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Results: 1-12 |
Results: 12
Impact of post via-etch cleans on mechanical reliability of W-plug vias
Authors: Obeng, YS Kang, SH Huang, JS Oates, AS Lin, X Obeng, JS
Citation: Ys. Obeng et al., Impact of post via-etch cleans on mechanical reliability of W-plug vias, THIN SOL FI, 391(1), 2001, pp. 149-156
Experimental evaluation of device degradation subject to oxide soft breakdown
Authors: Zhang, J Yuan, JS Ma, Y Chen, Y Oates, AS
Citation: J. Zhang et al., Experimental evaluation of device degradation subject to oxide soft breakdown, SOL ST ELEC, 45(9), 2001, pp. 1521-1524
Modeling of direct tunneling and surface roughness effects on C-V characteristics of ultra-thin gate MOS capacitors
Authors: Zhang, JL Yuan, JS Ma, Y Oates, AS
Citation: Jl. Zhang et al., Modeling of direct tunneling and surface roughness effects on C-V characteristics of ultra-thin gate MOS capacitors, SOL ST ELEC, 45(2), 2001, pp. 373-377
Electromigration subjected to Joule heating under pulsed DC stress
Authors: Wu, W Yuan, JS Kang, SH Oates, AS
Citation: W. Wu et al., Electromigration subjected to Joule heating under pulsed DC stress, SOL ST ELEC, 45(12), 2001, pp. 2051-2056
Thermal effect on electromigration performance for Al/SiO2, Cu/SiO2 and Cu/low-K interconnect systems
Authors: Wu, W Kang, SH Yuan, JS Oates, AS
Citation: W. Wu et al., Thermal effect on electromigration performance for Al/SiO2, Cu/SiO2 and Cu/low-K interconnect systems, SOL ST ELEC, 45(1), 2001, pp. 59-62
A comparison of early stage hot carrier degradation behaviour in 5 and 3 Vsub-micron low doped drain metal oxide semiconductor field effect transistors
Authors: De Souza, MM Wang, J Manhas, S Narayanan, EMS Oates, AS
Citation: Mm. De Souza et al., A comparison of early stage hot carrier degradation behaviour in 5 and 3 Vsub-micron low doped drain metal oxide semiconductor field effect transistors, MICROEL REL, 41(2), 2001, pp. 169-177
RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology
Authors: Li, Q Zhang, JL Li, W Yuan, JS Chen, Y Oates, AS
Citation: Q. Li et al., RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology, IEEE MICR T, 49(9), 2001, pp. 1546-1551
Effect of cracks in TiN anti-reflection coating layers on early via electromigration failure
Authors: Huang, JS Oates, AS Zhao, J
Citation: Js. Huang et al., Effect of cracks in TiN anti-reflection coating layers on early via electromigration failure, THIN SOL FI, 365(1), 2000, pp. 110-115
Design optimization of stacked layer dielectrics for minimum gate leakage currents
Authors: Zhang, J Yuan, JS Ma, Y Oates, AS
Citation: J. Zhang et al., Design optimization of stacked layer dielectrics for minimum gate leakage currents, SOL ST ELEC, 44(12), 2000, pp. 2165-2170
An improved substrate current model for deep submicron MOSFETs
Authors: Li, W Yuan, JS Chetlur, S Zhou, J Oates, AS
Citation: W. Li et al., An improved substrate current model for deep submicron MOSFETs, SOL ST ELEC, 44(11), 2000, pp. 1985-1988
Asymmetrical critical current density and its influence on electromigration of two-level W-plug interconnection
Authors: Huang, JS Oates, AS Obeng, YS Brown, WL
Citation: Js. Huang et al., Asymmetrical critical current density and its influence on electromigration of two-level W-plug interconnection, J ELCHEM SO, 147(10), 2000, pp. 3840-3844
Metallurgical techniques for more reliable integrated circuits
Authors: Kang, SH Morris, JW Oates, AS
Citation: Sh. Kang et al., Metallurgical techniques for more reliable integrated circuits, JOM-J MIN, 51(3), 1999, pp. 16-18
Risultati: 1-12 |