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Results:
1-11
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Results: 11
Authors:
Defives, D
Durand, O
Wyczisk, F
Noblanc, O
Brylinski, C
Meyer, F
Citation: D. Defives et al., Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC, MICROEL ENG, 55(1-4), 2001, pp. 369-374
Authors:
Brisset, C
Noblanc, O
Picard, C
Joffre, F
Brylinski, C
Citation: C. Brisset et al., 4H-SiC MESFETs behavior after high dose irradiation, IEEE NUCL S, 47(3), 2000, pp. 598-603
Authors:
Royet, AS
Ouisse, T
Cabon, B
Noblanc, O
Arnodo, C
Brylinski, C
Citation: As. Royet et al., Self-heating effects in silicon carbide MESFETs, IEEE DEVICE, 47(11), 2000, pp. 2221-2227
Authors:
Noblanc, O
Arnodo, C
Dua, C
Chartier, E
Brylinski, C
Citation: O. Noblanc et al., Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs, MAT SCI E B, 61-2, 1999, pp. 339-344
Authors:
Defives, D
Noblanc, O
Dua, C
Brylinski, C
Barthula, M
Meyer, F
Citation: D. Defives et al., Electrical characterization of inhomogeneous Ti/4H-SiC Schottky contacts, MAT SCI E B, 61-2, 1999, pp. 395-401
Authors:
Broch, JF
Temcamani, F
Pouvil, P
Noblanc, O
Prigent, JP
Citation: Jf. Broch et al., Power amplification with silicon carbide MESFET, MICROW OPT, 23(1), 1999, pp. 16-18
Authors:
Kakanakova-Georgieva, A
Kassamakova, L
Marinova, T
Kakanakov, R
Noblanc, O
Arnodo, C
Cassette, S
Brylinski, C
Citation: A. Kakanakova-georgieva et al., Interface chemistry of WN/4H-SiC structures, APPL SURF S, 151(3-4), 1999, pp. 225-232
Authors:
Kakanakova-Georgieva, A
Marinova, T
Noblanc, O
Arnodo, C
Cassette, S
Brylinski, C
Citation: A. Kakanakova-georgieva et al., Characterization of ohmic and Schottky contacts on SiC, THIN SOL FI, 344, 1999, pp. 637-641
Authors:
Kakanakova-Georgieva, A
Marinova, T
Noblanc, O
Arnodo, C
Cassette, S
Brylinski, C
Citation: A. Kakanakova-georgieva et al., XPS characterization of tungsten-based contact layers on 4H-SiC, THIN SOL FI, 337(1-2), 1999, pp. 180-183
Authors:
Defives, D
Noblanc, O
Dua, C
Brylinski, C
Barthula, M
Aubry-Fortuna, V
Meyer, F
Citation: D. Defives et al., Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers, IEEE DEVICE, 46(3), 1999, pp. 449-455
Authors:
Siriex, D
Noblanc, O
Barataud, D
Chartier, E
Brylinski, C
Quere, R
Citation: D. Siriex et al., A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameters measurements, IEEE DEVICE, 46(3), 1999, pp. 580-584
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