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Results: 1-25/32
Authors:
Zheng, HQ
Radahakrishnan, K
Yoon, SF
Ng, GI
Citation: Hq. Zheng et al., Optimization of InxGa1-xAs/ln(y)AI(1-y)As high electron mobility transistor structures grown by solid-source molecular beam epitaxy, J VAC SCI B, 19(2), 2001, pp. 490-494
Authors:
Jiang, HJ
Yuan, XC
Lam, YL
Chan, YC
Ng, GI
Citation: Hj. Jiang et al., Single-step fabrication of surface relief diffractive optical elements on hybrid sol-gel glass, OPT ENG, 40(9), 2001, pp. 2017-2021
Authors:
Wang, H
Ng, GI
Citation: H. Wang et Gi. Ng, Electrical properties and transport mechanisms of InP/InGaAs HBTs operatedat low temperature, IEEE DEVICE, 48(8), 2001, pp. 1492-1497
Authors:
Wang, H
Ng, GI
Citation: H. Wang et Gi. Ng, Investigation of the degradation of InGaAS/InP double HBTs under reverse base-collector bias stress, IEEE DEVICE, 48(11), 2001, pp. 2647-2654
Authors:
Xiong, YZ
Ng, GI
Wang, H
Fu, JS
Citation: Yz. Xiong et al., DC and microwave noise transient behavior of InP/InGaAs double heterojunction bipolar transistor (DHBT) with polyimide passivation, IEEE DEVICE, 48(10), 2001, pp. 2192-2197
Authors:
Chen, YW
Ooi, BS
Ng, GI
Radhakrishnan, K
Tan, CL
Citation: Yw. Chen et al., Dry via hole etching of GaAs using high-density Cl-2/Ar plasma, J VAC SCI B, 18(5), 2000, pp. 2509-2512
Authors:
Chen, YW
Ooi, BS
Ng, GI
Tan, CL
Citation: Yw. Chen et al., Electron cyclotron resonance plasma etching of InP through-wafer connections at > 4 mu m/min using Cl-2/Ar, J VAC SCI B, 18(4), 2000, pp. 1903-1905
Authors:
Sathya, B
Radhakrishnan, K
Zheng, HQ
Yuan, K
Ng, GI
Yoon, SF
Citation: B. Sathya et al., Electrical and optical characterization of regrown PHEMT layer structures on etched GaAs surfaces, J MAT S-M E, 11(5), 2000, pp. 379-382
Authors:
Chen, YW
Ooi, BS
Ng, GI
Citation: Yw. Chen et al., Electron cyclotron resonance etching of GaAs vias for monolithic microwaveintegrated circuits, OPT MATER, 14(3), 2000, pp. 223-227
Authors:
Zheng, HQ
Yoon, SF
Gay, BP
Mah, KW
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Optimization of InxGa1-xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy, MAT SCI E B, 75(2-3), 2000, pp. 110-114
Authors:
Chen, YW
Ooi, BS
Ng, GI
Tan, CL
Citation: Yw. Chen et al., High-rate electron cyclotron resonance etching of GaAs via holes, MAT SCI E B, 74(1-3), 2000, pp. 282-285
Authors:
Wang, H
Ng, GI
Zheng, HQ
Xiong, YZ
Chua, LH
Yuan, KH
Radhakrishnan, K
Yoon, SF
Citation: H. Wang et al., Demonstration of aluminum-free metamorphic InP/Tn(0.53)Ga(0.47)As/InP double heterojunction bipolar transistors on GaAs substrates, IEEE ELEC D, 21(9), 2000, pp. 427-429
Authors:
Radhakrishnan, K
Tan, CL
Zheng, HQ
Ng, GI
Citation: K. Radhakrishnan et al., Preparation and characterization of rf-sputtered SrTiO3 thin films, J VAC SCI A, 18(4), 2000, pp. 1638-1641
Authors:
Yan, BP
Wang, H
Pan, Y
Ng, GI
Citation: Bp. Yan et al., The influence of different isolation processes on the performance of AlGaAs/GaAs heterojunction bipolar transistors for power applications, SOL ST ELEC, 44(11), 2000, pp. 1989-1995
Authors:
Zheng, HQ
Wang, H
Zhang, PH
Zeng, Z
Radahakrishnan, K
Yoon, SF
Ng, GI
Citation: Hq. Zheng et al., Band gap narrowing effect in Be-doped AlxGa1-xAs studied by photoluminescence spectroscopy, SOL ST ELEC, 44(1), 2000, pp. 37-40
Authors:
Zheng, HQ
Yoon, SF
Gay, BP
Mah, KW
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Growth optimization of InGaP layers by solid source molecular beam epitaxyfor the application of InGaP/In0.2Ga As-0.8/GaAs high electron mobility transistor structures, J CRYST GR, 216(1-4), 2000, pp. 51-56
Authors:
Zheng, HQ
Radahakrishnan, K
Yoon, SF
Ng, GI
Citation: Hq. Zheng et al., Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell, J APPL PHYS, 87(11), 2000, pp. 7988-7993
Authors:
Wang, H
Ng, GI
Citation: H. Wang et Gi. Ng, Avalanche multiplication in InP/InGaAs double heterojunction bipolar transistors with composite collectors, IEEE DEVICE, 47(6), 2000, pp. 1125-1133
Authors:
Wang, H
Ng, GI
Citation: H. Wang et Gi. Ng, Current transient in polyimide-passivated InP/InGaAs heterojunction bipolar transistors: Systematic experiments and physical model, IEEE DEVICE, 47(12), 2000, pp. 2261-2269
Authors:
Zheng, HQ
Radhakrishnan, K
Wang, H
Yuan, KH
Yoon, SF
Ng, GI
Citation: Hq. Zheng et al., Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy, APPL PHYS L, 77(6), 2000, pp. 869-871
Authors:
Yan, BP
Wang, H
Ng, GI
Citation: Bp. Yan et al., Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-pheterojunction bipolar transistors, APPL PHYS L, 77(25), 2000, pp. 4217-4219
Authors:
Yoon, SF
Zheng, HQ
Zhang, PH
Man, KW
Ng, GI
Citation: Sf. Yoon et al., Molecular beam epitaxial growth of InP using a valved phosphorus cracker cell: Optimization of electrical, optical and surface morphology characteristics, JPN J A P 1, 38(2B), 1999, pp. 981-984
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Ang, KS
Wang, H
Ng, GI
Citation: Sf. Yoon et al., 0.25-mu m gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy, SOL ST ELEC, 43(4), 1999, pp. 785-789
Authors:
Zheng, HQ
Yoon, SF
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Improved transport properties of InxGa1-xP/In0.2Ga0.8As/GaAs pseudomorphichigh electron mobility transistor structures, SOL ST COMM, 112(12), 1999, pp. 661-664
Authors:
Yoon, SF
Kam, AHT
Gay, BP
Zheng, HQ
Ng, GI
Citation: Sf. Yoon et al., Study of In0.48Ga0.52P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor using a two-dimensional device simulator, MICROELEC J, 30(8), 1999, pp. 745-752