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Results:
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Results: 20
Authors:
VANBAVEL AM
LANGOUCHE G
OVERHOF H
Citation: Am. Vanbavel et al., THE ATOMIC-STRUCTURE OF CO DIMERS IN SILICON, Semiconductor science and technology, 13(1), 1998, pp. 108-115
Authors:
OVERHOF H
OTTE M
SCHMIDTKE M
BACKHAUSEN U
CARIUS R
Citation: H. Overhof et al., THE TRANSPORT MECHANISM IN MICROCRYSTALLINE SILICON, Journal of non-crystalline solids, 230, 1998, pp. 992-995
Authors:
OVERHOF H
Citation: H. Overhof, FUNDAMENTAL-CONCEPTS IN THE PHYSICS OF AMORPHOUS-SEMICONDUCTORS, Journal of non-crystalline solids, 230, 1998, pp. 15-22
Authors:
OVERHOF H
BEYER W
THOMAS P
Citation: H. Overhof et al., THERMOPOWER AND CONDUCTIVITY ACTIVATION-ENERGIES IN HYDROGENATED AMORPHOUS-SILICON - COMMENT, Physical review. B, Condensed matter, 56(19), 1997, pp. 12649-12650
Authors:
WIMBAUER T
MEYER BK
HOFSTATTER A
SCHARMANN A
OVERHOF H
Citation: T. Wimbauer et al., NEGATIVELY CHARGED SI VACANCY IN 4H SIC - A COMPARISON BETWEEN THEORYAND EXPERIMENT, Physical review. B, Condensed matter, 56(12), 1997, pp. 7384-7388
Authors:
OVERHOF H
WEIHRICH H
Citation: H. Overhof et H. Weihrich, AB-INITIO TOTAL-ENERGY CALCULATIONS FOR IRON-ACCEPTOR PAIRS IN SILICON, Physical review. B, Condensed matter, 55(16), 1997, pp. 10508-10514
Authors:
ILLGNER M
OVERHOF H
Citation: M. Illgner et H. Overhof, ELECTRONIC-STRUCTURE AND HYPERFINE INTERACTIONS OF 3D TRANSITION ELEMENT SONS IN CDTE, Semiconductor science and technology, 11(7), 1996, pp. 977-982
Authors:
WEIHRICH H
OVERHOF H
Citation: H. Weihrich et H. Overhof, GROUND-STATE PROPERTIES OF ISOLATED INTERSTITIAL IRON IN SILICON - ELECTRONIC-STRUCTURE AND HYPERFINE INTERACTIONS, Physical review. B, Condensed matter, 54(7), 1996, pp. 4680-4695
Authors:
ILLGNER M
OVERHOF H
Citation: M. Illgner et H. Overhof, ELECTRONIC-STRUCTURE AND HYPERFINE INTERACTIONS FOR DEEP DONORS AND VACANCIES IN II-VI COMPOUND SEMICONDUCTORS, Physical review. B, Condensed matter, 54(4), 1996, pp. 2505-2511
Authors:
OVERHOF H
THOMAS P
Citation: H. Overhof et P. Thomas, HOPPING TRANSPORT IN A MAGNETIC-FIELD - KADANOFF-BAYM-KELDYSH APPROACH AND MAGNETOCONDUCTIVITY - COMMENT ON, Physical review. B, Condensed matter, 53(19), 1996, pp. 13187-13189
Authors:
MARZ M
REINKE J
GREULICHWEBER S
SPAETH JM
OVERHOF H
MOKHOV EN
ROENKOV AD
KALABUKHOVA EN
Citation: M. Marz et al., ELECTRON-PARAMAGNETIC-RESONANCE OF THE SCANDIUM ACCEPTOR IN 6H SILICON-CARBIDE, Solid state communications, 98(5), 1996, pp. 439-443
Authors:
BRACHT H
OVERHOF H
Citation: H. Bracht et H. Overhof, KINETICS OF INTERSTITIAL-SUBSTITUTIONAL EXCHANGE OF ZN, PT, AND AU INSI - EXPERIMENTAL RESULTS AND THEORETICAL CALCULATIONS, Physica status solidi. a, Applied research, 158(1), 1996, pp. 47-55
Authors:
PAWLIK T
SPAETH JM
OTTE M
OVERHOF H
Citation: T. Pawlik et al., ENDOR-INVESTIGATIONS OF RARE-EARTH AND TRANSITION-METAL IONS IN THE CUBIC ELPASOLITE CRYSTAL CS2NAYF6, Radiation effects and defects in solids, 135(1-4), 1995, pp. 547-552
Authors:
GREULICHWEBER S
ALTEHELD P
REINKE J
WEIHRICH H
OVERHOF H
SPAETH JM
Citation: S. Greulichweber et al., EPR AND ENDOR OBSERVATION OF ORTHORHOMBIC AU-LI AND PT-LI PAIRS IN SILICON - ON THE PROBLEM OF THE OBSERVATION OF ISOLATED AU-SI(0) WITH MAGNETIC-RESONANCE, Semiconductor science and technology, 10(7), 1995, pp. 977-982
AGGREGATE DEFECTS OF GOLD AND PLATINUM WITH LITHIUM IN SILICON .1. MAGNETIC-RESONANCE INVESTIGATIONS
Authors:
ALTEHELD P
GREULICHWEBER S
SPAETH JM
WEIHRICH H
OVERHOF H
HOHNE M
Citation: P. Alteheld et al., AGGREGATE DEFECTS OF GOLD AND PLATINUM WITH LITHIUM IN SILICON .1. MAGNETIC-RESONANCE INVESTIGATIONS, Physical review. B, Condensed matter, 52(7), 1995, pp. 4998-5006
AGGREGATE DEFECTS OF GOLD AND PLATINUM WITH LITHIUM IN SILICON .2. ELECTRONIC-STRUCTURE CALCULATIONS
Authors:
WEIHRICH H
OVERHOF H
ALTEHELD P
GREULICHWEBER S
SPAETH JM
Citation: H. Weihrich et al., AGGREGATE DEFECTS OF GOLD AND PLATINUM WITH LITHIUM IN SILICON .2. ELECTRONIC-STRUCTURE CALCULATIONS, Physical review. B, Condensed matter, 52(7), 1995, pp. 5007-5020
Authors:
KUBLER J
KUMM AE
OVERHOF H
SCHWALBACH P
HARTICK M
KANKELEIT E
KECK B
WENDE L
SIELEMANN R
Citation: J. Kubler et al., ISOMER-SHIFT OF INTERSTITIAL AND SUBSTITUTIONAL IRON IN SILICON AND GERMANIUM, Zeitschrift fur Physik. B, Condensed matter, 92(2), 1993, pp. 155-162
Authors:
STICH B
GRUELICHWEBER S
SPAETH JM
OVERHOF H
Citation: B. Stich et al., ELECTRICALLY DETECTED ELECTRON-PARAMAGNETIC-RESONANCE OF A DEEP RECOMBINATION CENTER IN A SILICON DIODE, Semiconductor science and technology, 8(7), 1993, pp. 1385-1392
Authors:
LUCOVSKY G
OVERHOF H
Citation: G. Lucovsky et H. Overhof, AN APPLICATION OF THE STATISTICAL SHIFT MODEL TO THE INVERTED MEYER-NELDEL, M-N, RELATIONSHIP IN HEAVILY-DOPED MICROCRYSTALLINE SI, MU-C-SI, Journal of non-crystalline solids, 166, 1993, pp. 973-976
Authors:
FOCKELE M
SPAETH JM
OVERHOF H
GIBART P
Citation: M. Fockele et al., ODMR INVESTIGATIONS OF DX CENTERS IN SN-DOPED AND SI-DOPED ALXGA1-XAS, Semiconductor science and technology, 6(10B), 1991, pp. 88-91
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