Authors:
Kuranioto, M
Kimura, A
Sasaoka, C
Arakida, T
Nido, M
Mizuta, M
Citation: M. Kuranioto et al., Novel ridge-type InGaN multiple-quantum-well laser diodes fabricated by selective area re-growth on n-GaN substrates, JPN J A P 2, 40(9AB), 2001, pp. L925-L927
Authors:
Yamaguchi, AA
Kuramoto, M
Kimura, A
Nido, M
Mizuta, M
Citation: Aa. Yamaguchi et al., Alloy semiconductor system with tailorable band-tail: A band-state model and its verification using laser characteristics of InGaN material system, JPN J A P 2, 40(6A), 2001, pp. L548-L551
Authors:
Yamaguchi, AA
Kuramoto, M
Nido, M
Mizuta, M
Citation: Aa. Yamaguchi et al., An alloy semiconductor system with a tailorable band-tail and its application to high-performance laser operation: I. A band-states model for an alloy-fluctuated InGaN-material system designed for quantum well laser operation, SEMIC SCI T, 16(9), 2001, pp. 763-769
Authors:
Kuramoto, M
Hisanaga, Y
Kimura, A
Futagawa, N
Yamaguchi, AA
Nido, M
Mizuta, M
Citation: M. Kuramoto et al., An alloy semiconductor system with a tailorable band-tail and its application to high-performance laser operation: II. Experimental study on InGaN MQW laser for optimization of differential gain characteristics tuned by In compositional fluctuation, SEMIC SCI T, 16(9), 2001, pp. 770-775
Authors:
Kuramoto, M
Sasaoka, C
Hisanaga, Y
Kimura, A
Yamaguchi, AA
Sunakawa, H
Kuroda, N
Nido, M
Usui, A
Mizuta, M
Citation: M. Kuramoto et al., Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact, JPN J A P 2, 38(2B), 1999, pp. L184-L186
Authors:
Kuramoto, M
Sasaoka, C
Hisanaga, Y
Kimura, A
Yamaguchi, AA
Sunakawa, H
Kuroda, N
Nido, M
Usui, A
Mizuta, M
Citation: M. Kuramoto et al., Continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact, PHYS ST S-A, 176(1), 1999, pp. 35-38