULTS FROM A PROTOTYPE PROJECTION ELECTRON-BEAM STEPPER-SCATTERING WITH ANGULAR LIMITATION PROJECTION ELECTRON-BEAM LITHOGRAPHY PROOF-OF-CONCEPT SYSTEM
Authors: HARRIOTT LR BERGER SD BIDDICK C BLAKEY MI BOWLER SW BRADY K CAMARDA RM CONNELLY WF CRORKEN A CUSTY J DIMARCO R FARROW RC FELKER JA FETTER L FREEMAN R HOPKINS L HUGGINS HA KNUREK CS KRAUS JS LIDDLE JA MKRTYCHAN M NOVEMBRE AE PEABODY ML TARASCON RG WADE HH WASKIEWICZ WK WATSON GP WERDER KS WINDT D
Citation: Lr. Harriott et al., PRELIMINARY-RESULTS FROM A PROTOTYPE PROJECTION ELECTRON-BEAM STEPPER-SCATTERING WITH ANGULAR LIMITATION PROJECTION ELECTRON-BEAM LITHOGRAPHY PROOF-OF-CONCEPT SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3825-3828
THE ELECTRON-BEAM AND X-RAY LITHOGRAPHIC PERFORMANCE OF THE HIGH-RESOLUTION CAMP AND ARCH FAMILY OF CHEMICALLY AMPLIFIED RESISTS
Authors: NOVEMBRE AE MUNZEL N
Citation: Ae. Novembre et N. Munzel, THE ELECTRON-BEAM AND X-RAY LITHOGRAPHIC PERFORMANCE OF THE HIGH-RESOLUTION CAMP AND ARCH FAMILY OF CHEMICALLY AMPLIFIED RESISTS, Microelectronic engineering, 32(1-4), 1996, pp. 229-239
THE SCATTERING WITH ANGULAR LIMITATION IN PROJECTION ELECTRON-BEAM LITHOGRAPHY (SCALPEL) SYSTEM
Authors: LIDDLE JA BERGER SD BIDDICK CJ BLAKEY MI BOLAN KJ BOWLER SW BRADY K CAMARDA RM CONNELLY WF CRORKEN A CUSTY J FARROW RC FELKER JA FETTER LA FREEMAN B HARRIOTT LR HOPKINS L HUGGINS HA KNUREK CS KRAUS JS MIXON DA MKRTCHYAN MM NOVEMBRE AE PEABODY ML SIMPSON WM TARASCON RG WADE HH WASKIEWICZ WK WATSON GP WILLIAMS JK WINDT DL
Citation: Ja. Liddle et al., THE SCATTERING WITH ANGULAR LIMITATION IN PROJECTION ELECTRON-BEAM LITHOGRAPHY (SCALPEL) SYSTEM, JPN J A P 1, 34(12B), 1995, pp. 6663-6671
PRECISE MEASUREMENT OF THE EFFECTIVE BACKSCATTER COEFFICIENT FOR 100-KEV ELECTRON-BEAM LITHOGRAPHY ON SI
Authors: WATSON GP BERGER SD LIDDLE JA FETTER LA FARROW RC TARASCON RG MKRTCHYAN M NOVEMBRE AE BLAKEY MI BOLAN KJ POLI L
Citation: Gp. Watson et al., PRECISE MEASUREMENT OF THE EFFECTIVE BACKSCATTER COEFFICIENT FOR 100-KEV ELECTRON-BEAM LITHOGRAPHY ON SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2535-2538
ROLE OF ETCH PATTERN FIDELITY IN THE PRINTING OF OPTICAL PROXIMITY CORRECTED PHOTOMASKS
Authors: KORNBLIT A DEMARCO JJ GAROFALO J MIXON DA NOVEMBRE AE VAIDYA S KOOK T
Citation: A. Kornblit et al., ROLE OF ETCH PATTERN FIDELITY IN THE PRINTING OF OPTICAL PROXIMITY CORRECTED PHOTOMASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2944-2948
LITHOGRAPHIC EVALUATION OF A POSITIVE-ACTING CHEMICALLY AMPLIFIED RESIST SYSTEM UNDER CONVENTIONAL AND PROJECTION ELECTRON-BEAM EXPOSURES
Authors: TARASCON RG NOVEMBRE AE BOLAN K BLAKEY M KNUREK C FETTER L HUGGINS HA LIDDLE JA NALAMASU O
Citation: Rg. Tarascon et al., LITHOGRAPHIC EVALUATION OF A POSITIVE-ACTING CHEMICALLY AMPLIFIED RESIST SYSTEM UNDER CONVENTIONAL AND PROJECTION ELECTRON-BEAM EXPOSURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2975-2979
STUDIES OF 1 AND 2 KEV ELECTRON-BEAM LITHOGRAPHY USING SILICON-CONTAINING P(SI-CMS) RESIST
Authors: LO CW LO WK ROOKS MJ ISAACSON M CRAIGHEAD HG NOVEMBRE AE
Citation: Cw. Lo et al., STUDIES OF 1 AND 2 KEV ELECTRON-BEAM LITHOGRAPHY USING SILICON-CONTAINING P(SI-CMS) RESIST, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2980-2985
A UNIFIED APPROACH TO RESIST MATERIALS DESIGN FOR THE ADVANCED LITHOGRAPHIC TECHNOLOGIES
Authors: NALAMASU O REICHMANIS E TIMKO AG TARASCON R NOVEMBRE AE SLATER S HOLZWARTH H FALCIGNO P MUNZEL N
Citation: O. Nalamasu et al., A UNIFIED APPROACH TO RESIST MATERIALS DESIGN FOR THE ADVANCED LITHOGRAPHIC TECHNOLOGIES, Microelectronic engineering, 27(1-4), 1995, pp. 367-370
IDENTIFICATION OF SENSITIVE POSITIVE AND NEGATIVE WORKING RESIST MATERIALS FOR PROXIMITY X-RAY-LITHOGRAPHY
Authors: NOVEMBRE AE KOMETANI JM KNUREK CS KUMAR U NEENAN TX MIXON DA NALAMASU O MUNZEL N
Citation: Ae. Novembre et al., IDENTIFICATION OF SENSITIVE POSITIVE AND NEGATIVE WORKING RESIST MATERIALS FOR PROXIMITY X-RAY-LITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 389-392
NEAR-FIELD OPTICAL LATENT IMAGING WITH THE PHOTON TUNNELING MICROSCOPE
Authors: MARCHMAN HM NOVEMBRE AE
Citation: Hm. Marchman et Ae. Novembre, NEAR-FIELD OPTICAL LATENT IMAGING WITH THE PHOTON TUNNELING MICROSCOPE, Applied physics letters, 66(24), 1995, pp. 3269-3271
LITHOGRAPHIC PERFORMANCE OF A NEGATIVE RESIST UNDER SCATTERING WITH ANGULAR LIMITATION FOR PROJECTION ELECTRON LITHOGRAPHY EXPOSURE AT 100 KEV
Authors: TARASCON RG BOLAN K BLAKEY M CAMARDA RM FARROW RC FETTER LA HUGGINS HA KRAUS JS LIDDLE JA MIXON DA NOVEMBRE AE WATSON GP BERGER SD
Citation: Rg. Tarascon et al., LITHOGRAPHIC PERFORMANCE OF A NEGATIVE RESIST UNDER SCATTERING WITH ANGULAR LIMITATION FOR PROJECTION ELECTRON LITHOGRAPHY EXPOSURE AT 100 KEV, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3444-3448
SINGLE-COMPONENT DEEP-ULTRAVIOLET AND X-RAY RESISTS - THE LITHOGRAPHIC BEHAVIOR OF LY[(2-METHYL-4-T-BUTOXYCARBONYLOXYSTYRENE)SULFONE] AND LY[(3-CHLORO-4-T-BUTOXYCARBONYLOXYSTYRENE)SULFONE]
Authors: NEENAN TX KUMAR U KOMETANI JM NOVEMBRE AE
Citation: Tx. Neenan et al., SINGLE-COMPONENT DEEP-ULTRAVIOLET AND X-RAY RESISTS - THE LITHOGRAPHIC BEHAVIOR OF LY[(2-METHYL-4-T-BUTOXYCARBONYLOXYSTYRENE)SULFONE] AND LY[(3-CHLORO-4-T-BUTOXYCARBONYLOXYSTYRENE)SULFONE], Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2779-2782
PATTERNING OF X-RAY MASKS USING THE NEGATIVE-ACTING RESIST P(SI-CMS)
Authors: MIXON DA NOVEMBRE AE TAI WW JURGENSEN CW FRACKOVIAK J TRIMBLE LE KOLA RR CELLER GK
Citation: Da. Mixon et al., PATTERNING OF X-RAY MASKS USING THE NEGATIVE-ACTING RESIST P(SI-CMS), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2834-2838
LITHOGRAPHIC RESIST MATERIALS CHEMISTRY
Authors: REICHMANIS E NOVEMBRE AE
Citation: E. Reichmanis et Ae. Novembre, LITHOGRAPHIC RESIST MATERIALS CHEMISTRY, Annual review of materials science, 23, 1993, pp. 11-43
Risultati: 1-21 |