Authors:
Nakahara, K
Tanabe, T
Takasu, H
Fons, P
Iwata, K
Yamada, A
Matsubara, K
Hunger, R
Niki, S
Citation: K. Nakahara et al., Growth of undoped ZnO films with improved electrical properties by radicalsource molecular beam epitaxy, JPN J A P 1, 40(1), 2001, pp. 250-254
Authors:
Yoshino, K
Mitani, N
Ikari, T
Fons, PJ
Niki, S
Yamada, A
Citation: K. Yoshino et al., Optical properties of high-quality CuGaSe2 epitaxial layers examined by piezoelectric photoacoustic spectroscopy, SOL EN MAT, 67(1-4), 2001, pp. 173-178
Authors:
Kimura, R
Nakada, T
Fons, P
Yamada, A
Niki, S
Matsuzawa, T
Takahashi, K
Kunioka, A
Citation: R. Kimura et al., Photoluminescence properties of sodium incorporation in CuInSe2 and CuIn3Se5 thin films, SOL EN MAT, 67(1-4), 2001, pp. 289-295
Authors:
Fons, P
Iwata, K
Yamada, A
Matsubara, K
Niki, S
Nakahara, K
Tanabe, T
Takasu, H
Citation: P. Fons et al., Nucleation and growth of ZnO on (1(1)over-bar-20) sapphire substrates using molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 911-916
Authors:
Nakahara, K
Takasu, H
Fons, P
Iwata, K
Yamada, A
Matsubara, K
Hunger, R
Niki, S
Citation: K. Nakahara et al., Growth and characterization of undoped ZnO films for single crystal based device use by radical source molecular beam epitaxy (RS-MBE), J CRYST GR, 227, 2001, pp. 923-928
Authors:
Iwata, K
Fons, P
Niki, S
Yamada, A
Matsubara, K
Nakahara, K
Takasu, H
Citation: K. Iwata et al., Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE, PHYS ST S-A, 180(1), 2000, pp. 287-292
Authors:
Fons, P
Iwata, K
Niki, S
Yamada, A
Matsubara, K
Watanabe, M
Citation: P. Fons et al., Uniaxial locked growth of high-quality epitaxial ZnO films on (11(2)over-bar-0)alpha-Al2O3, J CRYST GR, 209(2-3), 2000, pp. 532-536
Authors:
Yoshino, K
Maruoka, D
Ikari, T
Fons, PJ
Niki, S
Yamada, A
Citation: K. Yoshino et al., Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe2 thin films grown by molecular beam epitaxy, APPL PHYS L, 77(2), 2000, pp. 259-261
Authors:
Yoshino, K
Iwamoto, M
Yokoyama, H
Fukuyama, A
Maeda, K
Niki, S
Ikari, T
Citation: K. Yoshino et al., Piezoelectric photoacoustic and photoluminescence properties of CuInXGa1-XSe2 alloys, JPN J A P 1, 38(5B), 1999, pp. 3171-3174
Authors:
Matsubara, K
Niki, S
Watanabe, M
Fons, P
Iwata, K
Yamada, A
Citation: K. Matsubara et al., Growth of LiNbO3 epitaxial films by oxygen radical-assisted laser molecular beam epitaxy, APPL PHYS A, 69, 1999, pp. S679-S681
Authors:
Yoshino, K
Fukuyama, A
Yokoyama, H
Meada, K
Fons, PJ
Yamada, A
Niki, S
Ikari, T
Citation: K. Yoshino et al., Piezoelectric photoacoustic spectra of CuInSe2 thin film grown by molecular beam epitaxy, THIN SOL FI, 344, 1999, pp. 591-593
Authors:
Yoshino, K
Yokoyama, H
Maeda, K
Ikari, T
Fukuyama, A
Fons, PJ
Yamada, A
Niki, S
Citation: K. Yoshino et al., Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy, J APPL PHYS, 86(8), 1999, pp. 4354-4359
Citation: P. Fons et al., Direct observation of the Cu2-xSe phase of Cu-rich epitaxial CuInSe2 grownon GaAs (001), J APPL PHYS, 84(12), 1998, pp. 6926-6928