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Results:
1-10
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Results: 10
Authors:
OHTA H
TANIMOTO T
OHBU I
HIGUCHI K
TAKATANI S
KURITA N
KAMOZAKI K
KONDOH H
Citation: H. Ohta et al., HIGH-PERFORMANCE HEMT WITH AN OFFSET-GATE STRUCTURE FOR MILLIMETER-WAVE MONOLITHIC MICROWAVE ICS, JPN J A P 1, 37(3B), 1998, pp. 1373-1376
Authors:
TANIMOTO T
OHBU I
TANAKA S
KAWAI A
KUDO M
TERANO A
NAKAMURA T
Citation: T. Tanimoto et al., SINGLE-VOLTAGE-SUPPLY HIGHLY EFFICIENT E D DUAL-GATE PSEUDOMORPHIC DOUBLE-HETERO HEMTS WITH PLATINUM BURIED GATES/, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1176-1182
Authors:
KUDO M
MATSUMOTO H
TANIMOTO T
MISHIMA T
OHBU I
Citation: M. Kudo et al., IMPROVED HOLE TRANSPORT-PROPERTIES OF HIGHLY STRAINED IN0.35GA0.65AS CHANNEL DOUBLE-MODULATION-DOPED STRUCTURES GROWN BY MBE ON GAAS, Journal of crystal growth, 175, 1997, pp. 910-914
Authors:
ALLAM J
BAYNES ND
CLEAVER JRA
OGAWA K
MISHIMA T
OHBU I
Citation: J. Allam et al., MONOLITHICALLY-INTEGRATED OPTOELECTRONIC CIRCUIT FOR ULTRAFAST SAMPLING OF A DUAL-GATE FIELD-EFFECT TRANSISTOR, Optical and quantum electronics, 28(7), 1996, pp. 875-896
Authors:
OGAWA K
ALLAM J
BAYNES ND
CLEAVER JRA
MISHIMA T
OHBU I
Citation: K. Ogawa et al., ULTRAFAST CHARACTERIZATION OF IN-PLANE-GATE FIELD-EFFECT TRANSISTORS - PARASITICS IN LATERALLY GATED TRANSISTORS, Optical and quantum electronics, 28(7), 1996, pp. 907-917
Authors:
MOZUME T
KASHIMA H
HOSOMI K
OUCHI K
SATO H
MASUDA H
TANOUE T
OHBU I
Citation: T. Mozume et al., OPTIMIZATION OF INTERFACES IN INGAAS INP HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 276-280
Authors:
OGAWA K
ALLAM J
BAYNES NDB
CLEAVER JRA
MISHIMA T
OHBU I
Citation: K. Ogawa et al., ULTRAFAST CHARACTERIZATION OF AN INPLANE GATE TRANSISTOR INTEGRATED WITH PHOTOCONDUCTIVE SWITCHES, Applied physics letters, 66(10), 1995, pp. 1228-1230
Authors:
HO S
MORIYOSHI A
OHBU I
KAGAYA O
MIZUTA H
YAMAGUCHI K
Citation: S. Ho et al., THEORETICAL-ANALYSIS OF TRANSCONDUCTANCE ENHANCEMENT CAUSED BY ELECTRON-CONCENTRATION-DEPENDENT SCREENING IN HEAVILY-DOPED SYSTEMS, IEICE transactions on electronics, E77C(2), 1994, pp. 155-160
Authors:
OHKURA Y
MIZUTA H
OHBU I
KAGAYA O
KATAYAMA K
IHARA S
Citation: Y. Ohkura et al., THE ELECTRON-MOBILITY TRANSITION IN N-GAAS HEAVILY-DOPED CHANNELS, Semiconductor science and technology, 9(5), 1994, pp. 811-814
Authors:
OHBU I
TAKAHAMA M
MIZUTA H
Citation: I. Ohbu et al., TIME-DEPENDENCE OF THE SURFACE FERMI-LEVEL OF GAAS IN ATMOSPHERE, Applied physics letters, 62(25), 1993, pp. 3279-3281
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1-10
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