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Results:
1-16
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Results: 16
Authors:
Niu, ZC
Wang, XD
Miao, ZH
Feng, SL
Citation: Zc. Niu et al., Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures, J INF M W, 20(1), 2001, pp. 20-24
Authors:
Wang, XD
Niu, ZC
Feng, SL
Miao, ZH
Citation: Xd. Wang et al., A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy, CHIN PHYS L, 18(4), 2001, pp. 608-610
Authors:
Niu, ZC
Wang, XD
Miao, ZH
Feng, SL
Citation: Zc. Niu et al., Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer, J CRYST GR, 227, 2001, pp. 1062-1068
Authors:
Wang, XD
Niu, ZC
Feng, SL
Miao, ZH
Citation: Xd. Wang et al., Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands, J CRYST GR, 223(3), 2001, pp. 363-368
Authors:
Li, SS
Xia, JB
Liu, JL
Yang, FH
Niu, ZC
Feng, SL
Zheng, HZ
Citation: Ss. Li et al., InAs/GaAs single-electron quantum dot qubit, J APPL PHYS, 90(12), 2001, pp. 6151-6155
Authors:
Wang, XD
Niu, ZC
Feng, SL
Citation: Xd. Wang et al., Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots, JPN J A P 1, 39(9A), 2000, pp. 5076-5079
Authors:
Wang, H
Wang, HL
Wang, XD
Niu, ZC
Feng, SL
Citation: H. Wang et al., The influence of growth interruption on quantum dot laser, J INF M W, 19(5), 2000, pp. 347-350
Authors:
Wang, XD
Wang, H
Wang, HL
Niu, ZC
Feng, SL
Citation: Xd. Wang et al., Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer, J INF M W, 19(3), 2000, pp. 177-180
Study of self-assembled InAs quantum dot structure covered by InxGa1-xAs(0<= x <= 0.3) capping layer
Authors:
Wang, XD
Liu, HY
Niu, ZC
Feng, SL
Citation: Xd. Wang et al., Study of self-assembled InAs quantum dot structure covered by InxGa1-xAs(0<= x <= 0.3) capping layer, ACT PHY C E, 49(11), 2000, pp. 2230-2234
Authors:
Wang, H
Niu, ZC
Zhu, HJ
Wang, ZM
Jiang, DS
Feng, SL
Citation: H. Wang et al., Methods to tune the electronic states of self-organized InAs/GaAs quantum dots, PHYSICA B, 279(1-3), 2000, pp. 217-219
Authors:
Wang, XD
Niu, ZC
Feng, SL
Miao, ZH
Citation: Xd. Wang et al., 1.35 mu m photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)(1)/(GaAs)(1) monolayer deposition, J CRYST GR, 220(1-2), 2000, pp. 16-22
Authors:
Wang, XD
Niu, ZC
Wang, H
Feng, SL
Citation: Xd. Wang et al., Formation of InAs quantum dots on low-temperature GaAs epi-layer, J CRYST GR, 218(2-4), 2000, pp. 209-213
Authors:
Sun, GC
Yao, KL
Liao, HX
Niu, ZC
Liu, ZL
Citation: Gc. Sun et al., Microwave absorption characteristics of chiral materials with Fe3O4-polyaniline composite matrix, INT J ELECT, 87(6), 2000, pp. 735-740
Authors:
Niu, ZC
Notzel, R
Jahn, U
Schonherr, HP
Fricke, J
Ploog, KH
Citation: Zc. Niu et al., Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates, J ELEC MAT, 28(1), 1999, pp. 1-5
Authors:
Notzel, R
Schonherr, HP
Niu, ZC
Daweritz, L
Ploog, KH
Citation: R. Notzel et al., Uniform quantum wire and quantum dot arrays by atomic hydrogen assisted MBE on patterned high-index substrate: role of atomic hydrogen in natural self-faceting, J CRYST GR, 202, 1999, pp. 814-818
Authors:
Fricke, J
Notzel, R
Jahn, U
Niu, ZC
Schonherr, HP
Ramsteiner, M
Ploog, KH
Citation: J. Fricke et al., Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures, J APPL PHYS, 86(5), 1999, pp. 2896-2900
Risultati:
1-16
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