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Results:
1-12
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Results: 12
Authors:
MATSUZAWA NN
TAKECHI S
OHFUJI T
KUHARA K
MORI S
ENDO M
KAMON K
MORISAWA T
YAMAGUCHI A
SASAGO M
Citation: Nn. Matsuzawa et al., THEORETICAL CALCULATIONS OF SENSITIVITY OF DEPROTECTION REACTIONS FORACRYLIC POLYMERS FOR 193 NM LITHOGRAPHY II - PROTECTION GROUPS CONTAINING AN ADAMANTYL UNIT, JPN J A P 1, 37(10), 1998, pp. 5781-5785
Authors:
MATSUZAWA NN
OHFUJI T
KUHARA K
MORI S
MORISAWA T
ENDO M
SASAGO M
Citation: Nn. Matsuzawa et al., THEORETICAL CALCULATIONS OF SENSITIVITY OF DEPROTECTION REACTIONS FORACRYLIC POLYMERS FOR 193 NM LITHOGRAPHY, Journal of materials chemistry, 8(4), 1998, pp. 853-858
Authors:
OGAWA T
UEMATSU M
ONODERA T
NAKAZAWA K
TAKAHASHI M
OHFUJI T
OHTSUKA H
SASAGO M
Citation: T. Ogawa et al., FABRICATION OF 0.13-MU-M DEVICE PATTERNS BY ARGON FLUORIDE EXCIMER-LASER LITHOGRAPHY WITH PRACTICAL RESOLUTION ENHANCEMENT TECHNIQUES, JPN J A P 1, 36(12B), 1997, pp. 7482-7487
Authors:
NAKAZAWA K
UEMATSU M
ONODERA T
KAMON K
OGAWA T
MORI S
TAKAHASHI M
OHFUJI T
OHTSUKA H
SASAGO M
Citation: K. Nakazawa et al., FABRICATION OF 0.1 MU-M PATTERNS USING AN ALTERNATING PHASE-SHIFT MASK IN ARF EXCIMER-LASER LITHOGRAPHY, JPN J A P 1, 36(12B), 1997, pp. 7488-7493
Authors:
KAMON K
NAKAZAWA K
YAMAGUCHI A
MATSUZAWA N
OHFUJI T
KANZAKI K
TAGAWA S
Citation: K. Kamon et al., T-TOP FORMING SIMULATION USING PERCOLATION THEORY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2610-2615
Authors:
USHIODA J
SEKI Y
MAEDA K
OHFUJI T
TANABE H
Citation: J. Ushioda et al., CHROMIUM FLUORIDE ATTENUATED PHASE-SHIFTING MASK FOR ARGON FLUORIDE EXCIMER-LASER LITHOGRAPHY, JPN J A P 1, 35(12B), 1996, pp. 6356-6359
Authors:
OHFUJI T
OGAWA T
KUHARA K
SASAGO M
Citation: T. Ohfuji et al., PROSPECT AND CHALLENGES OF ARF EXCIMER-LASER LITHOGRAPHY PROCESSES AND MATERIALS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4203-4206
Authors:
NAKANO K
OHFUJI T
MAEDA K
IWASA S
HASEGAWA E
Citation: K. Nakano et al., CHEMICALLY AMPLIFIED RESIST FOR ARF EXCIM ER-LASER LITHOGRAPHY COMPOSED OF AN ALKYLSULFONIUM SALT PHOTOACID GENERATOR AND AN ALICYCLIC TERPOLYMER, Kobunshi ronbunshu, 53(4), 1996, pp. 239-247
Authors:
OHFUJI T
NAKANO K
MAEDA K
HASEGAWA E
Citation: T. Ohfuji et al., REACTION MODELING OF CHEMICALLY AMPLIFIED RESISTS FOR ARF EXCIMER-LASER LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 3022-3025
Authors:
OHFUJI T
NALAMASU O
STONE DR
Citation: T. Ohfuji et al., SIMULATION ANALYSIS OF A CHEMICALLY AMPLIFIED POSITIVE RESIST FOR KRFLITHOGRAPHY, NEC research & development, 35(1), 1994, pp. 7-22
Authors:
ECHIGOYA J
OHFUJI T
SUTO H
Citation: J. Echigoya et al., PREPARATION OF LA2NIO4 FILMS BY DC SPUTTERING ON CUBIC ZRO2, Journal of materials science letters, 13(15), 1994, pp. 1098-1100
Authors:
OHFUJI T
NALAMASU O
STONE DR
Citation: T. Ohfuji et al., ADVANCED DYNAMIC PROCESS SIMULATION FOR AN EXCIMER-LASER LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2714-2719
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1-12
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