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Results: 1-10 |
Results: 10
A NEW BROAD-BAND BUFFER CIRCUIT TECHNIQUE AND ITS APPLICATION TO A 10-GBIT S DECISION CIRCUIT USING PRODUCTION-LEVEL 0.5 MU-M GAAS-MESFETS/
Authors: MIYASHITA M ANDOH N YAMAMOTO K NAKAGAWA J OMURA E AIGA M NAKAYAMA Y
Citation: M. Miyashita et al., A NEW BROAD-BAND BUFFER CIRCUIT TECHNIQUE AND ITS APPLICATION TO A 10-GBIT S DECISION CIRCUIT USING PRODUCTION-LEVEL 0.5 MU-M GAAS-MESFETS/, IEICE transactions on electronics, E81C(10), 1998, pp. 1627-1638
NARROW-BEAM AND POWER-PENALTY-FREE 1.3-MU-M LASER-DIODES WITH MONOLITHICALLY INTEGRATED WAVE-GUIDE LENS FORMED BY SELECTIVE-AREA EPITAXIAL-GROWTH
Authors: TAKEMOTO A MIYAZAKI Y SHIBATA K MATSUMOTO K HISA Y GOTO K ITAGAKI T TAKIGUCHI T OMURA E OHTSUBO M
Citation: A. Takemoto et al., NARROW-BEAM AND POWER-PENALTY-FREE 1.3-MU-M LASER-DIODES WITH MONOLITHICALLY INTEGRATED WAVE-GUIDE LENS FORMED BY SELECTIVE-AREA EPITAXIAL-GROWTH, IEEE photonics technology letters, 8(3), 1996, pp. 325-327
1.3-MU-M STRAINED MQW-DFB LASERS WITH EXTREMELY LOW INTERMODULATION DISTORTION FOR HIGH-SPEED ANALOG TRANSMISSION
Authors: WATANABE H AOYAGI T TAKEMOTO A TAKIGUCHI T OMURA E
Citation: H. Watanabe et al., 1.3-MU-M STRAINED MQW-DFB LASERS WITH EXTREMELY LOW INTERMODULATION DISTORTION FOR HIGH-SPEED ANALOG TRANSMISSION, IEEE journal of quantum electronics, 32(6), 1996, pp. 1015-1023
PALPABLE PURPURA IN AN HIV-POSITIVE PATIENT - DISSEMINATED HISTOPLASMOSIS
Authors: PHILLIPS CM FABRE V OMURA E
Citation: Cm. Phillips et al., PALPABLE PURPURA IN AN HIV-POSITIVE PATIENT - DISSEMINATED HISTOPLASMOSIS, Archives of dermatology, 132(3), 1996, pp. 341
0.78- AND 0.98-MU-M RIDGE-WAVE-GUIDE LASERS BURIED WITH ALGAAS CONFINEMENT LAYER SELECTIVELY GROWN BY CHLORIDE-ASSISTED MOCVD
Authors: SHIMA A KIZUKI H TAKEMOTO A KARAKIDA S MIYASHITA M NAGAI Y KAMIZATO T SHIGIHARA K ADACHI A OMURA E OTSUBO M
Citation: A. Shima et al., 0.78- AND 0.98-MU-M RIDGE-WAVE-GUIDE LASERS BURIED WITH ALGAAS CONFINEMENT LAYER SELECTIVELY GROWN BY CHLORIDE-ASSISTED MOCVD, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 102-109
UNIFORM AND HIGH-POWER CHARACTERISTICS OF ALGAINP VISIBLE LASER-DIODES AND THEIR 4-ELEMENT ARRAYS FABRICATED ON A 3-INCH PHI-WAFER
Authors: SHIMA A KATO M NAGAI Y MOTODA T NISHIMURA T OMURA E OTSUBO M
Citation: A. Shima et al., UNIFORM AND HIGH-POWER CHARACTERISTICS OF ALGAINP VISIBLE LASER-DIODES AND THEIR 4-ELEMENT ARRAYS FABRICATED ON A 3-INCH PHI-WAFER, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 734-740
LONG-WAVELENGTH RECEIVER OPTOELECTRONIC INTEGRATED-CIRCUIT ON 3-INCH-DIAMETER GAAS SUBSTRATE GROWN BY INP-ON-GAAS HETEROEPITAXY
Authors: MIHASHI Y GOTO K ISHIMURA E MIYASHITA M SHIMURA T NISHIGUCHI H KIMURA T SHIBA T OMURA E
Citation: Y. Mihashi et al., LONG-WAVELENGTH RECEIVER OPTOELECTRONIC INTEGRATED-CIRCUIT ON 3-INCH-DIAMETER GAAS SUBSTRATE GROWN BY INP-ON-GAAS HETEROEPITAXY, JPN J A P 1, 33(5A), 1994, pp. 2599-2604
ZN-DIFFUSION-INDUCED DISORDERING OF INGAAS ALGAINAS MULTIPLE-QUANTUM-WELL AND ITS APPLICATION TO LONG-WAVELENGTH LASER/
Authors: GOTO K UESUGI F TAKAHASHI S TAKIGUCHI T OMURA E MIHASHI Y
Citation: K. Goto et al., ZN-DIFFUSION-INDUCED DISORDERING OF INGAAS ALGAINAS MULTIPLE-QUANTUM-WELL AND ITS APPLICATION TO LONG-WAVELENGTH LASER/, JPN J A P 1, 33(10), 1994, pp. 5774-5778
10000H, 30-50 MWW CW OPERATION OF 670-690 NM VISIBLE LASER-DIODES
Authors: SHIMA A WATANABE H TADA H ARIMOTO S KAMIZATO T KADOIWA K OMURA E OTSUBO M
Citation: A. Shima et al., 10000H, 30-50 MWW CW OPERATION OF 670-690 NM VISIBLE LASER-DIODES, Electronics Letters, 30(16), 1994, pp. 1293-1294
150 MW FUNDAMENTAL-TRANSVERSE-MODE OPERATION OF 670 NM WINDOW LASER-DIODE
Authors: ARIMOTO S YASUDA M SHIMA A KADOIWA K KAMIZATO T WATANABE H OMURA E AIGA M IKEDA K MITSUI S
Citation: S. Arimoto et al., 150 MW FUNDAMENTAL-TRANSVERSE-MODE OPERATION OF 670 NM WINDOW LASER-DIODE, IEEE journal of quantum electronics, 29(6), 1993, pp. 1874-1879
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