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Results: 1-7 |
Results: 7
Novel ridge-type InGaN multiple-quantum-well laser diodes fabricated by selective area re-growth on n-GaN substrates
Authors: Kuranioto, M Kimura, A Sasaoka, C Arakida, T Nido, M Mizuta, M
Citation: M. Kuranioto et al., Novel ridge-type InGaN multiple-quantum-well laser diodes fabricated by selective area re-growth on n-GaN substrates, JPN J A P 2, 40(9AB), 2001, pp. L925-L927
Alloy semiconductor system with tailorable band-tail: A band-state model and its verification using laser characteristics of InGaN material system
Authors: Yamaguchi, AA Kuramoto, M Kimura, A Nido, M Mizuta, M
Citation: Aa. Yamaguchi et al., Alloy semiconductor system with tailorable band-tail: A band-state model and its verification using laser characteristics of InGaN material system, JPN J A P 2, 40(6A), 2001, pp. L548-L551
An alloy semiconductor system with a tailorable band-tail and its application to high-performance laser operation: I. A band-states model for an alloy-fluctuated InGaN-material system designed for quantum well laser operation
Authors: Yamaguchi, AA Kuramoto, M Nido, M Mizuta, M
Citation: Aa. Yamaguchi et al., An alloy semiconductor system with a tailorable band-tail and its application to high-performance laser operation: I. A band-states model for an alloy-fluctuated InGaN-material system designed for quantum well laser operation, SEMIC SCI T, 16(9), 2001, pp. 763-769
An alloy semiconductor system with a tailorable band-tail and its application to high-performance laser operation: II. Experimental study on InGaN MQW laser for optimization of differential gain characteristics tuned by In compositional fluctuation
Authors: Kuramoto, M Hisanaga, Y Kimura, A Futagawa, N Yamaguchi, AA Nido, M Mizuta, M
Citation: M. Kuramoto et al., An alloy semiconductor system with a tailorable band-tail and its application to high-performance laser operation: II. Experimental study on InGaN MQW laser for optimization of differential gain characteristics tuned by In compositional fluctuation, SEMIC SCI T, 16(9), 2001, pp. 770-775
Towards a durable InGaN MQW LD - Room temperature CW operation of InGaN MQW laser
Authors: Kuramoto, M Yamaguchi, AA Usui, A Sasaoka, C Hisanaga, Y Kimura, A Sunakawa, H Kuroda, N Nido, M Mizuta, M
Citation: M. Kuramoto et al., Towards a durable InGaN MQW LD - Room temperature CW operation of InGaN MQW laser, NEC RES DEV, 41(1), 2000, pp. 74-86
Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact
Authors: Kuramoto, M Sasaoka, C Hisanaga, Y Kimura, A Yamaguchi, AA Sunakawa, H Kuroda, N Nido, M Usui, A Mizuta, M
Citation: M. Kuramoto et al., Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact, JPN J A P 2, 38(2B), 1999, pp. L184-L186
Continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact
Authors: Kuramoto, M Sasaoka, C Hisanaga, Y Kimura, A Yamaguchi, AA Sunakawa, H Kuroda, N Nido, M Usui, A Mizuta, M
Citation: M. Kuramoto et al., Continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact, PHYS ST S-A, 176(1), 1999, pp. 35-38
Risultati: 1-7 |