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Citation: D. Peschiaroli et al., Advanced salicided 4 Mbit flash memory array with borderless contacts, MICROEL ENG, 55(1-4), 2001, pp. 137-143

Authors: Niel, S Chantre, A Llinares, P Laurens, M Vincent, G

Citation: S. Niel et al., Evaluation of transport properties of ozonized poly/mono interfaces in polysilicon emitter bipolar transistors, SOL ST ELEC, 44(6), 2000, pp. 963-967

Authors: Flament, O Synold, S de Pontcharra, J Niel, S

Citation: O. Flament et al., Radiation tolerance of NPN bipolar technology with 30 GHz Ft, IEEE NUCL S, 47(3), 2000, pp. 654-658

Authors: Vendrame, L Ailloud, L De Pontcharra, J Gravier, T Niel, S Kirtsch, J Chantre, A

Citation: L. Vendrame et al., Investigation on base-emitter reverse biasing: Light emission, junction cross-talk and hot carriers in single-polysilicon quasi self-aligned bipolar-complementary metal-oxide semiconductor bipolar transistors, JPN J A P 1, 38(8), 1999, pp. 4648-4651

Authors: Vincent, G Niel, S Rozeau, O Llinares, P Chantre, A

Citation: G. Vincent et al., Static and dynamic characteristics of a 54 GHz f(max) implanted base 0.35 mu m single-polysilicon bipolar technology, JPN J A P 1, 38(11), 1999, pp. 6258-6263