AAAAAA

   
Results: 1-13 |
Results: 13
Weaknesses of protocols for updating the parameters of an established threshold scheme
Authors: Martin, KM Nakahara, J
Citation: Km. Martin et J. Nakahara, Weaknesses of protocols for updating the parameters of an established threshold scheme, IEE P-COM D, 148(1), 2001, pp. 45-48
Papers presented at the 9th International Conference on High Pressure Semiconductor Physics (HPSP-IX) Sapporo, Japan, September 24-28, 2000 - Preface
Authors: Nakahara, J Kobayashi, T Onari, S
Citation: J. Nakahara et al., Papers presented at the 9th International Conference on High Pressure Semiconductor Physics (HPSP-IX) Sapporo, Japan, September 24-28, 2000 - Preface, PHYS ST S-B, 223(1), 2001, pp. 3-3
High pressure photoluminescence study of the GaAs/partially ordered GaInP interface
Authors: Kobayashi, T Inoue, K Prins, AD Uchida, K Nakahara, J
Citation: T. Kobayashi et al., High pressure photoluminescence study of the GaAs/partially ordered GaInP interface, PHYS ST S-B, 223(1), 2001, pp. 123-128
Pressure dependence of the birefringence in AgGaS2
Authors: Nakanishi, M Yamamoto, S Matsuhashi, T Goshima, D Nakahara, J
Citation: M. Nakanishi et al., Pressure dependence of the birefringence in AgGaS2, PHYS ST S-B, 223(1), 2001, pp. 325-329
Myelin basic protein is necessary for the regulation of myelin-associated glycoprotein expression in mouse oligodendroglia
Authors: Nakahara, J Tan-Takeuchi, K Seiwa, C Yagi, T Aiso, S Kawamura, K Asou, H
Citation: J. Nakahara et al., Myelin basic protein is necessary for the regulation of myelin-associated glycoprotein expression in mouse oligodendroglia, NEUROSCI L, 298(3), 2001, pp. 163-166
High-pressure study of deep emission band at GaAs/partially ordered GaInP interface
Authors: Kobayashi, T Ohmae, T Ito, T Uchida, K Nakahara, J
Citation: T. Kobayashi et al., High-pressure study of deep emission band at GaAs/partially ordered GaInP interface, J LUMINESC, 87-9, 2000, pp. 408-410
Observation of 'broad Raman' component in resonant secondary radiation
Authors: Nakamura, R Ishizumi, A Yamamoto, S Watanabe, J Nakahara, J
Citation: R. Nakamura et al., Observation of 'broad Raman' component in resonant secondary radiation, J LUMINESC, 87-9, 2000, pp. 911-913
Photoluminescence spectra of CuAlS2 doped with Er
Authors: Nakahara, J Itoh, K Sato, K Yamamoto, S
Citation: J. Nakahara et al., Photoluminescence spectra of CuAlS2 doped with Er, J LUMINESC, 87-9, 2000, pp. 1112-1114
Pressure dependence of photoluminescence in GaAs/partially ordered GaInP interface
Authors: Kobayashi, T Ohmae, T Uchida, K Nakahara, J
Citation: T. Kobayashi et al., Pressure dependence of photoluminescence in GaAs/partially ordered GaInP interface, JPN J A P 1, 38(2B), 1999, pp. 1004-1007
Energy transfer between Mn ions in semimagnetic semiconductors
Authors: Yamamoto, S Takamura, K Nakahara, J
Citation: S. Yamamoto et al., Energy transfer between Mn ions in semimagnetic semiconductors, PHYS ST S-B, 211(1), 1999, pp. 111-116
Decay process of photoluminescence in CdMnTe
Authors: Nakahara, J Takamura, K Yamamoto, S
Citation: J. Nakahara et al., Decay process of photoluminescence in CdMnTe, PHYS ST S-B, 211(1), 1999, pp. 223-231
Time-resolved photoluminescence study of GaAs ordered GaInP interface under high pressure
Authors: Kobayashi, T Matsui, A Ohmae, T Uchida, K Nakahara, J
Citation: T. Kobayashi et al., Time-resolved photoluminescence study of GaAs ordered GaInP interface under high pressure, PHYS ST S-B, 211(1), 1999, pp. 247-253
Polarized photoluminescence with long lifetime in AgGaS2
Authors: Nakahara, J Narita, Y Itoh, K Niwa, E Masumoto, K Yamamoto, S
Citation: J. Nakahara et al., Polarized photoluminescence with long lifetime in AgGaS2, PHYS ST S-B, 210(2), 1998, pp. 479-483
Risultati: 1-13 |