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Results: 1-25/139
3-DIMENSIONAL GRAIN-SIZE DISTRIBUTION IN SUS304 STAINLESS-STEEL
Authors: MATSUURA K ITOH Y KUDOH M OHMI T ISHII K
Citation: K. Matsuura et al., 3-DIMENSIONAL GRAIN-SIZE DISTRIBUTION IN SUS304 STAINLESS-STEEL, ISIJ international, 34(2), 1994, pp. 186-190
A BIPOLAR IMAGE DETECTOR WITH SMART FUNCTIONS
Authors: SHINOHARA M SUGAWA S NAKAMURA Y OHMI T
Citation: M. Shinohara et al., A BIPOLAR IMAGE DETECTOR WITH SMART FUNCTIONS, I.E.E.E. transactions on electron devices, 44(10), 1997, pp. 1769-1776
ABRUPT AND ARBITRARY PROFILE FORMATION IN SILICON USING A LOW-KINETIC-ENERGY ION-BOMBARDMENT PROCESS
Authors: SHINDO S HIRAYAMA M OHMI T
Citation: S. Shindo et al., ABRUPT AND ARBITRARY PROFILE FORMATION IN SILICON USING A LOW-KINETIC-ENERGY ION-BOMBARDMENT PROCESS, JPN J A P 1, 34(2B), 1995, pp. 800-803
A COMPACT AND QUICK-RESPONSE DYNAMIC FOCUSING LENS
Authors: KANEKO T OHMI T OHYA N KAWAHARA N
Citation: T. Kaneko et al., A COMPACT AND QUICK-RESPONSE DYNAMIC FOCUSING LENS, Sensors and actuators. A, Physical, 70(1-2), 1998, pp. 92-97
A COMPARATIVE-EXAMINATION OF ION-IMPLANTED N(-DEGREES-C AND 450-DEGREES-C()P JUNCTIONS ANNEALED AT 1000)
Authors: AHARONI H OHMI T SHIBATA T OKA MM NAKADA A TAMAI Y
Citation: H. Aharoni et al., A COMPARATIVE-EXAMINATION OF ION-IMPLANTED N(-DEGREES-C AND 450-DEGREES-C()P JUNCTIONS ANNEALED AT 1000), JPN J A P 1, 35(9A), 1996, pp. 4606-4617
ADSORPTION AND DESORPTION PROPERTIES OF CU AND AG CONTAMINANTS ON SI SUBSTRATE
Authors: MORITA H KIM JS OHMI T
Citation: H. Morita et al., ADSORPTION AND DESORPTION PROPERTIES OF CU AND AG CONTAMINANTS ON SI SUBSTRATE, Applied surface science, 117, 1997, pp. 99-102
ADVANCED DEVELOPMENT PROCESS FOR ULTRA-FINE PHOTORESIST PATTERNS
Authors: SHIMADA H ONODERA M NONAKA T HIROSE K OHMI T
Citation: H. Shimada et al., ADVANCED DEVELOPMENT PROCESS FOR ULTRA-FINE PHOTORESIST PATTERNS, IEEE transactions on semiconductor manufacturing, 6(3), 1993, pp. 269-273
ADVANCED FLUORITE REGENERATION TECHNOLOGY TO RECOVER SPENT FLUORIDE CHEMICALS DRAINED FROM SEMICONDUCTOR MANUFACTURING PROCESS
Authors: MIKI N MAENO M FUKUDOME T OHMI T
Citation: N. Miki et al., ADVANCED FLUORITE REGENERATION TECHNOLOGY TO RECOVER SPENT FLUORIDE CHEMICALS DRAINED FROM SEMICONDUCTOR MANUFACTURING PROCESS, IEICE transactions on electronics, E79C(3), 1996, pp. 363-374
ADVANCED SCIENTIFIC SEMICONDUCTOR PROCESSING BASED ON HIGH-PRECISION CONTROLLED LOW-ENERGY ION-BOMBARDMENT
Authors: OHMI T SHIBATA T
Citation: T. Ohmi et T. Shibata, ADVANCED SCIENTIFIC SEMICONDUCTOR PROCESSING BASED ON HIGH-PRECISION CONTROLLED LOW-ENERGY ION-BOMBARDMENT, Thin solid films, 241(1-2), 1994, pp. 159-166
A MECHANISM TO STABILIZE THE NONUNITARY STATE FOR THE HEAVY-FERMION SUPERCONDUCTOR UPT3
Authors: SUGIYAMA T OHMI T
Citation: T. Sugiyama et T. Ohmi, A MECHANISM TO STABILIZE THE NONUNITARY STATE FOR THE HEAVY-FERMION SUPERCONDUCTOR UPT3, Journal of the Physical Society of Japan, 64(8), 1995, pp. 2746-2749
A MODEL FOR THE ELECTROCHEMICAL DEPOSITION AND REMOVAL OF METALLIC IMPURITIES ON SI SURFACES
Authors: MORINAGA H SUYAMA M NOSE M VERHAVERBEKE S OHMI T
Citation: H. Morinaga et al., A MODEL FOR THE ELECTROCHEMICAL DEPOSITION AND REMOVAL OF METALLIC IMPURITIES ON SI SURFACES, IEICE transactions on electronics, E79C(3), 1996, pp. 343-362
ANALYSIS OF N(+)P SILICON JUNCTIONS WITH VARYING SUBSTRATE DOPING CONCENTRATIONS MADE UNDER ULTRACLEAN PROCESSING TECHNOLOGY
Authors: AHARONI H OHMI T OKA MM NAKADA A TAMAI Y
Citation: H. Aharoni et al., ANALYSIS OF N(+)P SILICON JUNCTIONS WITH VARYING SUBSTRATE DOPING CONCENTRATIONS MADE UNDER ULTRACLEAN PROCESSING TECHNOLOGY, Journal of applied physics, 81(3), 1997, pp. 1270-1288
A NEURON-MOS NEURAL-NETWORK USING SELF-LEARNING-COMPATIBLE SYNAPSE CIRCUITS
Authors: SHIBATA T KOSAKA H ISHII H OHMI T
Citation: T. Shibata et al., A NEURON-MOS NEURAL-NETWORK USING SELF-LEARNING-COMPATIBLE SYNAPSE CIRCUITS, IEEE journal of solid-state circuits, 30(8), 1995, pp. 913-922
AN EXCELLENT WEIGHT-UPDATING-LINEARITY EEPROM SYNAPSE MEMORY CELL FORSELF-LEARNING NEURON-MOS NEURAL NETWORKS
Authors: KOSAKA H SHIBATA T ISHII H OHMI T
Citation: H. Kosaka et al., AN EXCELLENT WEIGHT-UPDATING-LINEARITY EEPROM SYNAPSE MEMORY CELL FORSELF-LEARNING NEURON-MOS NEURAL NETWORKS, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 135-143
A REAL-TIME CENTER-OF-MASS TRACKER CIRCUIT IMPLEMENTED BY NEURON MOS TECHNOLOGY
Authors: YU NM SHIBATA T OHMI T
Citation: Nm. Yu et al., A REAL-TIME CENTER-OF-MASS TRACKER CIRCUIT IMPLEMENTED BY NEURON MOS TECHNOLOGY, IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 45(4), 1998, pp. 495-503
A STUDY OF THE DISSOCIATION STATE AND THE SIO2 ETCHING REACTION FOR HF SOLUTIONS OF EXTREMELY LOW CONCENTRATION
Authors: KIKUYAMA H WAKI M MIYASHITA M YABUNE T MIKI N TAKANO J OHMI T
Citation: H. Kikuyama et al., A STUDY OF THE DISSOCIATION STATE AND THE SIO2 ETCHING REACTION FOR HF SOLUTIONS OF EXTREMELY LOW CONCENTRATION, Journal of the Electrochemical Society, 141(2), 1994, pp. 366-374
BEHAVIOR OF ULTRAFINE METALLIC PARTICLES ON SILICON-WAFER SURFACE
Authors: MORINAGA H FUTATSUKI T OHMI T FUCHITA E ODA M HAYASHI C
Citation: H. Morinaga et al., BEHAVIOR OF ULTRAFINE METALLIC PARTICLES ON SILICON-WAFER SURFACE, Journal of the Electrochemical Society, 142(3), 1995, pp. 966-970
BOSE-EINSTEIN CONDENSATION WITH INTERNAL DEGREES OF FREEDOM IN ALKALIATOM GASES
Authors: OHMI T MACHIDA K
Citation: T. Ohmi et K. Machida, BOSE-EINSTEIN CONDENSATION WITH INTERNAL DEGREES OF FREEDOM IN ALKALIATOM GASES, Journal of the Physical Society of Japan, 67(6), 1998, pp. 1822-1825
CHARACTERIZATION AND CONTROL OF NATIVE-OXIDE ON SILICON
Authors: MORITA M OHMI T
Citation: M. Morita et T. Ohmi, CHARACTERIZATION AND CONTROL OF NATIVE-OXIDE ON SILICON, JPN J A P 1, 33(1B), 1994, pp. 370-374
CHARACTERIZING FILM QUALITY AND ELECTROMIGRATION RESISTANCE OF GIANT-GRAIN COPPER INTERCONNECTS
Authors: NITTA T OHMI T HOSHI T TAKEWAKI T SHIBATA T
Citation: T. Nitta et al., CHARACTERIZING FILM QUALITY AND ELECTROMIGRATION RESISTANCE OF GIANT-GRAIN COPPER INTERCONNECTS, IEICE transactions on electronics, E76C(4), 1993, pp. 626-634
CLOCK-CONTROLLED NEURON-MOS LOGIC GATES
Authors: KOTANI K SHIBATA T IMAI M OHMI T
Citation: K. Kotani et al., CLOCK-CONTROLLED NEURON-MOS LOGIC GATES, IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 45(4), 1998, pp. 518-522
CMOS CHARGE-TRANSFER PREAMPLIFIER FOR OFFSET-FLUCTUATION CANCELLATIONIN LOW-POWER A D CONVERTERS/
Authors: KOTANI K SHIBATA T OHMI T
Citation: K. Kotani et al., CMOS CHARGE-TRANSFER PREAMPLIFIER FOR OFFSET-FLUCTUATION CANCELLATIONIN LOW-POWER A D CONVERTERS/, IEEE journal of solid-state circuits, 33(5), 1998, pp. 762-769
CONDUCTION MECHANISM AND ORIGIN OF STRESS-INDUCED LEAKAGE CURRENT IN THIN SILICON DIOXIDE FILMS
Authors: KIMURA M OHMI T
Citation: M. Kimura et T. Ohmi, CONDUCTION MECHANISM AND ORIGIN OF STRESS-INDUCED LEAKAGE CURRENT IN THIN SILICON DIOXIDE FILMS, Journal of applied physics, 80(11), 1996, pp. 6360-6369
CONTROL OF PRIMARY SILICON CRYSTAL SIZE O F SEMISOLID HYPEREUTECTIC AL-SI ALLOY BY SLURRY-MELT MIXING PROCESS
Authors: OHMI T MINOGUCHI K KUDOH M ITOH Y MATSUURA K
Citation: T. Ohmi et al., CONTROL OF PRIMARY SILICON CRYSTAL SIZE O F SEMISOLID HYPEREUTECTIC AL-SI ALLOY BY SLURRY-MELT MIXING PROCESS, Nippon Kinzoku Gakkaishi, 58(11), 1994, pp. 1311-1317
CR2O3 PASSIVATED GAS TUBING SYSTEM FOR SPECIALTY GASES
Authors: SHIRAI Y NARAZAKI M OHMI T
Citation: Y. Shirai et al., CR2O3 PASSIVATED GAS TUBING SYSTEM FOR SPECIALTY GASES, IEICE transactions on electronics, E79C(3), 1996, pp. 385-391
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