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Results:
1-15
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Results: 15
Authors:
Huang, WD
Nishinaga, T
Naritsuka, S
Citation: Wd. Huang et al., Microchannel epitaxy of GaAs from parallel and nonparallel seeds, JPN J A P 1, 40(9A), 2001, pp. 5373-5376
Authors:
Huang, WD
Nishinaga, T
Naritsuka, S
Citation: Wd. Huang et al., AlSb compositional nonuniformity induced by different Ga-Al exchange modesin the melt growth of AlxGa1-xSb, JPN J A P 1, 40(7), 2001, pp. 4648-4651
Authors:
Naritsuka, S
Nishinaga, T
Citation: S. Naritsuka et T. Nishinaga, Interface-supersaturation estimated from the shape of steps on the surfaceof InP MCE by LPE, J CRYST GR, 222(1-2), 2001, pp. 14-19
Authors:
Toyoda, K
Hiraoka, YS
Naritsuka, S
Nishinaga, T
Citation: K. Toyoda et al., Ab initio calculations on the dissociative reaction of As-4 molecules, APPL SURF S, 159, 2000, pp. 360-367
Authors:
Kishimoto, D
Ogura, T
Yamashiki, A
Nishinaga, T
Naritsuka, S
Sakaki, H
Citation: D. Kishimoto et al., 2D-nucleation on (111)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fabrication, J CRYST GR, 216(1-4), 2000, pp. 1-5
Authors:
Huang, WD
Naritsuka, S
Nishinaga, T
Citation: Wd. Huang et al., Vertical Bridgman growth of AlxGa1-xSb single crystals, J CRYST GR, 213(3-4), 2000, pp. 207-213
Authors:
Kishimoto, D
Nishinaga, T
Naritsuka, S
Noda, T
Nakamura, Y
Sakaki, H
Citation: D. Kishimoto et al., (111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation, J CRYST GR, 212(3-4), 2000, pp. 373-378
Authors:
Yan, Z
Hamaoka, Y
Naritsuka, S
Nishinaga, T
Citation: Z. Yan et al., Coalescence in microchannel epitaxy of InP, J CRYST GR, 212(1-2), 2000, pp. 1-10
Authors:
Naritsuka, S
Nishinaga, T
Tachikawa, M
Mori, H
Citation: S. Naritsuka et al., Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source, J CRYST GR, 211(1-4), 2000, pp. 395-399
Authors:
Yan, Z
Naritsuka, S
Nishinaga, T
Citation: Z. Yan et al., Two-dimensional numerical calculation of solute diffusion in microchannel epitaxy of InP, J CRYST GR, 209(1), 2000, pp. 1-7
Authors:
Naritsuka, S
Nishinaga, T
Citation: S. Naritsuka et T. Nishinaga, Liquid-phase epitaxy (LPE) microchannel epitaxy of InP with high reproducibility achieved by predeposition of In thin layer, J CRYST GR, 203(4), 1999, pp. 459-463
Authors:
Yan, Z
Naritsuka, S
Nishinaga, T
Citation: Z. Yan et al., Interface supersaturation in microchannel epitaxy of InP, J CRYST GR, 203(1-2), 1999, pp. 25-30
Authors:
Yan, Z
Naritsuka, S
Nishinaga, T
Citation: Z. Yan et al., Interface supersaturation dependence of step velocity in liquid-phase epitaxy of InP, J CRYST GR, 199, 1999, pp. 1077-1081
Authors:
Naritsuka, S
Yan, Z
Nishinaga, T
Citation: S. Naritsuka et al., Two-dimensional nucleation at stacking fault during InP microchannel epitaxy, J CRYST GR, 199, 1999, pp. 1082-1086
Authors:
Naritsuka, S
Handa, I
Nishinaga, T
Citation: S. Naritsuka et al., Three-dimensional calculation of residual stress in InP layers grown by microchannel epitaxy on Si substrates, JPN J A P 1, 37(11), 1998, pp. 5885-5889
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