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Results: 1-25/68
Authors:
Shimizu, A
Nishizawa, J
Oyama, Y
Suto, K
Citation: A. Shimizu et al., Lattice parameter deviation of InP single crystals grown by the horizontalBridgman method under controlled phosphorus vapor pressure, JPN J A P 1, 40(4A), 2001, pp. 2219-2220
Authors:
Kanamoto, K
Yoshida, T
Oizumi, T
Murai, A
Kurabayashi, T
Nishizawa, J
Citation: K. Kanamoto et al., Low-temperature formation of thin-gate SiO2 films by the ultrahigh-vacuum chemical vapor deposition with reduced subcutaneous oxidation using remote-plasma-activated oxygen and Si2H6, JPN J A P 1, 40(10), 2001, pp. 6059-6064
Authors:
Matsuyama, K
Matsumoto, M
Sugita, T
Nishizawa, J
Tokuda, Y
Matsuo, T
Ueda, Y
Citation: K. Matsuyama et al., De Vega annuloplasty and Carpentier-Edwards ring annuloplasty for secondary tricuspid regurgitation, J HEART V D, 10(4), 2001, pp. 520-524
Authors:
Sugita, T
Matsumoto, M
Nishizawa, J
Matsuyama, K
Morimoto, Y
Citation: T. Sugita et al., Aortic laceration due to prolapse of the bicuspid aortic valve: Case report, J HEART V D, 10(3), 2001, pp. 375-376
Authors:
Ohno, J
Horio, Y
Sekido, Y
Hasegawa, Y
Takahashi, M
Nishizawa, J
Saito, H
Ishikawa, F
Shimokata, K
Citation: J. Ohno et al., Telomerase activation and p53 mutations in urethane-induced A/J mouse lungtumor development, CARCINOGENE, 22(5), 2001, pp. 751-756
Authors:
Matsuyama, K
Matsumoto, M
Sugita, T
Nishizawa, J
Yoshioka, T
Tokuda, Y
Ueda, Y
Citation: K. Matsuyama et al., Clinical characteristics of patients with constrictive pericarditis after coronary bypass surgery, JPN CIRC J, 65(6), 2001, pp. 480-482
Authors:
Sugita, T
Ueda, Y
Matsumoto, M
Ogino, H
Nishizawa, J
Matsuyama, K
Citation: T. Sugita et al., Early and late results of partial plication annuloplasty for congenital mitral insufficiency, J THOR SURG, 122(2), 2001, pp. 229-233
Authors:
Nishizawa, J
Murai, A
Oizumi, T
Kurabayashi, T
Kanamoto, K
Yoshida, T
Citation: J. Nishizawa et al., Surface reaction and selective growth investigation of temperature modulation Si molecular-layer epitaxy, J CRYST GR, 233(1-2), 2001, pp. 161-166
Authors:
Shimizu, A
Nishizawa, J
Oyama, Y
Suto, K
Citation: A. Shimizu et al., InP single crystal growth by the horizontal Bridgman method under controlled phosphorus vapor pressure, J CRYST GR, 229(1), 2001, pp. 119-123
Authors:
Kurabayashi, T
Kikuchi, H
Hamano, T
Nishizawa, J
Citation: T. Kurabayashi et al., Doping method for GaAs molecular-layer epitaxy by adsorption control of impurity precursor, J CRYST GR, 229(1), 2001, pp. 147-151
Authors:
Kurabayashi, T
Kono, K
Kikuchi, H
Nishizawa, J
Esashi, M
Citation: T. Kurabayashi et al., Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3, J CRYST GR, 229(1), 2001, pp. 152-157
Authors:
Nishizawa, J
Murai, A
Oizumi, T
Kurabayashi, T
Kanamoto, K
Yoshida, T
Citation: J. Nishizawa et al., Surface morphology investigation of Si thin film grown by temperature modulation Si molecular-layer epitaxy, J CRYST GR, 226(1), 2001, pp. 39-46
Authors:
Nugraha,"Tamura, W
Itoh, O
Amemiya, T
Suto, K
Nishizawa, J
Citation: W. Nugraha,"tamura et al., Growth and crystal properties of Tl-doped PbTe crystals grown by Bridgman method under Pb and Te vapor pressure, J CRYST GR, 222(1-2), 2001, pp. 38-43
Authors:
Saito, T
Suto, K
Nishizawa, J
Kawasaki, M
Citation: T. Saito et al., Spontaneous Raman scattering in [100], [110], and [11-2] directional GaP waveguides, J APPL PHYS, 90(4), 2001, pp. 1831-1835
Authors:
Oyama, Y
Matsumoto, F
Watanabe, H
Suto, K
Nishizawa, J
Citation: Y. Oyama et al., Persistent photoconductivity under atmospheric pressure in uniformly dopedn-GaAs prepared by intermittent injection of (CH3)(3)Ga/AsH3, J ELCHEM SO, 148(10), 2001, pp. G559-G562
Authors:
Nishizawa, J
Nagata, K
Citation: J. Nishizawa et K. Nagata, Induction of heat-shock proteins in ischemic heart and myocardial protection, THERMOTHERAPY FOR NEOPLASIA INFLAMMATION, AND PAIN, 2001, pp. 382-391
Authors:
Maruyama, K
Suto, K
Nishizawa, J
Citation: K. Maruyama et al., Compositional dependence of hardness in ZnSe1-xTex and BeyZn1-ySe1-xTex, JPN J A P 1, 39(9A), 2000, pp. 5180-5183
Authors:
Shimizu, A
Nishizawa, J
Oyama, Y
Suto, K
Citation: A. Shimizu et al., Deep level in InP crystal grown by the horizontal Bridgman method under controlled phosphorus vapor pressure, JPN J A P 1, 39(7A), 2000, pp. 3863-3866
Authors:
Kono, K
Kurabayashi, T
Nishizawa, J
Esashi, M
Citation: K. Kono et al., Nucleation and surface roughness in self-limiting monolayer epitaxy of GaAs, JPN J A P 1, 39(10), 2000, pp. 5737-5739
Authors:
Liu, YX
Oyama, Y
Plotka, P
Suto, K
Nishizawa, J
Citation: Yx. Liu et al., Impact ionisation in GaAs planar-doped barrier structures grown by molecular layer epitaxy, IEE P-CIRC, 147(3), 2000, pp. 165-170
Authors:
Goodhart, S
Nishizawa, J
Yano, K
Yada, H
Citation: S. Goodhart et al., Advanced control in cogeneration utility management, COMP CON EN, 11(6), 2000, pp. 273-282
Authors:
Ohtsuka, K
Murai, A
Oizumi, T
Yoshida, T
Kurabayashi, T
Suto, K
Nishizawa, J
Citation: K. Ohtsuka et al., Low-temperature deposition of Si thin layer by gas-source molecular beam epitaxy, J VAC SCI A, 18(1), 2000, pp. 48-50
Authors:
Nishizawa, J
Citation: J. Nishizawa, Stoichiometry control and point defects in compound semiconductors, MATER CH PH, 64(2), 2000, pp. 93-115
Authors:
Nishizawa, J
Kurabayashi, T
Citation: J. Nishizawa et T. Kurabayashi, Molecular layer epitaxy, THIN SOL FI, 367(1-2), 2000, pp. 13-24
Authors:
Saito, T
Suto, K
Kimura, T
Watanabe, A
Nishizawa, J
Citation: T. Saito et al., Backward and forward Raman scattering in highly efficient GaP Raman amplifier waveguides, J LUMINESC, 87-9, 2000, pp. 883-885