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Results:
1-7
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Results: 7
Authors:
Lysenko, VS
Tyagulskii, IP
Osiyuk, IN
Nazarov, AN
Vovk, YN
Gomenyuk, YV
Terukov, EI
Kon'kov, OI
Citation: Vs. Lysenko et al., Effect of erbium on electronic traps in PECVD-grown a-Si : H(Er)/c-Si structures, SEMICONDUCT, 35(6), 2001, pp. 621-626
Authors:
Nazarov, AN
Pinchuk, VM
Yanchuk, TV
Lysenko, VS
Vovk, YN
Rangan, S
Ashok, S
Kudoyarova, V
Terukov, EI
Citation: An. Nazarov et al., Hydrogen effect on enhancement of defect reactions in semiconductors: example for silicon and vacancy defects, INT J HYD E, 26(5), 2001, pp. 521-526
Authors:
Lysenko, VS
Nazarov, AN
Kilchytska, VI
Osiyuk, IN
Tyagulski, IP
Gomeniuk, YV
Barchuk, IP
Citation: Vs. Lysenko et al., Thermally activated processes in the buried oxide of SIMOX SOI structures and devices, SOL ST ELEC, 45(4), 2001, pp. 575-584
Authors:
Nazarov, AN
Vovk, YN
Lysenko, VS
Turchanikov, VI
Scryshevskii, VA
Ashok, S
Citation: An. Nazarov et al., Carrier transport in amorphous SiC/crystalline silicon heterojunctions, J APPL PHYS, 89(8), 2001, pp. 4422-4428
Authors:
Nazarov, AN
Kilchytska, VI
Barchuk, IP
Tkachenko, AS
Ashok, S
Citation: An. Nazarov et al., Radio frequency plasma annealing of positive charge generated by Fowler-Nordheim electron injection in buried oxides in silicon, J VAC SCI B, 18(3), 2000, pp. 1254-1261
Authors:
Nazarov, AN
Barchuk, IP
Lysenko, VS
Colinge, JP
Citation: An. Nazarov et al., Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxide, MICROEL ENG, 48(1-4), 1999, pp. 379-382
Authors:
Nazarov, AN
Citation: An. Nazarov, Service traffic models with bit rate of transmission in wideband integral service digital networks, AUT REMOT R, 59(9), 1998, pp. 1245-1254
Risultati:
1-7
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